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    KPTD-3216SYCK

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SYCK SUPER BRIGHT YELLOW Features Description ●3.2mmX1.6mm SMT LED, 1.8mm THICKNESS. The Super Bright Yellow device is made with InGaAlP on ●LOW POWER CONSUMPTION. GaAs substrate light emitting diode chip.


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    PDF KPTD-3216SYCK 2000PCS DSAA4411 JUL/10/2007 KPTD-3216SYCK

    KB2300EW

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB2300EW High Efficiency Red Features Description z Uniform light emitting area. The High Efficiency Red source color devices are made with z Low current operation. Gallium Arsenide Phosphide on Gallium Phosphide Orange


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    PDF 89mmx3 KB2300EW DSAA4476 MAR/24/2011 KB2300EW

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB2300EW HIGH EFFICIENCY RED Features Description !UNIFORM LIGHT EMITTING AREA. The High Efficiency Red source color devices are !LOW CURRENT OPERATION. made with Gallium Arsenide Phosphide on Gallium ! EASILY Phosphide Orange Light Emitting Diode.


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    PDF 89mmx3 KB2300EW DSAA4476 APR/26/2pacitance APR/26/2003

    KB2450YW

    Abstract: No abstract text available
    Text: 19.05mmx3.81mm LED LIGHT BAR Part Number: KB2450YW Yellow Features Description z UNIFORM LIGHT EMITTING AREA. The Yellow source color devices are made with Gallium z LOW CURRENT OPERATION. Arsenide Phosphide on Gallium Phosphide Yellow Light z EASILY MOUNTED ON P.C. BOARDS.


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    PDF 05mmx3 KB2450YW DSAA4474 MAY/12/2007 KB2450YW

    L-1513SRC-C

    Abstract: No abstract text available
    Text: T-1 3/4 5mm SUPER BRIGHT LED LAMP L-1513SRC-C SUPER BRIGHT RED Features Description ! HYPER The Super Bright Red source color devices are BRIGHTNESS. ! OUTSTANDING ! RELIABLE ! I.C. MATERIAL EFFICIENCY. made with Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF L-1513SRC-C DSAA4440 OCT/09/2001 L-1513SRC-C

    Untitled

    Abstract: No abstract text available
    Text: 19.05mmx3.81mm LED LIGHT BAR KB2350EW Features ! UNIFORM !LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY ! FLUSH MOUNTED ON P.C. BOARDS. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.


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    PDF 05mmx3 KB2350EW DSAA4473 APR/26/2003 KB2350EW

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB2300EW Features HIGH EFFICIENCY RED Description UNIFORM LIGHT EMITTING AREA. The High Efficiency Red source color devices are made with LOW CURRENT OPERATION. Gallium Arsenide Phosphide on Gallium Phosphide Orange EASILY MOUNTED ON P.C. BOARDS.


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    PDF 89mmx3 KB2300EW DSAA4476 APR/21/2005Width. APR/21/2005

    L-56BSRD-B

    Abstract: No abstract text available
    Text: T-1 3/4 5mm BLINKING LED LAMP Part Number: L-56BSRD-B Super Bright Red Features Description z T-1 3/4 package. The Super Bright Red source color devices are made with z With built-in blinking IC. Gallium Aluminum Arsenide Red Light Emitting Diode. z Operation voltage from 3.5V to 14V.


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    PDF L-56BSRD-B DSAA4458 DEC/22/2010 L-56BSRD-B

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR KP-2012P3C Features zMECHANICALLY Description AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-2012 SERIES INFRARED EMITTING LED LAMP. zWATER CLEAR LENS. zPACKAGE zRoHS : 2000PCS / REEL. COMPLIANT. Package Dimensions


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    PDF KP-2012P3C KP-2012 2000PCS DSAA4435 OCT/22/2005 100uA 940nm 100mW

    seven segment 6

    Abstract: No abstract text available
    Text: 14.2mm 0.56INCH SEVEN SEGMENT DISPLAY SA56-21EWA HIGH EFFICIENCY RED Description Features z0.56 INCH DIGIT HEIGHT . The High Efficiency Red source color devices are zLOW CURRENT OPERATION. made with Gallium Arsenide Phosphide on Gallium zEXCELLENT CHARACTER APPEARANCE.


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    PDF 56INCH) SA56-21EWA DSAA4424 MAR/24/2005 SA56-21EWA seven segment 6

    L816BGD

    Abstract: L816BID L816BYD
    Text: 10mm BLINKING LED LAMPS L816BID HIGH EFFICIENCY RED L816BGD GREEN L816BYD YELLOW L816BSRC/B SUPER BRIGHT RED L816BSRD/B SUPER BRIGHT RED Features Description !T-1 3/4 PACKAGE The High Efficiency Red source color devices are made !WITH with Gallium Arsenide Phosphide on Gallium Phosphide


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    PDF L816BID L816BGD L816BYD L816BSRC/B L816BSRD/B DSAA4471 OCT/10/2001 L816BID L816BGD

    KB2500SGD

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB2500SGD Features SUPER BRIGHT GREEN Description UNIFORM LIGHT EMITTING AREA. The Super Bright Green source color devices are made LOW CURRENT OPERATION. with Gallium Phosphide Green Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.


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    PDF 89mmx3 KB2500SGD DSAA4477 APR/21/2005 KB2500SGD

    Untitled

    Abstract: No abstract text available
    Text: 10mm 0.4INCH DUAL DIGIT NUMERIC DISPLAY Part Number: DA04-11SRWA Super Bright Red Features Description z 0.4 inch digit height. The Super Bright Red source color devices are made with z Low current operation. Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF DA04-11SRWA DSAA4478 MAR/23/2011

    Untitled

    Abstract: No abstract text available
    Text: T-1 3/4 5mm BLINKING LED LAMP Part Number: L-56BID Features High Efficiency Red Description T-1 3/4 package. The High Efficiency Red source color devices are made with With built-in blinking IC. Gallium Arsenide Phosphide on Gallium Phosphide Orange Operation voltage from 3.5V to 14V.


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    PDF L-56BID DSAA44NEC DSAA4457 APR/17/2010

    Untitled

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SYCK Super Bright Yellow Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


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    PDF KPTD-3216SYCK 2000pcs 216SYCK DSAA4411 MAR/20/2013

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB2300EW HIGH EFFICIENCY RED Features Description zUNIFORM LIGHT EMITTING AREA. The High Efficiency Red source color devices are made with zLOW CURRENT OPERATION. Gallium Arsenide Phosphide on Gallium Phosphide Orange


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    PDF 89mmx3 KB2300EW DSAA4476 OCT/27/2006 KB2300EW

    Untitled

    Abstract: No abstract text available
    Text: 10mm 0.4INCH DUAL DIGIT NUMERIC DISPLAY Part Number: DA04-11SRWA Features SUPER BRIGHT RED Description 0.4 INCH DIGIT HEIGHT. The Super Bright Red source color devices are made LOW CURRENT OPERATION. with Gallium Aluminum Arsenide Red Light Emitting EXCELLENT CHARACTER APPEARANCE.


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    PDF DA04-11SRWA DSAA4478 NOV/02/2006

    KPTD-3216SURCK

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: KPTD-3216SURCK Hyper Red Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Hyper Red source color devices are made with AlGaInP z Low power consumption. on GaAs substrate Light Emitting Diode. z Ideal for backlight and indicator.


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    PDF KPTD-3216SURCK 2000pcs JAN/08/2010 KPTD-3216SURCK DSAA4410

    Untitled

    Abstract: No abstract text available
    Text: 3.2x1.6mm SMD CHIP LED LAMP KPTD-3216SYCK Features SUPER BRIGHT YELLOW Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. !LOW POWER CONSUMPTION. The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. !WIDE VIEWING ANGLE.


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    PDF KPTD-3216SYCK 2000PCS DSAA4411 DEC/11/2002 KPTD-3216SYCK

    L-56BSRD-B

    Abstract: No abstract text available
    Text: T-1 3/4 5mm BLINKING LED LAMP L-56BSRD-B SUPER BRIGHT RED Features Description ! T-1 The Super Bright Red source color devices are made 3/4 PACKAGE . ! WITH BUILT-IN BLINKING IC. ! OPERATION ! BLINKING with Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF L-56BSRD-B DSAA4458 JAN/04/2003 L-56BSRD-B

    L-56BSRD-B

    Abstract: No abstract text available
    Text: T-1 3/4 5mm BLINKING LED LAMP Part Number: L-56BSRD-B Super Bright Red Features Description z T-1 3/4 PACKAGE. The Super Bright Red source color devices are made with z WITH BUILT BLINKING IC. Gallium Aluminum Arsenide Red Light Emitting Diode. z OPERATION VOLTAGE FROM 3.5V TO 14V.


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    PDF L-56BSRD-B DSAA4458 JUL/10/2007 L-56BSRD-B

    KP-3216F3C

    Abstract: KP-3216
    Text: 3.2x1.6mm INFRARED EMITTING DIODE Part Number: KP-3216F3C Features Description z 3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. z MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. z WIDE VIEWING ANGLE.


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    PDF KP-3216F3C 2000PCS DSAA4438 JUL/12/2007 KP-3216F3C KP-3216

    Untitled

    Abstract: No abstract text available
    Text: 8.89mmx3.81mm LED LIGHT BAR KB2500SGD SUPER BRIGHT GREEN Features Description !UNIFORM LIGHT EMITTING AREA. The Super Bright Green source color devices are !LOW CURRENT OPERATION. made with Gallium Phosphide Green Light Emitting ! EASILY Diode. MOUNTED ON P.C. BOARDS.


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    PDF 89mmx3 KB2500SGD DSAA4477 APR/26/2003 KB2500SGD

    KP-3216P3C

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR P/N: KP-3216P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE KP-3216 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Package Dimensions


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    PDF KP-3216P3C KP-3216 2000PCS DSAA4436 NOV/14/2005 100mW KP-3216P3C