TC5117440BSJ60
Abstract: TC5117440BSJ TC5117440BSJ/BST-70
Text: TOSHIBA TC5117440BSJ-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
|
OCR Scan
|
TC5117440BSJ-60/70
TC5117440BSJ
300mil)
tcAC15.
TC5117440BSJ60
TC5117440BSJ/BST-70
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117440BS J-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both
|
OCR Scan
|
TC5117440BS
J-60/70
TC5117440BSJ
TheTC5117440BSJ
300mil)
DR16090394
TDT7240
TC5117440BSJ-60/70
SOJ28-P-300B)
|
PDF
|