ATC800A
Abstract: RF3931 ER35
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB
|
Original
|
PDF
|
RF3931
EAR99
RF3931
cellul01L
GRM55ER72A475KA01L
100uF,
ECE-V1HA101UP
ATC800A
ER35
|
SZP-3026Z
Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
|
Original
|
PDF
|
SZP-3026Z
SOF-26
SZP-3026Z
DS091202
SZP3026Z*
SZP3026Z-EVB1
ma 529
SZP3026
SOF-26
3.5GHz BJT
|
SZP-5026
Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
|
Original
|
PDF
|
SZP-5026Z
SOF-26
SZP-5026Z
SZP5026Z
SZP5026Z-EVB1
SZP5026Z-EVB2
15GHz
35GHz
DS091202
SZP-5026
600s5r6cw250
5.7Ghz low noise amplifier
SOF-26
MLCC rework
recommended land pattern for 0402 cap
e483
|
Cap 0603 X7R
Abstract: SOF-26 SZP-2026Z recommended land pattern for 0402 cap
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
|
Original
|
PDF
|
SZP-2026Z
SOF-26
SZP-2026Z
o026Z"
SZP2026Z
SZP2026Z-EVB1
SZP2026Z-EVB2
DS091202
Cap 0603 X7R
SOF-26
recommended land pattern for 0402 cap
|
Untitled
Abstract: No abstract text available
Text: PC2600AE-47H PC2600AE47HLow Noise, High Gain SiGe HBT 2470MHz TO 2730MHz DROP-IN CIRCULATOR Package: Drop-in, 0.75inx0.75in Product Description Features The PC2600AE-47H is a small, low cost drop-in circulator designed for applications in high performance linear power amplifiers for wireless infrastructure base stations. These circulators feature a robust construction for
|
Original
|
PDF
|
PC2600AE-47H
PC2600AE47HLow
2470MHz
2730MHz
75inx0
PC2600AE-47H
-70dBc
DS091202
|
DROP-IN CIRCULATOR
Abstract: No abstract text available
Text: PC2140AE-48H PC2140AE48HLow Noise, High Gain SiGe HBT 2110MHz TO 2170MHz DROP-IN CIRCULATOR Package: Drop-in, 0.75inx0.75in Product Description Features The PC2140AE-48H is a small, low cost drop-in circulator designed for applications in high performance linear power amplifiers for wireless infrastructure base stations. These circulators feature a robust construction for
|
Original
|
PDF
|
PC2140AE-48H
PC2140AE48HLow
2110MHz
2170MHz
75inx0
PC2140AE-48H
-70dBc
DS091202
DROP-IN CIRCULATOR
|