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Catalog Datasheet	MFG & Type	PDF	Document Tags
HP07 Abstract: SAS 250 Text: HP07 0.7µ µm High Power Process Power MESFET technology Description - MESFET technology - 0.7µm gate length - Implanted active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, GaAs resistors - Via-holes Main Features þ Transition frequency: 15 GHz	Original	PDF	DSHP077014 HP07 SAS 250

Catalog Datasheet

MFG & Type

PDF

Document Tags

HP07

Abstract: SAS 250
Text: HP07 0.7µ µm High Power Process Power MESFET technology Description - MESFET technology - 0.7µm gate length - Implanted active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, GaAs resistors - Via-holes Main Features þ Transition frequency: 15 GHz

Original

PDF

DSHP077014 HP07 SAS 250