RUR-D815

Abstract: RUR-D810 d810 RUR-D820 2CS-402 RURD820
Contextual Info: 387 5081 G E S OL ID S T A T E UFR Rectifiers - qi “ 01E DE | 3575051 DOlflSn b 18519" DT - o 3 - n - RUR-D810, RUR-D815, RUR-D820 File Number 1356 Ultra High Speed Rectifiers RUR-D810 RUR-D815 RUR-D820 Dual 8-A, High-Speed, High Efficiency

Contextual Info: DlC DIOTEC ELECTRONICS CORP. Data Sheet No.: SESA-200-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A. Tel.: 310 767-1052 Fax: (310)767-7958 2 AMP SUPER-EFFICIENT RECTIFIERS DO-15/DT-15 FEATURES: • Low switching noise • • • • • • Low forward voltage drop

Contextual Info: DIOTEC ELECTRONICS CORP DlC SflHTlG? 000G041 flMO « D I X SflE D Data Sheet No.: SESA-200-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 0 3-IS 2 AMP SUPER-EFFICIENT RECTIFIERS DO-1S/DT-1S FEATURES:

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET P CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to provide customers a minimum on-state resistance and high switching speed

Contextual Info: nixYS Diode Modules MDD 72 uFRMS . = 2 x 1 8 0 A 'f a v m = 2 x 113 a VRRM = 8 0 0 -1800 V ^RSM ^RRM Type 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MDD MDD MDD MDD MDD Symbol ^FRMS ^FAVM ^FSM Test Conditions_ Tyj = 10 ms 50 Hz , sine

T290

Abstract: T290F AEG v 300 aeg t 290 f
Contextual Info: 0029426 A E G CGRP fiì y -^ 5 -/ f DÈj| □ □2em 2 L l 000Sfl7S 4 | T290F Typenreihe/Type range_ T 2 9 0 F _ 200* E le k trisch e Eigenschaften H o ch stzu lä ssig e W erte 400* 600 800 1000 1100 It a v m M axim um p e rm issib le v alues

NTE310

Contextual Info: NTE310 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Trace Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

SCR FIR 3 D

Abstract: DT400-400 SCR FIR A1200 BP107 RS-397 TA20 TA200816 Scans-00139958 TA2016
Contextual Info: POUEREX INC m E N ^ R E X DE I TE^UkSl 0003110 _ Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 0 W ^ - 2 S '- 2 (

40C1500

Abstract: T1200 T1200N T1209N k005
Contextual Info: E G-AKTIENGESELLSCHAFT SIC D • QDSTmS D00b513 □ M A E 6 6 p T 1200 N T 1209 N Typ enreihe/Type range T1200N 1200 1400 1600 1800 _T 1 2 0 9 N

T210N

Abstract: DIN40040 LTWU 0l75A
Contextual Info: 0029426 A E G CORP öl DE I □□E cl45kj QDDtl3b 4 | T210N Typenreihe/Type range_ T210N-_ 200_ 400_ 600_ 700 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values

telefunken katalog

Contextual Info: TELEFUNKEN ELECTRONIC filC D • fiRSQQRb OQObObH 1 m k L & Q T"'*2-5* ^ Typenreihe/Type ränge T16N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Vorwärts-und Rückwärts-Spitzensperrspannung t r m sm Effektiver Durchlaßstrom

Contextual Info: URF25P82E5 URW25P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 306 Ω KF 504 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ473 • Rgtkqfke"cxcncpejg"tcvgf RG/VQ474 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{

DD 607 B

Abstract: F 407 Diode
Contextual Info: URS26P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ VDS"B"Tjmax 872 X TFU*qp+ 20;7 Ω KF 607 C •"Wnvtc"nqy"icvg"ejctig RG/VQ473-3-11 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{

Contextual Info: UniFETTM FDB38N30U N-Channel MOSFET, U-FRFET 300V, 38A, 0.12Ω Features Description • RDS on = 0.103Ω ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

F 407 Diode

Abstract: DIODE FS 607
Contextual Info: URD26P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 20;7 Ω KF 607 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ485 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{

Kfh 505

Abstract: F207 diode
Contextual Info: URD25P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 306 Ω KF 504 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ485 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{

Contextual Info: URY69P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 2029 Ω KF 69 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Yqtnfykfg"dguv"T FU*qp+"kp"VQ"469 RG/VQ469 •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf

MB818251-70

Contextual Info: fÉP í ? December 1992 Edition 2.0 FUJITSU DATA SHEET MB818251-70/-80 2097,152 Bits 262,144x8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial

Contextual Info: URR26P82E5 URC26P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 20;7 Ω KF 607 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ442FP RG/VQ442 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{

D1N4004

Abstract: T221N
Contextual Info: E ^ - A K T I ENGES EL LSCH AF T Û1C D Typ enreihe/Type ränge T221N E le k trisch e Eig enschaften E le ctrica l properties T221 N H ö ch stzu lä ssig e Werte • DÜ5T415 GQGbl47 2 ■ AEGG 400* 600 repetitive peak forward off-state and reverse voltages

T15.1N

Contextual Info: TELEFUNKEN ELECTRONIC filC D H fi'ìSOD'ìb ODDbDbO 4 • ALGG ’T-'ZJÊT T 15.1 N f Typenrelhe/Type range_ T15.1N 400 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values U d r m , U h r m Periodische Vorwärts-und

GH 905

Contextual Info: URF29P82E5 URW29P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 208 Ω KF 905 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ • Yqtnfykfg"dguv"TFU*qp+"kp"VQ/473"cpf"VQ/474 RG/VQ473 •"Wnvtc"nqy"icvg"ejctig RG/VQ474 • Rgtkqfke"cxcncpejg"tcvgf

RGK20

Abstract: t45n
Contextual Info: G - A K T I E N GE SE LL SC HA FT ûlC D • DQS^mS DQDbDöö 1 ■ AEGG T45N T y p e n re lh e /T y p e ra n g e _ T 4 5 N _ 4 0 0 * 600 E le k tris c h e E ig e n s c h a fte n E le c tric a l p ro p e rtie s H ö c h s tz u lä s s ig e W e rte

a-b-c to d-q transformation

Abstract: park and clark transformation PID three phase induction motor transfer function 3 phase to d-q transformation separately excited dc motor Park transformation SPACE VECTOR MODULATION theory ACIM Field Oriented Control a-b-c to d-q transformation of stator currents parameters c language PID AC MOTOR CONTROL
Contextual Info: Freescale Semiconductor Application Note AN2973 Rev. 0, 04/2006 Using the ACIM Vector Control eTPU Function Covers the MCF523x, MPC5500, and all eTPU-Equipped Devices by: Milan Brejl System Application Engineer, Roznov Czech System Center Michal Princ System Application Engineer, Roznov Czech System Center