BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
|
OCR Scan
|
PDF
|
TC5116405BSJ/BST-60
TC5116405BSJ/BST
300mil)
DR16060295
SOJ26-P-300C)
BST60
|
BST60
Abstract: No abstract text available
Text: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
|
OCR Scan
|
PDF
|
TC5116405BSJ/BST60
16405BSJ/BST
16405B
TC5116405BSJ/BST
300mil)
TC5116405BS
J/BST-60
DR16060295
BST60
|
BST60
Abstract: No abstract text available
Text: T O S H I B A ^0^7240 OOHôBlS ÔÔ4 • - TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/
|
OCR Scan
|
PDF
|
TC5116405BSJ/BST-60
TC5116405BSJ/BST
TC5116405BSJ/
300mil)
DR16060295
i72Mfl
BST60
|