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    DRO 10 GHZ Search Results

    DRO 10 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DC1591A Analog Devices LTC6409 - 10GHz, 1nV/rt(Hz) Di Visit Analog Devices Buy
    HMC802ALP3ETR Analog Devices DATT, 1BIT, 20dB, DC-10GHz Visit Analog Devices Buy
    HMC802ALP3E Analog Devices DATT, 1BIT, 20dB, DC-10GHz Visit Analog Devices Buy
    LTC5582HDD#TRPBF Analog Devices 40MHz to 10GHz RMS Pwr Detecto Visit Analog Devices Buy
    LTC6409CUDB#TRMPBF Analog Devices 10GHz GBW, 1.1nV/vHz Diff Amp/ Visit Analog Devices Buy

    DRO 10 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dro 10 ghz

    Abstract: No abstract text available
    Text: DRO Phase Lock Oscillators 0.5 to 18GHz The content of this specification may change without notification 10/01/09 Oscillators Coaxial DRO Phase Lock Oscillator 4 to 18GHz DRO Phase Lock Oscillator Freq. Power Phase Noise Range Output GHz (dBm) Fre q. @1


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    PDF 18GHz dro 10 ghz

    PN9255

    Abstract: PN9220-00 PN9000 pn9200 PN9230 PN9240 PN9250 PN9710 phase detector 10 khz crystal oscillator 42 MHz
    Text: Tommorrow’s Phase Noise Testing Today MICROWAVE OUTPUT PN9000 AUTOMATED PHASE NOISE MEASUREMENT SYSTEM DOWNCONVERTER SERIES MICROWAVE OSCILLATORS DUT INPUT 1.7 TO 18.5 GHZ DRO LOCKED -10 dBm Min TIME BASE REF LOCKED 10 MHz IN Fc TUNE PN9250 PN9255 PN9240


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    PDF PN9000 PN9250 PN9255 PN9240 PN9230 20dBm PN9220-00 PN9210-00 PN9250-00 PN9255 PN9220-00 pn9200 PN9230 PN9240 PN9250 PN9710 phase detector 10 khz crystal oscillator 42 MHz

    resonator B69500-A9107 siemens

    Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
    Text: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active


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    PDF BFP405 resonator B69500-A9107 siemens microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses

    FMCW Radar

    Abstract: fmcw FMCW Radar Module 77 ghz FMCW radar 77 ghz W-band W-BAND radar mmic FMCW circuit TLC Precision Wafer Technology 77 ghz FMCW radar
    Text: W-BAND LOWKa-Band NOISE MM-W AVEMixer SOURCE MODULE MMIC TLC-SM38/77 • 75 to 80 GHz • Output Power > 10 mW • Phase Noise - 90 dBc/Hz @ 100 kHz DESCRIPTION AND APPLICATIONS TLC’s Low Phase Noise W-Band Source Module utilizes TLC’s 38.5 GHz DRO -110 dBc/Hz and


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    PDF TLC-SM38/77 FMCW Radar fmcw FMCW Radar Module 77 ghz FMCW radar 77 ghz W-band W-BAND radar mmic FMCW circuit TLC Precision Wafer Technology 77 ghz FMCW radar

    dro 10 ghz

    Abstract: No abstract text available
    Text: 40 26.55 GHz VOLTAGE TUNED DRO O S C I L L AT O R S SPECIAL FEATURES • Low Phase Noise: - 85 dBc/Hz @ 10 kHz offset • Good Power Flatness: Less than ± 0.5 dB, typical • Wide Operating Temperature: - 35 to + 75 °C • Phase Locking Capability This Voltage Tuned Dielectric Resonator Oscillator


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    dro 10 ghz

    Abstract: Schematic diagram of DRO
    Text: HMC-C200 v05.0510 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier


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    PDF HMC-C200 HMC-C200 dro 10 ghz Schematic diagram of DRO

    Untitled

    Abstract: No abstract text available
    Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - Connectorized Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier


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    PDF HMC-C200 HMC-C200

    dielectric resonator oscillator

    Abstract: No abstract text available
    Text: HMC-C200 v00.0509 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -124 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier


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    PDF HMC-C200 HMC-C200 dielectric resonator oscillator

    Untitled

    Abstract: No abstract text available
    Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - COnneCtORizeD tuning Frequency: 8.0 - 8.3 GHz Low ssB Phase noise: -122 dBc/Hz @ 10 kHz Offset single Positive supply: +6 to +15V @ 116 mA internal Voltage Regulator internal Buffer Ampliier


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    PDF HMC-C200 HMC-C200

    Untitled

    Abstract: No abstract text available
    Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - Connectorized Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier


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    PDF HMC-C200 HMC-C200

    Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640

    Abstract: Dielectric Resonator Oscillator at 11.92GHz BFP640 dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
    Text: 11.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Description 3 Infineon’s BFP640 is a high-performance, low-cost Silicon-Germanium bipolar transistor housed in a 4-lead SOT-343 surface mount package. With a transition


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    PDF 92GHz BFP640 BFP640 OT-343 OT343 Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Dielectric Resonator Oscillator at 11.92GHz dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit

    Schematic diagram of DRO

    Abstract: Dielectric Resonator Oscillator DRO dielectric resonator oscillator HMC-C200 design dielectric resonator oscillator design DRO
    Text: HMC-C200 v04.1109 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier


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    PDF HMC-C200 HMC-C200 Schematic diagram of DRO Dielectric Resonator Oscillator DRO dielectric resonator oscillator design dielectric resonator oscillator design DRO

    Untitled

    Abstract: No abstract text available
    Text: HMC-C200 v03.1009 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier


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    PDF HMC-C200 HMC-C200

    Dielectric resonator oscillator

    Abstract: No abstract text available
    Text: HMC-C200 v00.0509 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Customizable Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -124 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier


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    PDF HMC-C200 HMC-C200 Dielectric resonator oscillator

    Untitled

    Abstract: No abstract text available
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


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    PDF CFY35 CFY35

    transistor s2p

    Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


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    PDF CFY35 CFY35 transistor s2p design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10

    x-band dro

    Abstract: Dielectric Resonator Oscillator DRO HMC-C200 HMC698LP5 hmc698 design DRO dielectric resonator oscillator radar sensor x-band accuracy X-band low noise amplifiers
    Text: HITTITE LAUNCHES INDUSTRY LEADING COMMERCIAL DRO PRODUCT LINE Miniature, High Stability Commercial DRO Module Offers Ultra Low Phase Noise O scillators are the fundamental element of microwave communication and sensor systems, from radar or optical telecom to test


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    PDF HMC-C200 HMC-C200 x-band dro Dielectric Resonator Oscillator DRO HMC698LP5 hmc698 design DRO dielectric resonator oscillator radar sensor x-band accuracy X-band low noise amplifiers

    crystal oscillator 12 Ghz

    Abstract: Dielectric Resonator Oscillator DRO remec oscillator
    Text: REMEC 3.0 to 21.0 GHz Dielectric Resonator Oscillator DRO MDR 5100 Series Phase Locked Internal Reference Specifications : (1) Frequency Range: (2) Mechanical Tuning Bandwidth (min.)(3) Stability (max.)(4) Pushing (max.) Harmonics (max.) Spurious (max.)


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    Untitled

    Abstract: No abstract text available
    Text: Sources K EY SPECIFICATIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­


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    PDF MIL-E-5400 MIL-E-16400

    Untitled

    Abstract: No abstract text available
    Text: K EY SPECIFICA TIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­ nent specifications are discussed below.


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    PDF MIL-E-5400 MIL-E-16400

    DIELECTRIC RESONATOR OSCILLATOR 8-18 GHZ

    Abstract: F5120 dro 10 ghz general microwave M5180 M5120
    Text: Catalog D K C jk Over the past decade, the DRO has become the oscillator of choice for fixed-frequency applications requiring high stabil­ ity and low phase noise. General Microwave offers a highperformance line of DROs in the 5-18 GHz frequency range featuring 1.5 ppm/°C frequency stability over a wide tempera


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    PDF F5080 M5080 F5120 M5120 F5180 M5180 DIELECTRIC RESONATOR OSCILLATOR 8-18 GHZ F5120 dro 10 ghz general microwave M5180 M5120

    HP5351B

    Abstract: HP8510A HP8514A HP8350B
    Text: CUSTOM PRODUCTS RESOMICS - DESIGN CONSIDERATIONS tfn I. DIMENSIONAL Material Diameter R U Dr x f0=57.8 Dr x fo=52.8 0.44 0.44 Lr/Dr Ratio NOTE 1: The value of Dr x fo is accurate under the following condition: a. Dr, Lr in m illim eter and fo in GHz. b. Resomics is positioned at the center of cavity and Do/Dr=Lo/Lr=3.


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    Untitled

    Abstract: No abstract text available
    Text: FOUR-CHANNEL DOWNCONVERTER MODEL: D C-04-04000800-01600260 FEATURES • • • • • • • • • • • • • • • High reliability spaceborne application RF input frequency. 4-8 GHz IF output frequency. 1.6-2.6 GHz


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    PDF C-04-04000800-01600260 MIL-STD-810B

    design DRO

    Abstract: Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro
    Text: FREQUENCY GENERATION SELECTION GUIDE MODEL NO. FREQUENCY INPUT OUTPUT MHz (MHz) CONVERSION LOSS (dB) TYP SPURIOUS F1 (dB) TYP REJECTION F3 (dB) TYP VSWR TYP CASE1 STYLE PAGE NO. 1.7:1 2.0:1 1.8:1 1.8:1 1.7:1 1.8:1 2.0:1 C-5 RH-3 C-5 C-5 FP-3 C-5 FP-2 467


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    PDF FM-102-4 FM-104 FM-106 DO-100 DO-120 DO-130 10KHz design DRO Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro