Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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Untitled
Abstract: No abstract text available
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
FMA3058-000
FMA3058-000SQ
FMA3058-000S3
DS090609
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RFVC1800
Abstract: RFVC-1800
Text: RFVC1800 RFVC1800 Preliminary WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The
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RFVC1800
RFVC1800
DS090609
RFVC-1800
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FMA3058
Abstract: MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
20GHz
-12dB
-10dB
FMA3058-000
MIL-HDBK-263
fma-3058
GaN Amplifier 20GHz
DS090609
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FPD750
Abstract: MIL-HDBK-263 InP HBT transistor DS090609
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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Original
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FPD750
FPD7500
FPD750
25mx750m
OT343,
12GHz
38dBm
MIL-HDBK-263
InP HBT transistor
DS090609
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