KPTD-3216SYCK
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SYCK SUPER BRIGHT YELLOW Features Description ●3.2mmX1.6mm SMT LED, 1.8mm THICKNESS. The Super Bright Yellow device is made with InGaAlP on ●LOW POWER CONSUMPTION. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPTD-3216SYCK
2000PCS
DSAA4411
JUL/10/2007
KPTD-3216SYCK
|
KB2300EW
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB2300EW High Efficiency Red Features Description z Uniform light emitting area. The High Efficiency Red source color devices are made with z Low current operation. Gallium Arsenide Phosphide on Gallium Phosphide Orange
|
Original
|
PDF
|
89mmx3
KB2300EW
DSAA4476
MAR/24/2011
KB2300EW
|
Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR KB2300EW HIGH EFFICIENCY RED Features Description !UNIFORM LIGHT EMITTING AREA. The High Efficiency Red source color devices are !LOW CURRENT OPERATION. made with Gallium Arsenide Phosphide on Gallium ! EASILY Phosphide Orange Light Emitting Diode.
|
Original
|
PDF
|
89mmx3
KB2300EW
DSAA4476
APR/26/2pacitance
APR/26/2003
|
KB2450YW
Abstract: No abstract text available
Text: 19.05mmx3.81mm LED LIGHT BAR Part Number: KB2450YW Yellow Features Description z UNIFORM LIGHT EMITTING AREA. The Yellow source color devices are made with Gallium z LOW CURRENT OPERATION. Arsenide Phosphide on Gallium Phosphide Yellow Light z EASILY MOUNTED ON P.C. BOARDS.
|
Original
|
PDF
|
05mmx3
KB2450YW
DSAA4474
MAY/12/2007
KB2450YW
|
L-1513SRC-C
Abstract: No abstract text available
Text: T-1 3/4 5mm SUPER BRIGHT LED LAMP L-1513SRC-C SUPER BRIGHT RED Features Description ! HYPER The Super Bright Red source color devices are BRIGHTNESS. ! OUTSTANDING ! RELIABLE ! I.C. MATERIAL EFFICIENCY. made with Gallium Aluminum Arsenide Red Light Emitting Diode.
|
Original
|
PDF
|
L-1513SRC-C
DSAA4440
OCT/09/2001
L-1513SRC-C
|
Untitled
Abstract: No abstract text available
Text: 19.05mmx3.81mm LED LIGHT BAR KB2350EW Features ! UNIFORM !LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY ! FLUSH MOUNTED ON P.C. BOARDS. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Original
|
PDF
|
05mmx3
KB2350EW
DSAA4473
APR/26/2003
KB2350EW
|
Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR KB2300EW Features HIGH EFFICIENCY RED Description UNIFORM LIGHT EMITTING AREA. The High Efficiency Red source color devices are made with LOW CURRENT OPERATION. Gallium Arsenide Phosphide on Gallium Phosphide Orange EASILY MOUNTED ON P.C. BOARDS.
|
Original
|
PDF
|
89mmx3
KB2300EW
DSAA4476
APR/21/2005Width.
APR/21/2005
|
L-56BSRD-B
Abstract: No abstract text available
Text: T-1 3/4 5mm BLINKING LED LAMP Part Number: L-56BSRD-B Super Bright Red Features Description z T-1 3/4 package. The Super Bright Red source color devices are made with z With built-in blinking IC. Gallium Aluminum Arsenide Red Light Emitting Diode. z Operation voltage from 3.5V to 14V.
|
Original
|
PDF
|
L-56BSRD-B
DSAA4458
DEC/22/2010
L-56BSRD-B
|
Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR KP-2012P3C Features zMECHANICALLY Description AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-2012 SERIES INFRARED EMITTING LED LAMP. zWATER CLEAR LENS. zPACKAGE zRoHS : 2000PCS / REEL. COMPLIANT. Package Dimensions
|
Original
|
PDF
|
KP-2012P3C
KP-2012
2000PCS
DSAA4435
OCT/22/2005
100uA
940nm
100mW
|
seven segment 6
Abstract: No abstract text available
Text: 14.2mm 0.56INCH SEVEN SEGMENT DISPLAY SA56-21EWA HIGH EFFICIENCY RED Description Features z0.56 INCH DIGIT HEIGHT . The High Efficiency Red source color devices are zLOW CURRENT OPERATION. made with Gallium Arsenide Phosphide on Gallium zEXCELLENT CHARACTER APPEARANCE.
|
Original
|
PDF
|
56INCH)
SA56-21EWA
DSAA4424
MAR/24/2005
SA56-21EWA
seven segment 6
|
L816BGD
Abstract: L816BID L816BYD
Text: 10mm BLINKING LED LAMPS L816BID HIGH EFFICIENCY RED L816BGD GREEN L816BYD YELLOW L816BSRC/B SUPER BRIGHT RED L816BSRD/B SUPER BRIGHT RED Features Description !T-1 3/4 PACKAGE The High Efficiency Red source color devices are made !WITH with Gallium Arsenide Phosphide on Gallium Phosphide
|
Original
|
PDF
|
L816BID
L816BGD
L816BYD
L816BSRC/B
L816BSRD/B
DSAA4471
OCT/10/2001
L816BID
L816BGD
|
KB2500SGD
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR KB2500SGD Features SUPER BRIGHT GREEN Description UNIFORM LIGHT EMITTING AREA. The Super Bright Green source color devices are made LOW CURRENT OPERATION. with Gallium Phosphide Green Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.
|
Original
|
PDF
|
89mmx3
KB2500SGD
DSAA4477
APR/21/2005
KB2500SGD
|
Untitled
Abstract: No abstract text available
Text: 10mm 0.4INCH DUAL DIGIT NUMERIC DISPLAY Part Number: DA04-11SRWA Super Bright Red Features Description z 0.4 inch digit height. The Super Bright Red source color devices are made with z Low current operation. Gallium Aluminum Arsenide Red Light Emitting Diode.
|
Original
|
PDF
|
DA04-11SRWA
DSAA4478
MAR/23/2011
|
Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm BLINKING LED LAMP Part Number: L-56BID Features High Efficiency Red Description T-1 3/4 package. The High Efficiency Red source color devices are made with With built-in blinking IC. Gallium Arsenide Phosphide on Gallium Phosphide Orange Operation voltage from 3.5V to 14V.
|
Original
|
PDF
|
L-56BID
DSAA44NEC
DSAA4457
APR/17/2010
|
|
Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SYCK Super Bright Yellow Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
|
Original
|
PDF
|
KPTD-3216SYCK
2000pcs
216SYCK
DSAA4411
MAR/20/2013
|
Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB2300EW HIGH EFFICIENCY RED Features Description zUNIFORM LIGHT EMITTING AREA. The High Efficiency Red source color devices are made with zLOW CURRENT OPERATION. Gallium Arsenide Phosphide on Gallium Phosphide Orange
|
Original
|
PDF
|
89mmx3
KB2300EW
DSAA4476
OCT/27/2006
KB2300EW
|
Untitled
Abstract: No abstract text available
Text: 10mm 0.4INCH DUAL DIGIT NUMERIC DISPLAY Part Number: DA04-11SRWA Features SUPER BRIGHT RED Description 0.4 INCH DIGIT HEIGHT. The Super Bright Red source color devices are made LOW CURRENT OPERATION. with Gallium Aluminum Arsenide Red Light Emitting EXCELLENT CHARACTER APPEARANCE.
|
Original
|
PDF
|
DA04-11SRWA
DSAA4478
NOV/02/2006
|
KPTD-3216SURCK
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SURCK Hyper Red Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Hyper Red source color devices are made with AlGaInP z Low power consumption. on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.
|
Original
|
PDF
|
KPTD-3216SURCK
2000pcs
JAN/08/2010
KPTD-3216SURCK
DSAA4410
|
Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP KPTD-3216SYCK Features SUPER BRIGHT YELLOW Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. !LOW POWER CONSUMPTION. The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. !WIDE VIEWING ANGLE.
|
Original
|
PDF
|
KPTD-3216SYCK
2000PCS
DSAA4411
DEC/11/2002
KPTD-3216SYCK
|
L-56BSRD-B
Abstract: No abstract text available
Text: T-1 3/4 5mm BLINKING LED LAMP L-56BSRD-B SUPER BRIGHT RED Features Description ! T-1 The Super Bright Red source color devices are made 3/4 PACKAGE . ! WITH BUILT-IN BLINKING IC. ! OPERATION ! BLINKING with Gallium Aluminum Arsenide Red Light Emitting Diode.
|
Original
|
PDF
|
L-56BSRD-B
DSAA4458
JAN/04/2003
L-56BSRD-B
|
L-56BSRD-B
Abstract: No abstract text available
Text: T-1 3/4 5mm BLINKING LED LAMP Part Number: L-56BSRD-B Super Bright Red Features Description z T-1 3/4 PACKAGE. The Super Bright Red source color devices are made with z WITH BUILT BLINKING IC. Gallium Aluminum Arsenide Red Light Emitting Diode. z OPERATION VOLTAGE FROM 3.5V TO 14V.
|
Original
|
PDF
|
L-56BSRD-B
DSAA4458
JUL/10/2007
L-56BSRD-B
|
KP-3216F3C
Abstract: KP-3216
Text: 3.2x1.6mm INFRARED EMITTING DIODE Part Number: KP-3216F3C Features Description z 3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. z MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. z WIDE VIEWING ANGLE.
|
Original
|
PDF
|
KP-3216F3C
2000PCS
DSAA4438
JUL/12/2007
KP-3216F3C
KP-3216
|
Untitled
Abstract: No abstract text available
Text: 8.89mmx3.81mm LED LIGHT BAR KB2500SGD SUPER BRIGHT GREEN Features Description !UNIFORM LIGHT EMITTING AREA. The Super Bright Green source color devices are !LOW CURRENT OPERATION. made with Gallium Phosphide Green Light Emitting ! EASILY Diode. MOUNTED ON P.C. BOARDS.
|
Original
|
PDF
|
89mmx3
KB2500SGD
DSAA4477
APR/26/2003
KB2500SGD
|
KP-3216P3C
Abstract: No abstract text available
Text: PHOTOTRANSISTOR P/N: KP-3216P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Package Dimensions
|
Original
|
PDF
|
KP-3216P3C
KP-3216
2000PCS
DSAA4436
NOV/14/2005
100mW
KP-3216P3C
|