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    DS100527 Search Results

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    80N65B4

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH80N65B4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 80A 2.0V 63ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH80N65B4 IC110 O-247 80N65B4

    RFVC1800

    Abstract: RFVC-1800
    Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The


    Original     		PDF RFVC1800 RFVC1800 DS100527 RFVC1800PCK-410 RFVC1800S2 10pcs RFVC-1800

    FPD6836SOT343E

    Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
    Text: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD6836SOT343E FPD6836SOT3 43ELow-Noise OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343E mx750 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540