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    DSS 2 41 Search Results

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    DSS 2 41 Price and Stock

    Diodes Incorporated DSS4160V-7

    Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS4160V-7 74,257
    • 1 $0.26
    • 10 $0.178
    • 100 $0.092
    • 1000 $0.083
    • 10000 $0.05
    Buy Now

    Diodes Incorporated DSS4160T-7

    Bipolar Transistors - BJT SS Low Sat Transisto SOT23 T&R 3K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS4160T-7 38,286
    • 1 $0.33
    • 10 $0.217
    • 100 $0.115
    • 1000 $0.085
    • 10000 $0.075
    Buy Now

    Diodes Incorporated DSS60600MZ4-13

    Bipolar Transistors - BJT LOW VCE(SAT) PNP SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS60600MZ4-13 30,859
    • 1 $0.45
    • 10 $0.39
    • 100 $0.19
    • 1000 $0.15
    • 10000 $0.143
    Buy Now

    Diodes Incorporated DSS60601MZ4-13

    Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS60601MZ4-13 27,383
    • 1 $0.44
    • 10 $0.287
    • 100 $0.235
    • 1000 $0.167
    • 10000 $0.125
    Buy Now

    Diodes Incorporated DSS4160U-7

    Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS4160U-7 12,442
    • 1 $0.26
    • 10 $0.178
    • 100 $0.092
    • 1000 $0.083
    • 10000 $0.062
    Buy Now

    DSS 2 41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gigabyte MOTHERBOARD SERVICE MANUAL

    Abstract: PC MOTHERBOARD SERVICE MANUAL intel 865 PC intel MOTHERBOARD SERVICE MANUAL 865 intel d915gav motherboard manual IXP2350 GA-8I945GTE discovery 300 visiowave intel 865 MOTHERBOARD problem intel ixp2350 d915gav
    Text: Solutions Guide Intel Digital Security Surveillance Part 2 of a Series Intel Digital Security Surveillance Ecosystem Guide ® www.intel.com/info/dss Digital Security Surveillance DSS has never been more vital. To meet the growing worldwide demand, DSS vendors require


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    PDF 1005/DLC/OCG/PP/2K 307055-002US gigabyte MOTHERBOARD SERVICE MANUAL PC MOTHERBOARD SERVICE MANUAL intel 865 PC intel MOTHERBOARD SERVICE MANUAL 865 intel d915gav motherboard manual IXP2350 GA-8I945GTE discovery 300 visiowave intel 865 MOTHERBOARD problem intel ixp2350 d915gav

    Untitled

    Abstract: No abstract text available
    Text: DSS 2x160-0035/45A IFAVM = 2x160 A VRRM = 35 - 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 35 45 35 45 Symbol A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0035A DSS 2x160-0045A A1 Test Conditions Anode 1 Maximum Ratings


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    PDF 2x160-0035/45A 2x160 OT-227 2x160-0035A 2x160-0045A DSS2x160-0045A

    BV45

    Abstract: No abstract text available
    Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 45 45 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM


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    PDF 2x160-0045A 2x160 OT-227 Weight50 DSS2x160-0045A BV45

    2SK2803

    Abstract: FM20
    Text: 2SK2803 Absolute Maximum Ratings External dimensions 1 . FM20 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±3 A ±12 ID (pulse) *1 PD EAS *2 min 450 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit


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    PDF 2SK2803 2SK2803 FM20

    Untitled

    Abstract: No abstract text available
    Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 45 45 miniBLOC, SOT-227 B A2 Type Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM


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    PDF 2x160-0045A 2x160 OT-227 DSS2x160-0045A

    DIODE F10 033 106

    Abstract: DSS 2X160-01A V100A2 DIODE F10
    Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated Preliminary Data VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM


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    PDF 2x160-01A 2x160 OT-227 DSS2x160-01A DIODE F10 033 106 DSS 2X160-01A V100A2 DIODE F10

    2SK2710

    Abstract: No abstract text available
    Text: 2SK2710 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 600 V V(BR) DSS I D = 100µA, VGS = 0V nA VGS = ±30V I DSS 100 µA VDS = 600V, VGS = 0V A VTH 2.0 3.0 ±48 A Re (yfs)


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    PDF 2SK2710 FM100 2SK2710

    Untitled

    Abstract: No abstract text available
    Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.81 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5


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    PDF 2x160-01A 2x160 OT-227 DSS2x160-01A

    Untitled

    Abstract: No abstract text available
    Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated Preliminary Data A2 VRSM VRRM V V 100 100 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5


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    PDF 2x160-01A 2x160 OT-227 DSS2x160-01A

    2x160-01A

    Abstract: 2x160 2X16001A dss2x160-01a DSS2*160 DSS 2X160-01A DSS 2*160-01A
    Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.81 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5


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    PDF 2x160-01A 2x160 OT-227 DSS2x160-01A 2x160-01A 2X16001A dss2x160-01a DSS2*160 DSS 2X160-01A DSS 2*160-01A

    2X16001A

    Abstract: No abstract text available
    Text: DSS 2x160-01A IFAVM = 2x160 A VRRM = 100 V VF = 0.80 V Power Schottky Rectifier Non isolated VRSM VRRM V V 100 100 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 95°C; rectangular, d = 0.5


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    PDF 2x160-01A 2x160 OT-227 DSS2x160-01A 2X16001A

    Untitled

    Abstract: No abstract text available
    Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.73 V Power Schottky Rectifier Non isolated VRSM VRRM V V 45 45 A2 Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-0045A A1 Anode 1 Common cathode Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5


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    PDF 2x160-0045A 2x160 OT-227 DSS2x160-0045A

    2x160

    Abstract: 2x160-0045A
    Text: DSS 2x160-0045A IFAVM = 2x160 A VRRM = 45 V VF = 0.72 V Power Schottky Rectifier Non isolated VRSM VRRM V V 45 45 A2 Type SOT-227 B, miniBLOC Anode 2 DSS 2x160-0045A A1 Common cathode Symbol Conditions IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5 TC = 100°C; rectangular, d = 0.5; per device


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    PDF 2x160-0045A 2x160 OT-227 DSS2x160-0045A 2x160-0045A

    Si21xx

    Abstract: No abstract text available
    Text: S i 2 1 0 7 / 0 8 / 0 9/10 SATELLITE RECEIVER FOR DVB-S/DSS Features The Si2107/08/09/10 are a family of pin-compatible complete front end solutions for DSS and DVB-S digital satellite reception. The IC family incorporates a tuner, demodulator, and LNB controller into a single device resulting in a significant


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    PDF Si2109/10 Si2107/08/09/10 Si2108/10 Si21xx

    Untitled

    Abstract: No abstract text available
    Text: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain


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    PDF FP31QF 28-pin FP31QF WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)


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    PDF FP31QF 28-pin FP31QF JESD22-A114 JESD22-C101 J-STD-020B WJ1-4401

    DSS 2X160-01A

    Abstract: No abstract text available
    Text: DSS 2x160-01 A Power Schottky Rectifier •fa v m V rrM Non isolated VF Preliminary Data 2x160 A 100 V 0.80 V 9 f£ . v’ RSM VRRM V V 100 100 Symbol Type miniBLOC, SOT-227 B Anode 2 DSS 2x160-01A Test Conditions Anode 1 Maximum Ratings Common cathode ^FRMS


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    PDF 2x160-01 2x160-01A 2x160 OT-227 D4-69 2x160-01A D4-70 DSS 2X160-01A

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Power Schottky Rectifier 2x160 A 3 5 -45 V 0.73 V I fa v m V Non isolated rrM VF Preliminary Data v RSM v RRM V V 35 45 35 45 Type miniBLOC, SOT-227 B o A DSS 2X160-0035A DSS 2x160-0045A A1 Anode 2 Ì N/ Symbol Test Conditions Anode 1 Maximum Ratings


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    PDF 2x160 OT-227 2X160-0035A 2x160-0045A

    D449

    Abstract: No abstract text available
    Text: Power Schottky Rectifier •FAVM ^R R M Non isolated vP 2x160 A 35 - 45 V 0.73 V Preliminary Data v ASM v*R R M V V 35 45 35 45 Symbol A2 Type £ miniBLOC, SOT-227 B Anode 2 DSS 2x160-0035A DSS 2x160-0045 A ■ f A1 Test Conditions Anode 1 Maximum Ratings


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    PDF 2x160 OT-227 2x160-0035A 2x160-0045 D4-49 35/45A D449

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50KM-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dim ensions in mm 10 ± 0.3 2 .8 1 0 .2 1 0 V D R IV E V dss . 1 0 0 V rDS ON ( 5 m i2


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    PDF FS50KM-2 55mii 105ns O-220FN

    DIODE D3S 5D

    Abstract: No abstract text available
    Text: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A


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    PDF IRFIZ34E DIODE D3S 5D

    DIODE D3S 5D

    Abstract: diode D3s IRFZ3
    Text: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A


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    PDF IRFIZ34E DIODE D3S 5D diode D3s IRFZ3

    of SD-50 Diode

    Abstract: No abstract text available
    Text: SFP9624 Advanced Power MOSFET FEATURES B V dss = -2 5 0 V 2 . 4 Î2 • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10


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    PDF SFP9624 -250V O-220 of SD-50 Diode

    FZ44N

    Abstract: IRFIZ44N equivalent fz44
    Text: PD - 9.1403A International IÖR Rectifier IRFIZ44N HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55 V FÍDS on = 0 .0 2 4 Í 2 lD = 3 1 A


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    PDF IRFIZ44N FZ44N IRFIZ44N equivalent fz44