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    DRO LNB Search Results

    DRO LNB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL9491ERZ Renesas Electronics Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications Visit Renesas Electronics Corporation
    ISL9491ERZ-T Renesas Electronics Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications Visit Renesas Electronics Corporation
    ISL9491AERZ Renesas Electronics Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications, QFN, /Tube Visit Renesas Electronics Corporation
    ISL9492ERZ-T Renesas Electronics Corporation Single Output LNB Supply and Control Voltage Regulator with I2C Interface for Satellite Set-Top Box Designs Visit Renesas Electronics Corporation
    ISL6421AERZ-T Renesas Electronics Corporation Single Output LNB Supply and Control Voltage Regulator with I2C Interface for Advanced Satellite Set-top Box Designs Visit Renesas Electronics Corporation

    DRO LNB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO PDF

    DRO lnb

    Abstract: CPR 229G Norsat CPR229G 229G 8000 Series lnb c-band Norsat International
    Text: Digital – PRO C-Band DRO LNB 8000 Series LNB With extensive proven reliability in the field, the 8000 series remains Norsat’ s premium quality digital C-Band DRO LNB. The 8000 Series is designed to provide commercial quality for VSAT and select digital applications such as:


    Original     		8000I: DRO lnb CPR 229G Norsat CPR229G 229G 8000 Series lnb c-band Norsat International PDF

    DRO lnb

    Abstract: NJR2184F NJR2154HW lnb ku dro 10 ghz NJR2184HW NJR2144F hemt lnb 8510 NJR2183F
    Text: Ku-band DRO Type Single LNB MODEL NO. NJR2144F / HW / HA MODEL NO. NJR2151AA / AB MODEL NO. NJR2154A / HW / HA MODEL NO. NJR2183F MODEL NO. NJR2184F / HW <Description> This specification defines the Low Noise Block downconverter LNB intended for the satellite data communication


    Original     		NJR2144F NJR2151AA NJR2154A NJR2183F NJR2184F NJR2184F NJR2184HW NJR2144F NJR2144HW DRO lnb NJR2154HW lnb ku dro 10 ghz NJR2184HW hemt lnb 8510 NJR2183F PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz


    Original     		BFP410 AEC-Q101 OT343 PDF

    SMS7621-006LF

    Abstract: No abstract text available
    Text: Low Noise Block LNB Part numbers link to product information Receiver Satellite “A” Downconverter Mixer LHP 22 kHz Burst or DC Level Shift Control Signal IF Amplifier A Decoder/Driver D Low Noise Amplifier E C F B DRO Local Oscillator To/From Set Top Box “A”


    Original     		SKY65013 SKY65014 SKY65015 SKY65016 SKY65017-70LF SMS7621-006LF PDF

    bfp410

    Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


    Original     		BFP410 OT343 bfp410 DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


    Original     		BFP410 OT343 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4500 Series: Temperature Stable Dielectric Resonators Features High ε' High Q ● Wide range of τ f ● High Q assemblies available ● ● Benefits Small size Repeatability of design ● Low insertion loss ● High stability DRO design ● Ease of compensation for temperature drift


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4300 Series: Temperature Stable Dielectric Resonators Features High ε' High Q ● Wide range of τ f ● High Q assemblies available ● ● Benefits Small size Repeatability of design ● Low insertion loss ● High stability DRO design ● Ease of compensation for temperature drift


    Original     		PDF

    samxon GS

    Abstract: No abstract text available
    Text: MEV KS R^kb^l Sbf^ Cbk\nbm Tl^.QU:q5/ FEASTQER 63 I]^Zeer lnbm^] _hk mbf^ \bk\nbml3 73 Eq\^ee^gm e^ZdZ`^ \nkk^gm lmZ[bebmr1 ^o^g ln[c^\m^] mh ehZ] hk gh ehZ] Zm ab`a m^fi^kZmnk^ _hk Z ehg` mbf^3 cQ]h_^ DD@V CBf cQ]h_^ CB@V GBf ROECIFICASINMR KS Im^f O^k_hkfZg\^ CaZkZ\m^kblmb\l


    Original     		O3657 samxon GS PDF

    Dielectric Resonator Oscillator DRO

    Abstract: microwave transceiver specification 10 GHz LNB-2640-40
    Text: MILLIMETER-WAVE BLOCK CONVERTERS A unique method has been developed for extending the frequency of existing 20 GHz broadband systems to cover the entire 26 to 40 GHz Ka-band without the need of a tuned front-end architecture. The models LNB-2640-40 and LNB-1826-30 low-noise block LNB


    Original     		LNB-2640-40 LNB-1826-30 26er-wave Dielectric Resonator Oscillator DRO microwave transceiver specification 10 GHz PDF

    NJR2184HW

    Abstract: DRO lnb NJR2184F NJR2154HW NJR2154A dro 10 ghz NJR2144HW NJR2144F NJR2144HA HA 1120
    Text: ＫｕバンドＤＲＯタイプ シングルＬＮＢ 製品番号 製品番号 製品番号 製品番号 製品番号 NJR2144F / HW / HA NJR2151AA / AB NJR2154A / HW / HA NJR2183F NJR2184F / HW <概要> 本製品はＫｕバンド帯で使用される衛星通信用ダウンコンバータであり、通信用ＶＳＡＴシステムの受信部及


    Original     		NJR2144F NJR2151AA NJR2154A NJR2183F NJR2184F NJR2184F NJR2184HW NJR2144F NJR2144HW NJR2184HW DRO lnb NJR2154HW dro 10 ghz NJR2144HW NJR2144HA HA 1120 PDF

    BFP410

    Abstract: AN235 C166 TRANSISTOR noise figure measurements TRANSISTOR noise figure measurements application
    Text: BF P4 1 0 In ve s ti g a t i o n o f P h a s e N o i s e i n K u Ba n d DR Os u s i n g BF P4 1 0 Ph a s e n o i s e p e rfo r ma n c e vs . c o l l e c to r c u rre n t Ap p l i c a ti o n N o te A N 2 3 5 Revision: Rev. 1.0 2010-08-11 RF a n d P r o te c ti o n D e vi c e s


    Original     		BFP410 BFP410 AN235, AN235 AN235 C166 TRANSISTOR noise figure measurements TRANSISTOR noise figure measurements application PDF

    UAF3000

    Abstract: 9.75 GHz oscillator LNB down converter for Ku band ku-band lnb satellite lnb ku UAF3000TS ku-band pll lnb transistor k 975 DRO lnb mixer lnb
    Text: NXP fully integrated down converter PLL synthesizer/ mixer/amplifier TFF1004HN for satellite LNB Create a Ku-band DVB-S LNB for less, with higher reliability The TFF1004HN is an integrated downconvertor for use in Low Noise Block (LNB) convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system. This alignment-free concept replaces


    Original     		TFF1004HN TFF1004HN BFU725F UAF3000 9.75 GHz oscillator LNB down converter for Ku band ku-band lnb satellite lnb ku UAF3000TS ku-band pll lnb transistor k 975 DRO lnb mixer lnb PDF

    NJR2803F

    Abstract: Ka-band
    Text: New Product Ka-band Low Noise Block Downconverter [Single] Model No. NJR2803F series < Features > * Various Frequency Line-up * Low Noise Figure & Excellent Input VSWR performance * High Stability Local Oscillator * Small Size < Features > Model No. Type A


    Original     		NJR2803F WR-42 110mm Rev00 NJR2803F Ka-band PDF

    temex ceramics

    Abstract: No abstract text available
    Text: DIELECTRIC RESONATORS Operating frequencies in wireless communications have shifted towards high frequency band, and thus frequencies higher than 1 GHz are now commonly utilized. In addition, the microwave frequency spectrum becoming severely crowded and sub-divided into many different frequency bands,


    Original     		10GHz E4000 E7000 temex ceramics PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    marking s20 SMD Transistor

    Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
    Text: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.


    Original     		BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power PDF

    lnb downconverter schematic diagram

    Abstract: RG6 coaxial cable parabolic antenna BFP540 MTA-100 RG6 coaxial J1 3007-1 parabolic dish circuit diagram BGA430 BGB540
    Text: Applications Note No. 074 Silicon Discretes A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs • Gain = 32 – 37 dB from 950 – 2150 MHz positive gain slope • Low Power Consumption: 40mA at +5.0 Volts


    Original     		BGA430 BGB540 BGA430 19-November-2002 24-July-2002 14-November-2002 15-November-2002 18-November-2002 lnb downconverter schematic diagram RG6 coaxial cable parabolic antenna BFP540 MTA-100 RG6 coaxial J1 3007-1 parabolic dish circuit diagram PDF

    philips rf manual

    Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H
    Text: RF 매뉴얼 6차 개정 RF 제품에 대한 애플리케이션 및 디자인 매뉴얼 2005년 5월 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 본 RF 매뉴얼은 RF 시스템에 대한 광범위한 각종 자료와 다양한 측면을 망라하였습니다. 본 문서에서는 RF 소 小 신호 개별 부품 (Small signal


    Original     		PDF

    ON5088

    Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		ON5088 OT343F JESD625-A ON5088 germanium NPN germanium transistors NPN SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power PDF

    Germanium power

    Abstract: No abstract text available
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		ON5088 OT343F JESD625-A Germanium power PDF

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power PDF

    transistor marking N1

    Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave PDF