Untitled
Abstract: No abstract text available
Text: SKiiP 11NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DS .< .<1Y L/DS -* Q HG R<J 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< -[ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
|
Original
|
PDF
|
11NAB065V1
11NAB065V1
|
Untitled
Abstract: No abstract text available
Text: SKiiP 13NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DS .< .<1[ L/DS -* Q HG R<J 45%7* 2&97'8:*7 *B7?: :76 -* Q HG UVNW R< -] Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
|
Original
|
PDF
|
13NAB065V1
13NAB065V1
|
BSC070N10NS3
Abstract: 070n10ns IEC61249-2-21 JESD22 BSC070N10NS3 G
Text: BSC070N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • Very low gate charge for high frequency applications • Optimized for dc-dc conversion 100 V R DS on ,max 7 mΩ ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)
|
Original
|
PDF
|
BSC070N10NS3
IEC61249-2-21
070N10NS
070n10ns
IEC61249-2-21
JESD22
BSC070N10NS3 G
|
STM4472
Abstract: norma M4472
Text: S T M4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel Enhancement Mode Field Effect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m ıΩ ) Max ID R ugged and reliable.
|
Original
|
PDF
|
M4472
STM4472
norma
M4472
|
Untitled
Abstract: No abstract text available
Text: SKiiP 26NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper M<DS .< .<1Z M/DS -? Q HG R<K 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< -¥ Diode - Inverter, Chopper MiniSKiiP 2 -* Q HG VWTX R< .P .P1Z -¥
|
Original
|
PDF
|
26NAB065V1
26NAB065V1
|
STM4472
Abstract: M4472
Text: Green Product S T M4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel Enhancement Mode Field Effect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m ıΩ ) Max R ugged and reliable.
|
Original
|
PDF
|
M4472
STM4472
M4472
|
schematic diagram lightning protection
Abstract: P1800SCMC RC3304N RJ48 surge surge APPLICATION note GR-1089 P0080SCMC T1108 lightning surge protection circuit diagram
Text: TAN-058 Application Note Sept 7, 2006 DS-1/E1 GR-1089 Surge Protection INTRODUCTION Physical layer devices, such as DS-1/E1 LIU Line Interface Units and Framer Combo devices with integrated LIU, are responsible for the interconnection between network elements. These devices,
|
Original
|
PDF
|
TAN-058
GR-1089
schematic diagram lightning protection
P1800SCMC
RC3304N
RJ48
surge
surge APPLICATION note
P0080SCMC
T1108
lightning surge protection circuit diagram
|
S4228
Abstract: No abstract text available
Text: S T M7822A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 7 @ V G S = 10V
|
Original
|
PDF
|
M7822A
S4228
|
070N06L
Abstract: DIODE smd marking Ag PG-TO220-3 070N0
Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 7 mΩ 80 A • 175 °C operating temperature
|
Original
|
PDF
|
IPB070N06L
IPP070N06L
PG-TO263-3
PG-TO220-3
070N06L
070N06L
DIODE smd marking Ag
PG-TO220-3
070N0
|
Untitled
Abstract: No abstract text available
Text: SKiiP 28AC065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K<DS .< .<1[ K/DS -* Q HG R<O 45%7* 2&97'8:*7 *B7?: :76 -* Q HG VWTX R< &B ¥ M L* -^ Diode - Inverter MiniSKiiP 2 .P .P1[ -* Q HG VWTX R< &B ¥ M L* -^ 3-phase bridge inverter
|
Original
|
PDF
|
28AC065V1
|
STM7822A
Abstract: WT7822AM
Text: WT7822AM Surface Mount N-Channel Enhancement Mode MOSFET 8 DRAIN SOURCE VOLTAGE 6 5 D 4 G 14 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free 25 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <7 mΩ@VGS=10V R DS(ON) <9 mΩ@VGS=4.5V
|
Original
|
PDF
|
WT7822AM
02-Aug-05
STM7822A
WT7822AM
|
Untitled
Abstract: No abstract text available
Text: DM5885 1 720H Decoder Mix 4 NTSC/PAL Channels to One SD or HD Signal1 1 DAVICOM Semiconductor, Inc. DM5885 720H Decoder Mix 4 NTSC/PAL Channels to One SD or HD Signal 23431567741 Preliminary Version: DM5885-DS-P01 March 7, 2013 Preliminary Doc No: DM5885-DS-P01
|
Original
|
PDF
|
DM5885
DM5885-DS-P01
pin28
pin32)
1234567831529AAAAAAAAAAAodem
|
22DN20NS
Abstract: BSC22DN20NS3 bsc22 IEC61249-2-21 JESD22
Text: Type BSC22DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 200 V RDS on ,max 225 mW ID 7 A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) PG-TDSON-8
|
Original
|
PDF
|
BSC22DN20NS3
IEC61249-2-21
22DN20NS
22DN20NS
bsc22
IEC61249-2-21
JESD22
|
Diode DD100
Abstract: BSZ22DN20NS3 22DN20N DD100
Text: Type BSZ22DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 200 V RDS on ,max 225 mW ID 7 A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) PG-TSDSON-8
|
Original
|
PDF
|
BSZ22DN20NS3
IEC61249-2-21
22DN20N
Diode DD100
22DN20N
DD100
|
|
|
Untitled
Abstract: No abstract text available
Text: / = 7 S G S -T H O M S O N » » i t i » * STC101 PARALLEL DS-LINKT ADAPTOR ENGINEERING DATA FEATURES • High speed parallel to DS-Link converter. ■ Data-Strobe Link DS-LinkT interface device for high speed asynchronous communications avoids the need for high speed clocks within the
|
OCR Scan
|
PDF
|
STC101
STC104
|
Untitled
Abstract: No abstract text available
Text: SÌ4824DY - SNicönix Asymmetric N-Ch, Reduced Qg, Fast Switching MOSFET cS PRODUCT SUM M ARY V ds V r iC V I d (A) DS(ON) (-2) 0.040 @ VGS = 1 0 V ± 4 .7 0.065 @ V GS = 4.5 V
|
OCR Scan
|
PDF
|
4824DY
S-56946--
ov-98
|
STP8N10
Abstract: transistor BC 945
Text: fZ 7 ^ 7# S C S -T H O M S O N M e ^ lIL llC T M m iC i S T P 8 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP8N10 • . . . . . . . V dss R dS oii Id 100 V < 0.45 Q 8 A TYPICAL R ds(oii) = 0.4 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
OCR Scan
|
PDF
|
STP8N10
STP8N10
10CfC
O-220
0073M01
O-220
D0734Q2
transistor BC 945
|
4900 SIEMENS
Abstract: buz48a 30VN C67078-A1605-A3 buz48
Text: ÖÖD 1> m fl23SbOS Q G m b 3 0 7 « S I E G 88D 14630 D 7 ’V 3 ^ ”/ 3 BUZ 48 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channel Draln-source voltage l^DS Continuous drain current Id Draln-source on-resistance ^DS on 500 V 6,8 A 0,8 n Description SIPMOS, N-channal, enhancement mode
|
OCR Scan
|
PDF
|
fl23SbOS
0Dmb30
C67078-A1605-A3
4900 SIEMENS
buz48a
30VN
C67078-A1605-A3
buz48
|
3SK121
Abstract: 3SK121 fet 3SK101 Transistor 3sk121 2sc3602 3SK114 3SK102 2SC2804 3SK115 2SC2876
Text: > MOS FET < •d s s Type No. i N-Channel ' P-channel Application VH F Amp FM RF Cascode Type 2SK241 lYfsl TYP. V DS 'D pd i (V) (mA) (mW) (mA) I I 20 30 200 1.5~14 V ds V GS (V) (V) 10 Y :3 ~ 7 0 : 1 .5 - 3.5 (mS) 10 V ds V GS (V) (V) (PF) 10 10 0.05 -3
|
OCR Scan
|
PDF
|
2sk241
3SK121
3sk101
3SK102
3SK114
3SK115
3SK145
3SK121
3SK121 fet
3SK101
Transistor 3sk121
2sc3602
3SK114
3SK102
2SC2804
3SK115
2SC2876
|
Untitled
Abstract: No abstract text available
Text: SÌ4967DY VISHAY Siliconix ▼ Dual P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY V ds (V) r -1 2 e < \*° I d (A) DS(ON) (-2) ± 7 .5 0.023 @ V GS = —4.5 V 0.030 @ V GS = -2 .5 V ± 6 .7 0.045 @ V GS = -1 .8 V ± 5 .4 s2 Si o o SO -8 Di
|
OCR Scan
|
PDF
|
4967DY
S-59654--
24-Aug-98
|
0828C
Abstract: No abstract text available
Text: öflD D • 88D flS35bQ5 D014S34 □ « S I E G 14534 7~ D . U BUZ 28 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel a 100 V Draln-source voltage l^DS a 18 A Continuous drain current /d Draln-source on-resistance ^DS on =» 0,1 n Description
|
OCR Scan
|
PDF
|
flS35bQ5
D014S34
C67078-A1608-A2
1235b05
0828C
|
SC06140
Abstract: STP60NE03L-10 STP60N 10
Text: = 7 S G S -T H O M S O N k 7# [MgMilLie'irifiiiSMfSS STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V ds s S T P 60N E 03L-1 0 30 V R Id d S o i i < 0 .0 1 o a 60 A . TYPICAL R Ds(on) =0.007 . EXCEPTIONAL dv/dt C APABILITY
|
OCR Scan
|
PDF
|
STP60NE03L-10
STP60NE03L-1
O-220
P011C
SC06140
STP60NE03L-10
STP60N 10
|
Untitled
Abstract: No abstract text available
Text: SÌ6410DQ VI^ Y - Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.014 @ VGS = 10 V ±7 .8 0.021 @ VGS = 4.5 V ±6 .3 30 \ \ D Q TSSOP-8 * Source Pins 2, 3, 6 and 7
|
OCR Scan
|
PDF
|
6410DQ
S-56945--
23-Nov-98
|
buz64
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type V Ds BUZ 64 400 V ^DS on 11.5 A 0.4 il M axim um Ratings Parameter Continuous drain current, 7C = 31 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7] max
|
OCR Scan
|
PDF
|
67078-S1017-A2
buz64
|
