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    DUAL DIODE TO3 Search Results

    DUAL DIODE TO3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DUAL DIODE TO3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FFA60UA60DN UItrafast ll Dual Diode Features Description • Ultrafast Recovery, Trr = 90ns @ IF = 30 A The FFA60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of


    Original     		PDF FFA60UA60DN FFA60UA60DN

    NTE6090

    Abstract: TO218 package
    Text: NTE6090 Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range


    Original     		PDF NTE6090 NTE6090 O3P/TO218 TO218 package

    Untitled

    Abstract: No abstract text available
    Text: FFAF60UA60DN 60 A, 600 V, UItrafast II Dual Diode Features Description • Ultrafast Recovery, Trr < 90ns @ IF = 30 A The FFAF60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of


    Original     		PDF FFAF60UA60DN FFAF60UA60DN

    NTE6090

    Abstract: TO218 package TO3P package
    Text: NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp, TO218/TO3P Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range


    Original     		PDF NTE6090 O218/TO3P NTE6090 O3P/TO218 TO218 package TO3P package

    Untitled

    Abstract: No abstract text available
    Text: HER3003PT thru HER3006PT Pb HER3003PT thru HER3006PT Pb Free Plating Product 30.0 Ampere Dual Common Cathode High Efficiency Rectifier Diode TO-3P/TO-247AD Unit: inch mm Features .640(16.25) .620(15.75) Dual rectifier construction, positive center-tap


    Original     		PDF HER3003PT HER3006PT O-3P/TO-247AD ER3005PT HER3003PT 300uS 50mVp-p

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MGBR30L60C DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L60C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.


    Original     		PDF MGBR30L60C MGBR30L60C MGBR30L60CL-TA3-T MGBR30L60CG-TA3-T MGBR30L60CL-TF3-T MGBR30L60CG-TF3-T MGBR30L60CL-T3P-T MGBR30L60CG-T3P-T O-220 O-220F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MGBR30L60C DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L60C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.


    Original     		PDF MGBR30L60C MGBR30L60C MGBR30L60CL-TA3-T MGBR30L60CG-TA3-T MGBR30L60CL-T3P-T MGBR30L60CG-T3P-T O-220 O-220/TO-3P QW-R601-109

    Untitled

    Abstract: No abstract text available
    Text: FFA60UP30DN 60 A, 300 V, Ultrafast Dual Diode Features • Ultrafast Recovery, Trr = 55 ns @IF = 30 A Description • Max. Forward Voltage, VF = 1.5 V (@ TC = 25°C) • Reverse Voltage: VRRM = 300 V The FFA60UP30DN is an ultrafast diode with low forward


    Original     		PDF FFA60UP30DN FFA60UP30DN TT3P0-003.

    F60UP30DN

    Abstract: No abstract text available
    Text: FFA60UP30DN 60 A, 300 V, Ultrafast Dual Diode Description Features • Ultrafast Recovery, Trr = 55 ns @IF = 30 A The FFA60UP30DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a


    Original     		PDF FFA60UP30DN FFA60UP30DN TT3P0-003. F60UP30DN

    FFA60UP30DN

    Abstract: No abstract text available
    Text: FFA60UP30DN tm Features 60 A, 300 V Ultrafast Dual Diode • Ultrafast Recovery, Trr = 55 ns @IF = 30 A • Max. Forward Voltage, VF = 1.5 V (@ TC = 25°C) The FFA60UP30DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is


    Original     		PDF FFA60UP30DN FFA60UP30DN

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU36B1WDPK-M0 Dual Diode Ultra Fast Recovery Diode R07DS0667EJ0100 Rev.1.00 Mar 01, 2012 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/s  Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)


    Original     		PDF RJU36B1WDPK-M0 R07DS0667EJ0100 PRSS0004ZH-A

    RJU36

    Abstract: RJU36B1WDPK-M0
    Text: Preliminary Datasheet RJU36B1WDPK-M0 Dual Diode Ultra Fast Recovery Diode R07DS0667EJ0100 Rev.1.00 Mar 01, 2012 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/s  Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)


    Original     		PDF RJU36B1WDPK-M0 R07DS0667EJ0100 PRSS0004ZH-A RJU36 RJU36B1WDPK-M0

    RJU36

    Abstract: RJU36B2WDPK-M0
    Text: Preliminary Datasheet RJU36B2WDPK-M0 Dual Diode Ultra Fast Recovery Diode R07DS0668EJ0100 Rev.1.00 Mar 01, 2012 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 20 A, di/dt = 100 A/s  Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)


    Original     		PDF RJU36B2WDPK-M0 R07DS0668EJ0100 PRSS0004ZH-A RJU36 RJU36B2WDPK-M0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU36B2WDPK-M0 Dual Diode Ultra Fast Recovery Diode R07DS0668EJ0100 Rev.1.00 Mar 01, 2012 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 20 A, di/dt = 100 A/s  Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)


    Original     		PDF RJU36B2WDPK-M0 R07DS0668EJ0100 PRSS0004ZH-A

    FFA60UP20DN

    Abstract: No abstract text available
    Text: FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features Description • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other


    Original     		PDF FFA60UP20DN FFA60UP20DN

    Untitled

    Abstract: No abstract text available
    Text: FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features Description • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other


    Original     		PDF FFA60UP20DN FFA60UP20DN

    050TYP

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU6054WDPK-M0 600V - 30A - Dual Diode Ultra Fast Recovery Diode R07DS1009EJ0100 Rev.1.00 Feb 06, 2013 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 30 A, di/dt = 100 A/s  Low forward voltage: VF = 2.5 V typ. (at IF = 30 A)


    Original     		PDF RJU6054WDPK-M0 R07DS1009EJ0100 PRSS0004ZH-A 050TYP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg  Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg


    Original     		PDF RJU60C6WDPK-M0 R07DS0875EJ0100 PRSS0004ZH-A

    rju60c6

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg  Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg


    Original     		PDF RJU60C6WDPK-M0 R07DS0875EJ0100 PRSS0004ZH-A rju60c6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1635A SBT700-06RH Schottky Barrier Diode http://onsemi.com 60V, 70A, VF; 0.66V Dual To-3PF-3L Cathode Common Applications • High frequency rectification switching regulators, converters, choppers Features • • • Guaranteed up to Tj=150°C


    Original     		PDF ENA1635A SBT700-06RH A1635-5/5

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1635A SBT700-06RH Schottky Barrier Diode http://onsemi.com 60V, 70A, VF; 0.66V Dual To-3PF-3L Cathode Common Applications • High frequency rectification switching regulators, converters, choppers Features • • • Guaranteed up to Tj=150°C


    Original     		PDF ENA1635A SBT700-06RH A1635-5/5

    Untitled

    Abstract: No abstract text available
    Text: DUAL POWER SCHOTTKY RECTIFIERS i | £ HR2 30 Amp Pk per diode, 45V FEATURES • Very Low Forward Voltage • Low Recovered Charge • Rugged Packaged Design TO-3 • High Efficiency for Low Voltage Supplies • Dual Schottky Rectifiers in a Single Package


    OCR Scan     		PDF SD241

    Untitled

    Abstract: No abstract text available
    Text: DUAL POWER SCHOTTKY RECTIFIERS ¡gg*J 30 Amp Pk per diode, 45V FEATURES • Very Low Forward Voltage • Low Recovered Charge • Rugged Packaged Design TO-3 • High Efficiency for Low Voltage Supplies • Dual Schottky Rectifiers in a Single Package D ESC R IPT IO N


    OCR Scan     		PDF SD241HR. MIL-STD-750 MIL-S-19500/553

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE C30P03Q C30P04Q 33A/30~40V 5.31.209 4.71.185) FEATURES • Similar to TO-247AC TO-3P) Case .626) 0 Dual Diodes - Cathode Common 3.6C.142), — 5.71.224) 5.312081 3.4U34) 20.31.800) 4.3(.169) 3.71.145) o Low Forward Voltage Drop I57(775î


    OCR Scan     		PDF C30P03Q C30P04Q 3A/30 O-247AC C30P03Q bbl51E3