Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP KPTC-2012SYCK SUPER BRIGHT YELLOW Features Description !2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow source color devices !LOW are made with DH InGaAlP on GaAs substrate POWER CONSUMPTION. ! WIDE VIEWING ANGLE.
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Original
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KPTC-2012SYCK
2000PCS
DSAC0119
NOV/12/2002
KPTC-2012SYCK
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PDF
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KPTC-2012SYCK
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SYCK Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.
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Original
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KPTC-2012SYCK
2000PCS
DSAC0119
JUL/02/2007
KPTC-2012SYCK
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PDF
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SYCK Super Bright Yellow Description Features 2.0mmx1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip.
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Original
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KPTC-2012SYCK
2000pcs
sing010
DSAC0119
DEC/20/2010
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PDF
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KPTC-2012SYCK
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP P/N: KPTC-2012SYCK Features SUPER BRIGHT YELLOW Description 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow source color devices are made LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode.
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Original
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KPTC-2012SYCK
2000PCS
DSAC0119
NOV/11/2005
KPTC-2012SYCK
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PDF
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP KPTC-2012SYCK Features SUPER BRIGHT YELLOW Description 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow source color devices are made LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode.
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Original
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KPTC-2012SYCK
2000PCS
DSAC0119
MAR/17/2005
KPTC-2012SYCK
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PDF
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