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    DTMOS Search Results

    DTMOS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TK110E65Z Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
    TK155E65Z Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
    TK190E65Z Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
    TK090E65Z Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.09 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
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    DTMOS Price and Stock

    Toshiba America Electronic Components SSM6K513NU,LF

    MOSFETs UDFN6B N CHAN 30V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SSM6K513NU,LF Reel 15,000 3,000
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    • 10000 $0.13
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    Toshiba America Electronic Components TPN1600ANH,L1Q

    MOSFETs TSON 100V 36A N-CH DTMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TPN1600ANH,L1Q Reel 10,000 5,000
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    • 10000 $0.321
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    Toshiba America Electronic Components TK31V60X,LQ

    MOSFETs DFN 600V 30.8A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TK31V60X,LQ Reel 5,000 2,500
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    Toshiba America Electronic Components TK16A60W,S4VX

    MOSFETs TO220 600V 15.8A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TK16A60W,S4VX Tube 50
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    • 100 $1.63
    • 1000 $1.54
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    Toshiba America Electronic Components TK100E10N1,S1X

    MOSFETs TO220 100V 207A N-CH MOSFET
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    TTI TK100E10N1,S1X Tube 50
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    • 100 $2.04
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    DTMOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TK39N60W

    Abstract: No abstract text available
    Text: TK39N60W MOSFETs Silicon N-Channel MOS DTMOSTK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK39N60W O-247 TK39N60W PDF

    tk8a60

    Abstract: No abstract text available
    Text: TK8A60W MOSFETs Silicon N-Channel MOS DTMOSTK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK8A60W O-220SIS tk8a60 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK16N60W MOSFETs Silicon N-Channel MOS DTMOSTK16N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK16N60W O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK8Q60W MOSFETs Silicon N-Channel MOS DTMOSTK8Q60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK8Q60W PDF

    TK16A60W

    Abstract: TK16
    Text: TK16A60W MOSFETs Silicon N-Channel MOS DTMOSTK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK16A60W O-220SIS TK16A60W TK16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK16A60W5 MOSFETs Silicon N-Channel MOS DTMOSTK16A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		TK16A60W5 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK14A65W5 MOSFETs Silicon N-Channel MOS DTMOSTK14A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		TK14A65W5 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOSTK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		TK31J60W5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK40J60U MOSFETs Silicon N-Channel MOS DTMOSTK40J60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)


    Original     		TK40J60U PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.38 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12X60U PDF

    K13A65U

    Abstract: TK13A65U k13a65 650VVGS marking code TC Silicon N Channel MOS Type Switching Regulator
    Text: TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)


    Original     		TK13A65U K13A65U TK13A65U k13a65 650VVGS marking code TC Silicon N Channel MOS Type Switching Regulator PDF

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV PDF

    TK20X60U

    Abstract: No abstract text available
    Text: TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original     		TK20X60U TK20X60U PDF

    Untitled

    Abstract: No abstract text available
    Text: TK31A60W MOSFET シリコンNチャネルMOS形 DTMOSTK31A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original     		TK31A60W O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK16G60W5 MOSFETs Silicon N-Channel MOS DTMOSTK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original     		TK16G60W5 PDF

    K20J60T

    Abstract: k20j60 TK20J60T SC-65
    Text: TK20J60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS TK20J60T ○ スイッチングレギュレータ用 単位: mm 漏れ電流が低い。 : IDSS = 100 A (最大) (VDS = 600V) 取り扱いが簡単な､エンハンスメントタイプです。


    Original     		TK20J60T -55150/W K20J60T k20j60 TK20J60T SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFET シリコンNチャネルMOS形 DTMOSTK31J60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。 : trr = 135 ns (typ.) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.082 Ω (標準)


    Original     		TK31J60W5 PDF

    TK12D60U

    Abstract: No abstract text available
    Text: TK12D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12D60U Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12D60U TK12D60U PDF

    Untitled

    Abstract: No abstract text available
    Text: TK20A60W MOSFET シリコンNチャネルMOS形 DTMOSTK20A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.13 Ω (標準) (2)


    Original     		TK20A60W O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK17E65W MOSFETs Silicon N-Channel MOS DTMOSTK17E65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.17 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK17E65W O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK14E65W MOSFETs Silicon N-Channel MOS DTMOSTK14E65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK14E65W O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK39N60W5 MOSFETs Silicon N-Channel MOS DTMOSTK39N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		TK39N60W5 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W5 MOSFETs Silicon N-Channel MOS DTMOSTK10A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original     		TK10A60W5 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK35N65W MOSFETs Silicon N-Channel MOS DTMOSTK35N65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK35N65W O-247 PDF