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    RF3931

    Abstract: Gan transistor mobile rf power amplifier transistor GaN BJT DSB070829 GaN amplifier rf gan amplifier
    Text: RF3931 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=30W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation RF IN


    Original     		RF3931 RF3931 DSB070829 Gan transistor mobile rf power amplifier transistor GaN BJT DSB070829 GaN amplifier rf gan amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3932 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=60W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation RF IN


    Original     		RF3932 RF3932 DSB070829 PDF