Connecteurs 84
Abstract: D1630 DS BK 09 Buchsenleiste
Text: D-Sub Steckverbinder für Bandkabel Stiftleiste D-Sub Connectors for Flat Cable Connecteurs Sub-D pour câbles plats Connecteur mâle Male Header D C 2,84 Ø 3,05 21 1,4 5,85 9,4 1,37 B A E 1,4 D C 5,68 E 5,85 21 12,1 Ø 3,05 12,5 B A 15,4 Art. Nr. Art. No.
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8086 opcode table for 8086 microprocessor
Abstract: 8086 instruction set 8086 mnemonic opcode PM 438 BL 8086 opcode sheet 8086 opcode sheet free download 80387 programmers reference manual 8086 instruction set opcodes 8086 opcode machine code intel 8086 INSTRUCTION SET
Text: ch01.bk : title.fm4 Page 1 Friday, January 17, 1997 12:59 PM Intel Architecture Software Developer’s Manual Volume 2: Instruction Set Reference NOTE: The Intel Architecture Software Developer’s Manual consists of three volumes: Basic Architecture, Order Number 243190; Instruction Set
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sub-d 25 polig
Abstract: D-SUB 9 PIN to 9 pin case DH25S D-Sub 9 pol D-Sub 9 pol 90 sub-d KT0915 sub-d 37 pin sub-d 36 pin SUB-D 9 pol
Text: D-Sub Hoods D-Sub Hauben DH . S Capots pour Connecteurs Sub-D DH . M KT D-Sub Haube DH D-Sub Hood DH Capot Sub-D DH – – – – großer Kabelraum wenige Einzelteile Breitmaß C=3 TE 9-37 polige Ausführung im 3 TE Raster reihbar, daher besonders für die 19"
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WMV smd transistor
Abstract: smd mk
Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .
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STBVR81
Abstract: touch button STBVR81LQ6 AT-FM-10K EN292-1 EN292-2 STBVR81LQ STBVR81L SMB30S
Text: STB Self-Checking Optical Touch Buttons Self-Checking Ergonomic Actuating Devices STB Self-Checking Optical Touch Button Features • Diverse-redundant microcontroller-based photoelectric touch buttons • Continuous internal self-checking operation • Ergonomically designed to eliminate hand, wrist and arm stresses associated with
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intel 8059
Abstract: 6332 prom BWG10 46E8H vga bios reh3
Text: STPC CLIENT BIOS WRITER’S GUIDE Revision 1.0 STMicroelectronics Technoparc du Pays de Gex -B.P. 112 165, rue Edouard Branly 01637 Saint Genis Pouilly France Revised September 9, 1998 STMicroelectronics values your feedback. Please send it and any recommendations you may have regarding this document to:
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BWG10"
intel 8059
6332 prom
BWG10
46E8H
vga bios
reh3
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H1738-2
Abstract: T30GRYB11P STBVP6-78974 13ga 8lm2tc10 Polypropylene Copolymer STBVP6-RB2E02 SG-250 bracket ISO13849-1 QDS-815C
Text: DUO-TOUCH Run Bar with STB Buttons Self-Checking Ergonomic Actuating Devices Features • Ergonomic design for reduced hand, wrist, and arm stresses associated with repeated switch operation; requires no physical pressure to operate • Designed to minimize the possibility of defeat and accidental actuation
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MXP80A-075-503-00
Abstract: MXA80 UFR41B DRL71 circuit diagram of 7.5 kVA power inverter 2.5 kva inverter diagrams XGS11A ttl/stegmann encoder AG
Text: Drive Technology \ Drive Automation \ System Integration \ Services System Manual MOVIAXIS Multi-Axis Servo Inverter Edition 09/2013 20062540 / EN SEW-EURODRIVE—Driving the world Contents Contents 1 System description . 7
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DOP11B
MXP80A-075-503-00
MXA80
UFR41B
DRL71
circuit diagram of 7.5 kVA power inverter
2.5 kva inverter diagrams
XGS11A
ttl/stegmann encoder AG
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Diode marking MFW
Abstract: marking MFW MS CONNECTORS E224053 HD15 by114
Text: ECBT2.E224053 - Connectors for Use in Data, Signal, Control and Power Applications - . Page 1 of 6 ECBT2.E224053 Connectors for Use in Data, Signal, Control and Power Applications - Component Page Bottom Connectors for Use in Data, Signal, Control and Power Applications - Component
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E224053
E224053
Diode marking MFW
marking MFW
MS CONNECTORS
HD15
by114
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TAG 8907
Abstract: TAG 8912 12-0-12 220V ac transformer ALTECH 2094.0 Miniature fuses color coding gr1001 Q24e AQ41 LEDA 1006 Q44E
Text: FEED-THROUGH ➤ 44mm 1.73 in. 35 or 32mm DIN Rail ➤ ➤ 45mm (1.77 in.) ➤ 27mm (1.07 in.) ➤ ➤ TS35x7.5 39mm (1.54 in.) TS32x15 43mm (1.70 in.) TS35x7.5 44mm (1.73 in.) TS32x15 48mm (1.89 in.) ➤ ➤ ➤ SRK2.5 RK2.5 RK1.5-4 Save installation time with our
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TS35x7
TS32x15
10-Paks
E95701)
LR42110)
SL10/32
TS32x15/U1
TS32x15/U2
TAG 8907
TAG 8912
12-0-12 220V ac transformer
ALTECH 2094.0
Miniature fuses color coding
gr1001
Q24e
AQ41
LEDA 1006
Q44E
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Untitled
Abstract: No abstract text available
Text: International [bk]Rectifier PD-9.1352 IRF530NS PRELIMINARY H E X F E # Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V 'DS on = 0.11Q
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IRF530NS
0023b34
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4069U8
Abstract: 40107B 40107 dc motor 5v 2watt IC 2030 schematic diagram HCF40107 S-3411 s3411
Text: nnrwur s fi s - t h o h s o n 07C t I 7=i23a_3j?_npisg5s_5_ b U o /H lu o 1 INTEGRATED CIRCUIT hcc/hcfwbi J _ 14iC 09116 S G S SEMICONDUCTOR CORP o '1 r 9 - Z - 2 .i 7929225 DUAL 2-INPUT NAND BUFFER/DRIVER • • • • • • 32 TIMES STANDARD B-SERIES OUTPUT CURRENT DR IVE SINKING C A PAB ILITY -136 mA
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40107B
I/4HCC/HCF400IAE
2HCC/HCF40107B
4069U8
40107B
40107
dc motor 5v 2watt
IC 2030 schematic diagram
HCF40107
S-3411
s3411
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tms418169dz
Abstract: bk 16D M124F TMS418169 TM248GBK32F TM248GBK32 TM124FBK32U TM124FBK32F TM248GBK32U
Text: TM124FBK32F, TM124FBK32U 1 048576 BY 32-BIT DYNAMIC RAM MODULE TM248GBK32F, TM248GBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE S M M S 6 6 0 -M A R C H 1996 • O r ga ni z a t i on TM1 24 F BK 3 2 F . . . 1 048 576 x 32 T M2 48 GB K3 2F . . . 2 097 1 52 x 32
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TM124FBK32F,
TM124FBK32U
32-BIT
TM248GBK32F,
TM248GBK32U
72-Pin
tms418169dz
bk 16D
M124F
TMS418169
TM248GBK32F
TM248GBK32
TM124FBK32F
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TM248NBK36U
Abstract: TM124MBK36U TM248NBK36F TM124MBK36F
Text: TM124MBK36F, TM124MBK36U1048576 BY 36-BIT DRAM MODULE TM248NBK36F, TM248NBK36U 2097152 BY 36-BIT DRAM MODULE SMMS650A - APRIL 1995 - REVISED JUNE 1995 | • Organization TM124MBK36F . . . 1 048 576 x 36 TM248NBK36F . . . 2 097 152 x 36 • Single 5-V Power Supply ±10% Tolerance
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TM124MBK36F,
TM124MBK36U1048576
36-BIT
TM248NBK36F,
TM248NBK36U
SMMS650A
TM124MBK36F
TM248NBK36F
72-Pln
TM124MBK36U
TM248NBK36F
TM124MBK36F
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2SK1981-01
Abstract: vncr E-HC A2309
Text: 2SK1981-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • features • H g h speed switching • Low on-resistance • N :>secondary breakdown • Low driving power • H g h voltage • V,;s — ± 30 V Guarantee • A ralanche-proof
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2SK1981-01
TQ-220AB
SC-46
vncr
E-HC
A2309
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2SK2028-01
Abstract: 2SK2028-01MR T151 MBIS Amplifier
Text: 2SK2028-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance ♦Si 4,5*0,2 • No secondary breakdown 2 .7 ±0 .2 • Low driving power • High voltage • V CS“ ±30V Guarantee
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2SK2028-01MR
SC-67
GaTS30
2SK2028-01
2SK2028-01MR
T151
MBIS Amplifier
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TMS44460DJ
Abstract: No abstract text available
Text: TM124MBK36B, TM124MBK36R1048576 BY 36-BIT TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS137E-JANUARY 1991 -REVISEDJUNE 1995 Organization TM124MBK36B . . . 1 048 576 x 36 TM248NBK36B . . . 2 097 152 x 36 Single 5-V Power Supply ±10% Tolerance
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TM124MBK36B,
TM124MBK36R1048576
36-BIT
TM248NBK36B,
TM248NBK36R
SMMS137E-JANUARY
TM124MBK36B
TM248NBK36B
72-pin
TMS44460DJ
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Untitled
Abstract: No abstract text available
Text: A 31 I File No. 561 zn: SHEET _L_ZL SPECIFICATION Current Rating: 5 Am p Withstanding Voltage: 1000V One Minute Insulation Resistance: 1000 M egaohm s Min. At DC 5 0 0 V Operation Temperature: — 5 0 ”C ~ + 1 0 5 "C Contact: B ra ss Insulator: P B T + 3 0 % Glass Fib e r(U L9 4 V -0 )
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UL94V-0)
15Pin
25Pin
37Pin
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2sk1203
Abstract: DA468
Text: • 2SK1203 4iHb2DS GG13245 TSb ■ H I T 4 HITACHI/ OPTOELECTRONICS blE ]> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • • Low On-Resistance High Speed Switching • Low Drive Current 1 .G ile 2 . D rain (Flan ge) 3 . S o u rce
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2SK1203
GG13245
SK1203
2sk1203
DA468
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A2137
Abstract: No abstract text available
Text: 2SK 1 0 8 8-M R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET • Outline Drawings ■ -eatures • h igh current • Law on-resistance • No secondary breakdown • L dw driving power • high forward Transconductance ■Applications • Motor controllers
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2SK1088-MR
EaT130
A2137
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A2305
Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
Text: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof
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2SK1969-01
SC-65
20Kil)
A2305
A2306
2SK1969-01
ZENNER A2
SC-65
2SK1969
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2SK2004-01
Abstract: 2SK2004-01L T151
Text: 2SK2004-01 L. S FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIASERIES • features Outline Drawings • H gh speed switching • Low on-resistance • N d secondary breakdown • Low driving power • H gh voltage • V ;s= + 30 V Guarantee
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2SK2004-01L.
Tc-25Â
2SK2004-01
2SK2004-01L
T151
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73100-0223
Abstract: PS735
Text: 13 12 10 M A T E R I A L S A N D F IN IS H E S BODY ZINC A L L O Y PLATED NICK EL BNC JACK IN T E R F A C E PER C E NT ER CONTACT PHOSPHOR BRONZE PLATED ES-73599-0000 GOLD IN S U L A T O R P O L Y P R O P Y L E N E 94- V-2 HOUSING V A L O X S O >E0 COLOR B L A C K
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ES-73599-0000
Y20-COLOR
C52100
PS-73598-0010
SD-73100-0223
73100-0223
PS735
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Untitled
Abstract: No abstract text available
Text: 2SK2019-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • =eatures • H g h speed switching 03.6±O.2 • L j w on-resistance *5*0.2 • l\o secondary breakdown • L dw driving power • I-igh voltage Gale
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2SK2019-01
O-220AB
54i0-2
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