DS130423 Search Results

DS1304

Abstract: RFMD HEMT GaN SiC amplifier circuit diagram class E 30w
Text: RF3931D 30W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 14dB at 2GHz  48V Typical Packaged Performance  Output Power: 50W at P3dB  Drain Efficiency: 65% at P3dB