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    Untitled

    Abstract: No abstract text available
    Text: DMN15H310SE 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID TA = +25°C • 100% Unclamped Inductive Switch (UIS) Test in Production  Fast Switching Speed 310mΩ @ VGS = 10V 2.0A  Low On-Resistance 330mΩ @ VGS = 5.0V 1.9A 


    Original     		PDF DMN15H310SE OT223 DS37377

    MTP10N15L

    Abstract: MTM10N15L 10N15L MTM10N12L 10n15 MTP10N12L Motorola TMOS Power FET P-Channel
    Text: Order this data sheet by MTM10N12L/D MOTOROLA • I SEM ICONDUCTOR h h h h TECHNICAL DATA MTM10N12L MTM10N15L MTP10N12L MTP10N15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancem ent M od e Silico n Gate T M O S These Logic Level TMOS Power FETs are designed for high


    OCR Scan     		PDF MTM10N12L/D DS3737 MTM10N12L/D MTP10N15L MTM10N15L 10N15L MTM10N12L 10n15 MTP10N12L Motorola TMOS Power FET P-Channel