SZA6044Z
Abstract: HEMT marking P 24 lead plastic qfn 4mmX4mm
Text: SZA-6044 SZA-6044 5.1GHzto5.9 GHz ¼Watt Power Amplifier with Active Bias 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor
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SZA-6044
SZA-6044
DS110714
SZA-6044"
SZA6044ZSQ
SZA6044ZSR
SZA6044Z
SZA6044ZPCK-EVB1
SZA6044Z
HEMT marking P
24 lead plastic qfn 4mmX4mm
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ATC100B150JT
Abstract: rfmd envelope tracking
Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power>240W Advanced Heat Sink Technology RF IN
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RFG1M09180
700MHZ
1000MHZ
RFG1M09180
RF400-2
865MHz
960MHz
47dBm
ATC100B150JT
rfmd envelope tracking
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RF9810
Abstract: rf98
Text: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA High Efficiency at Rated POUT VBATT =3.5V GSM850/EGSM900=41% DCS1800/PCS1900=38% Integrated VBATT Tracking Circuit for Improved Switching Spectrum
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RF9810
63mmx5
24mmx1
B34/39
25dBm
GSM850/EGSM900
DCS1800/PCS1900
RF9810TR13
RF9810TR7
EIA-481.
RF9810
rf98
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Untitled
Abstract: No abstract text available
Text: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA Proven PowerStar Architecture Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions Integrated VBATT Tracking Circuit
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RF9810
GSM850/EGSM900
DCS1800/PCS1900
RF716x
RF9801/2
EIA-481.
GSM850/EGSM900/DCS1800/PCS1900
RF9810SB
RF9810PCBA-41X
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