HD6417709A
Abstract: hd64f7044 GC80503CS166EXT GC80503CSM66266 pic16f877 sine pwm lcd interface with at89c2051 intel 80486dx4 80386extc HD6417707 HD6417020
Text: INDEX Subjects Products Suppliers Page 1. CPU & PERIPHERAL Embedded Processor Microcontroller CPU Peripherals DSP Voice Recognition Motorola / NS / Hitachi / Intel Atmel / Intel / Motorola / Hitachi / NS / Microchip NS / Intersil / Intel Motorola Sensory 2-10
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RSC-300
HD6417709A
hd64f7044
GC80503CS166EXT
GC80503CSM66266
pic16f877 sine pwm
lcd interface with at89c2051
intel 80486dx4
80386extc
HD6417707
HD6417020
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tms*1024
Abstract: TMS4C1024 MX802 HM51256-15 hm51256 DBS800 HM511000-15 MX802J MX802LH MX802LH8
Text: DATA BULLETIN MX802 DVSR CODEC Features Applications DVSR Data/Voice Storage and Retrieval Codec CVSD Codec Encoder and Decoder Control and Timing Circuitry for 4Mbits of external DRAM Low Power Operation Member of DBS800 Family (C-BUS Compatible)
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MX802
DBS800
24-pin
MX802LH
tms*1024
TMS4C1024
MX802
HM51256-15
hm51256
HM511000-15
MX802J
MX802LH
MX802LH8
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tpu3050
Abstract: teletext font
Text: PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040, TPU 3050 Teletext Processors MICRONAS Edition Feb. 23, 1999 6251-349-6PD TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 6
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6251-349-6PD
tpu3050
teletext font
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GLT5640L32
Abstract: GLT5640L32-5 G-Link
Text: G-LINK ADVANCED GLT5640L32 CMOS Synchronous DRAM 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM G-Link Technology Corporation G-Link Technology Corporation,Taiwan 6F, No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan. G-Link Technology Corporation
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GLT5640L32
32bit
2701Northwestern
400mil
GLT5640L32
GLT5640L32-5
G-Link
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GLT5640L32
Abstract: GLT5640L32-5
Text: G-LINK ADVANCED GLT5640L32 CMOS Synchronous DRAM 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM G-Link Technology Corporation G-Link Technology Corporation,TaiwanWeb : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-26599658 GLINK reserves the right to change products or specification without notice.
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GLT5640L32
32bit
400mil
GLT5640L32
GLT5640L32-5
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tpu3050
Abstract: micronas frc DSA003669
Text: PRELIMINARY DATA SHEET MICRONAS Edition Feb. 23, 1999 6251-349-6PD TPU 3035, TPU 3040, TPU 3050 Teletext Processors MICRONAS TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 6 6 7 8 8 8 9
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6251-349-6PD
tpu3050
micronas frc
DSA003669
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roadmap ISSI
Abstract: IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI
Text: Memory Based Solutions ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI_498 04/09/98 ® Integrated Silicon Solution, Inc. Memory Based Solutions ISSI Milestones • • • • • • • Incorporated - 1988 First Foundry Partnership TSMC - 1990
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IS22C020
IS22C040
IS22C041
IS22C042
IS82C600
roadmap ISSI
IS61C1024
IS61C64AH
IS61C64B
IS62C64
IS89C52
IS25M080A5T2R
IS80C32
flash memory 5v 16M-bit 48 TSOP
ISSI
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Triton P54C
Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Text: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195
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7C147
7C123
7C148
7C149
7C150
7C122
7C167A
7C168A
7C128A
7C187
Triton P54C
cy7c37128
62128 SRAM
adapter 48-pin TSOP
CY7C37192
CYM74P436
CY3501A
CY7C37512
MIB 30
Product Selector Guide
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GLT41016-30J4
Abstract: GLT41016 GLT41016-30TC GLT41016-35J4 GLT41016-35TC GLT41016-40J4 GLT41016-40TC GLT41016-45J4 GLT41016-45TC
Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev 2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has
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GLT41016
GLT41016
256-cycle
400mil
GLT41016-30J4
GLT41016-30TC
GLT41016-35J4
GLT41016-35TC
GLT41016-40J4
GLT41016-40TC
GLT41016-45J4
GLT41016-45TC
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cy3341
Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194
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7C147
7C123
7C148
7C149
7C150
7C189
7C190
7C122
7C167A
7C168A
cy3341
64K X 4 CACHE SRAM
CY7C190
pasic380
cy7c189
palce22v10 programming guide
palce16v8 programming algorithm
STATIC RAM 6264
vhdl code for 8-bit parity checker
64x18 synchronous sram
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7 segment display e1 3040
Abstract: rgb led 10X10 matrix rolling display using led matrix decoder buffer memory controller subframe DRAM micronas frc 65C02 intermetall D3000 PDIP40 PLCC44
Text: PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040 Teletext Processors MICRONAS Edition Dec. 9, 1996 6251-349-5PD TPU 3035, TPU 3040 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 7 7 8 8 8 9 9 9 2. 2.1.
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6251-349-5PD
7 segment display e1 3040
rgb led 10X10 matrix
rolling display using led matrix
decoder buffer memory controller subframe DRAM
micronas frc
65C02
intermetall
D3000
PDIP40
PLCC44
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040 Teletext Processors MICRONAS Edition Dec. 9, 1996 6251-349-5PD TPU 3035, TPU 3040 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 7 7 8 8 8 9 9 9 2. 2.1.
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GLT41016
Abstract: GLT41016-35J4 GLT41016-40J4
Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 1997 Rev 1 Features : Description : The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has
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GLT41016
GLT41016
256-cycle
400mil
2701Northwestern
GLT41016-35J4
GLT41016-40J4
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BL-70
Abstract: 514256B-80 514256B-70 514256BZ-70
Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BL/BJUBZL-60/-70 Advanced Information • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60
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514256B/BJ/BZ-60/-70/-80
514256BL/BJUBZL-60/-70
514256B/BL-60)
514256B/BL-70)
514256B-80)
BL-70
514256B-80
514256B-70
514256BZ-70
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siemens EM 235 cn
Abstract: No abstract text available
Text: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information VBB • 262 144 words by 4-bit organization • Single + 5 V ± 10 % supply with a built-in generator Output unlatched at cycle end allows two_
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514256B/BJ-50/-60/-70
514256BL/BJL-50/-60/-70
siemens EM 235 cn
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514256BZ-70
Abstract: 514256BJ-70 514256 CCC-13 514256b-70 514256b-60 BL6040
Text: SIE M E N S 256 K X 4 -B it D ynam ic RAM Low Pow er 256 K x 4-B it D ynam ic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BU B JL/BZL-60/-70 Advanced Information • • 262 144 words by 4-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 514256B/BL-60
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514256B/BJ/BZ-60/-70/-80
514256BUBJL/BZL-60/-70
514256B/BL-60)
514256B/BL-70)
514256B-80)
514256BZ-70
514256BJ-70
514256
CCC-13
514256b-70
514256b-60
BL6040
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DRAM 256 X 1, 18 PDIP
Abstract: 64K X 4 SRAM mmui
Text: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8
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AS7C164
AS7C256
AS7C259
AS7C512
AS7C1024
AS7C1028
AS7C3256
AS7C3512
AS7C31024
AS7C33232
DRAM 256 X 1, 18 PDIP
64K X 4 SRAM
mmui
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PDF
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HY53C464-70
Abstract: No abstract text available
Text: „v Hyundai < * HY53C464 S EM IC O N D U C TO R 1 1 M 1 2 1 2 0 1 A -A P R 9 1 DESCRIPTION FEATURES The HY53C464 is a high speed 65,536X4 bit CM OS dynamic random access memory. Fabricated with HYUNDAI CM OS techno logy, the HY53C464 offers a fast page mode
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HY53C464
HY53C464
536X4
HY53C464L)
HY53C464-70
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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Untitled
Abstract: No abstract text available
Text: 3 • ■ H y u n d a i SEMICONDUCTOR H 5 3 C Y 2 5 6 256K.X i-Kt c m o s d r a m M111201A-APR91 DESCRIPTION FEATURES The HY53C256 is a high speed 262,144X1 bit CM OS dynamic random access memory. Fabricated with HYUNDAI CM OS techno logy, the HY53C256 offers a fast page mode for
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M111201A-APR91
HY53C256
144X1
HY53C256L,
HY53C256L
100ns
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HY53C256-10
Abstract: HY53C256
Text: SIE I HY U N D A I E L E C T R O N I C S • 4 b7 5 0 6 ê 0 0 0 0 5 *4? 1 ST ■ HYNK :Y53C256 •HYUNDAI SEMICONDUCTOR 25 ik v 1-Hit ( MOS DK VM M111201B-JAN92 DESCRIPTION FEATURES The HY53C256 is a high speed 262,144X1 bit CM OS dynam ic random access memory.
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4b750Ã
M111201B-JAN92
HY53C256
144X1
HY53C256L,
HY53C256-10
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POWER COMMAND HM 1300
Abstract: RAS 0510
Text: M X* CDM, INC. MiXed Signal ICs DATA BULLETIN MX802 DVSR CODEC Features Applications • DVSR Data/Voice Storage and Retrieval Codec • Answering Machines where an incoming speech message is stored for later recall • CVSD Codec Encoder and Decoder •
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OCR Scan
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MX802
DBS800
24-pin
MX802LH
POWER COMMAND HM 1300
RAS 0510
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PDF
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Untitled
Abstract: No abstract text available
Text: TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATASHEET Contents 1 1 Page Section Title 4 1. Introduction 4 1.1. Features 6 2. Functional Description 6 2.1. Conceptional Overview 6 2.2. Teletext Acquisition 6 2.3. Teletext Page Management 7 2.4. Display Page Generation
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625-Line
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PDF
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ITT semiconductors
Abstract: bit-slice 02-E ITT Intermetall
Text: Edition Dec. 9,1996 6251-349-5PD ITT INTERMETALL Mbñ2711 GOObSOM 0 4ñ TPU 3035, TPU 3040 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 7 7 8 8 8 9 9 9 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. Functional Description
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6251-349-5PD
4b62711
000b57S
ITT semiconductors
bit-slice
02-E
ITT Intermetall
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PDF
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