DBES105A
Abstract: SAS diode
Text: DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for
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DBES105a
DBES105a
DSDBES1051067
-08-Mar-01
SAS diode
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marking Um diode
Abstract: W-band diode diode marking um mixer diode w-band dual diode mixer 14-077D diode d.a.t.a. book marking code um
Text: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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14-077D
Q62702-D1354
EHT09236
EHT09237
marking Um diode
W-band diode
diode marking um
mixer diode
w-band
dual diode mixer
14-077D
diode d.a.t.a. book
marking code um
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5082-2277
Abstract: No abstract text available
Text: 5082-2277 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2277 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications from 2.4 to 4.8 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier
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5082-2830
Abstract: DIODE 809
Text: 5082-2830 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2830 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 2.0 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier
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dual diode mixer
Abstract: Q62702-D1354
Text: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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14-077D
EHT09236
Q62702-D1354
14-077D
EHT09237
dual diode mixer
Q62702-D1354
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Untitled
Abstract: No abstract text available
Text: BAT 14-077D Silicon Dual Flip Chip Schottky Diode Preliminary data Dual Schottky medium Barrier Mixer Diode For W-band application up to 80GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-077D - Pin Configuration
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14-077D
80GHz
Oct-05-1999
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DMF-3070
Abstract: No abstract text available
Text: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching
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DMF-3070
DMF-3070
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Untitled
Abstract: No abstract text available
Text: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 867 FEATURES INCLUDE: • Low Barrier • Excellent Matching
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DMF-3070
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DUAL DIODE
Abstract: No abstract text available
Text: 5082-2279 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2279 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 12 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching
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Untitled
Abstract: No abstract text available
Text: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.
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DBES105a
DBES105a
DSDBES105a6354
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DBES103
Abstract: DBES110 DIODE 33 25 dual diode anode-cathode SAS diode
Text: DBES103/110 Flip-Chip Dual Diode GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.
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DBES103/110
DBES103/110
DSDBES1038211
DBES103
DBES110
DIODE 33 25
dual diode anode-cathode
SAS diode
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Untitled
Abstract: No abstract text available
Text: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating
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DBES105a
DBES105a
DSDBES105a6354
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DBES105A
Abstract: DIODE BP dual diode mixer DBES105a99F
Text: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating
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DBES105a
DBES105a
DSDBES105a6354
DIODE BP
dual diode mixer
DBES105a99F
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SCHOTTKY DIODE SOT-143
Abstract: DIODE MARKING s7 A1017
Text: Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099 S7
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Q62702-A1017
OT-143
SCHOTTKY DIODE SOT-143
DIODE MARKING s7
A1017
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3240C 1SS351 Schottky Barrier Diode http://onsemi.com Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP Features • • • Series connection of 2 elements in a small-sized package facilitates high-density mounting and
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EN3240C
1SS351
1SS351-applied
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BC237
Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
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1SS383T1
2N3819
2N3903,
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088,
2N5089
BC237
BC847BPDW1T1 Series
BC548
low noise transistors bc638
cbc550c
BC307
2N5550* surface mount
BC212
BSR58LT1
NSDEMN11XV6T1
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MMBD352WT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD352WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.
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MMBD352WT1/D
MMBD352WT1
MMBD352WT1
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diode cross reference
Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference
Text: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection Guide SOT-23 Single Application VBR Attenuator 50 Ω 100 V HSMP-3800 D0 Attenuator 75 Ω 100 V HSMP-3810 E0 Dual Anode Dual Cathode Series Pair SOT-143 Common Common Unconnected
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OT-23
HSMP-3800
HSMP-3810
OT-143
HSMP-3802
HSMP-3804
HSMP-4810
HSMP-3812
HSMP-3813
HSMP-3814
diode cross reference
diode hp 2800
motorola diode cross reference
schottky diode cross reference
led cross reference
HP 2804
SCHOTTKY DIODES CROSS REFERENCE
hp 2800 diode
HSMS-3800
pin diode cross reference
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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MMBD352WT1
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DEVICE MARKING CODE AAs
Abstract: pin configuration of s r flip flip
Text: Infineon t a c h n c !o g i e * Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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14-077D
Q62702-D1354
EHT09237
DEVICE MARKING CODE AAs
pin configuration of s r flip flip
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diode marking KJ
Abstract: KJ DIODE MARKING
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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Q62702-A1017
OT-143
EHA07011
diode marking KJ
KJ DIODE MARKING
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6-BT
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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Q62702-A1017
OT-143
flS35bOS
6-BT
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ECG584 schottky
Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Text: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114
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ECG109
ECG110A
ECG110MP
ECG112
ECG113A
ECG114
ECG115
ECG592
ECG593
ECG694
ECG584 schottky
diode ECG109
diode ecg 588
vat 2000 ge
ECG575
Z3 DIODE
ECG577
Z4 diode
Diode ECG110A
ECG113
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Untitled
Abstract: No abstract text available
Text: u n ite d „ _ s e m ic o m f u c S o r s ^ C ~ « <5 D B E S10 3 /1 10 . F lip -C h ip Dual D io d e GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1nm stepper process including a bump technology. The parasitic inductances are reduced and result in
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DBES103/110
DSDBES1038211
SDBES1038211
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