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Hirose Electric Co Ltd BNC-P-1.5DQSCR(40) CONN RF COAX PLUG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BNC-P-1.5DQSCR(40)	Bulk			20	1 - 10 - 100 $22.72 1000 $22.72 10000 $22.72	Buy Now
Mouser Electronics	BNC-P-1.5DQSCR(40)					1 $28.76 10 $25.19 100 $22.55 1000 $21.9 10000 $21.9	Get Quote
Newark	BNC-P-1.5DQSCR(40)	Bulk			20	1 $35 10 $35 100 $30.8 1000 $30.8 10000 $30.8	Buy Now
Sager	BNC-P-1.5DQSCR(40)				1	1 $29.2 10 $29.2 100 $23.3 1000 $21.9 10000 $21.9	Buy Now
Hirose Electric Co Ltd TNC-P-1.5DQSCR(40) CONN RF/COAXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TNC-P-1.5DQSCR(40)	Bag			20	1 - 10 - 100 $16.703 1000 $16.703 10000 $16.703	Buy Now
Mouser Electronics	TNC-P-1.5DQSCR(40)					1 $20.54 10 $17.99 100 $16.3 1000 $15.6 10000 $15.6	Get Quote
Newark	TNC-P-1.5DQSCR(40)	Bulk			20	1 $25 10 $25 100 $22 1000 $22 10000 $22	Buy Now
Sager	TNC-P-1.5DQSCR(40)				1	1 $20.8 10 $20.8 100 $17.9 1000 $15.6 10000 $15.6	Buy Now

DQSC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply	Original	AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA	PDF
Untitled Abstract: No abstract text available Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm	Original	AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG	PDF
NT5TU128M8DE Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6	Original	NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE	PDF
nt5tu128m8de-ac Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266	Original	NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG nt5tu128m8de-ac NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG	PDF
NT5TU32M16AG-37B Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8	Original	NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af	PDF
NT5TU32M16CG-BD Abstract: NT5TU32M16CG-be NT5TU64M8CE Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4	Original	NT5TU128M4CE NT5TU64M8CE /NT5TU32M16CG 512Mb NT5TU32M16CG-BD NT5TU32M16CG-be	PDF
Untitled Abstract: No abstract text available Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)	Original	V58C2128 DDR400 DDR333	PDF
MT47H128M8CF-25 Abstract: 8 resistor array 10k smd 103 Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration	Original	MT47H128M8 MT47H64M16 18-compatible) 8192-cycle 09005aef840eff89 MT47H128M8CF-25 8 resistor array 10k smd 103	PDF
DDR200 Abstract: DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66 Text: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR200 -7 -8 133 100 143 125 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted	Original	HYB25D256400/800AT 256-MBit DDR266A DDR200 DDR200 DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66	PDF
400B Abstract: DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5 Text: D a t a S he et , Rev. 1.3, J a n. 2 00 5 HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2005-01 Published by Infineon Technologies AG,	Original	HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit 09112003-SDM9-IQ3P 400B DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5	PDF
lfxp2-40e Abstract: LVCMOS25 LD48 LFXP2-17E-5FTN256C HB1004 ispLEVER project Navigator route place LFXP2-5E-5QN IPUG35 LFXP2-8E Text: LatticeXP2 Family Handbook HB1004 Version 02.9, May 2011 LatticeXP2 Family Handbook Table of Contents May 2011 Section I. LatticeXP2 Family Data Sheet Introduction Features . 1-1	Original	HB1004 TN1144 TN1220. TN1143 lfxp2-40e LVCMOS25 LD48 LFXP2-17E-5FTN256C ispLEVER project Navigator route place LFXP2-5E-5QN IPUG35 LFXP2-8E	PDF
NT5TU256T8DY Abstract: 128 MB DDR2 SDRAM DDR2-667 DDR2-800 NT5TU256T8DY-3C Text: NT5TU512T4DY / NT5TU256T8DY 2Gb DDR2 SDRAM DDP Features • Programmable Additive Latency: 0, 1, 2, 3 and 4 CAS Latency and Frequency Speed Sorts DDR2-667 DDR2-800 DDR2-800 (-3C) (-AC) (-AD) Bin • Write Latency = Read Latency -1 Units • Programmable Burst Length: 4 and 8	Original	NT5TU512T4DY NT5TU256T8DY DDR2-667 DDR2-800 DDR2-800 NT5TU256T8DY 128 MB DDR2 SDRAM NT5TU256T8DY-3C	PDF
NT5TU64M16 Abstract: NT5TU128M8BJ-3C NT5TU64M16BM nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks NT5TU256M4BJ Text: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400	Original	NT5TU256M4BJ NT5TU128M8BJ NT5TU64M16BM NT5TU64M16 NT5TU128M8BJ-3C nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte	Original	L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3-B	PDF

Untitled Abstract: No abstract text available Text: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm	Original	W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB	PDF
Untitled Abstract: No abstract text available Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration	Original	MT47H256M8 MT47H128M16 60-ball 84-ball DDR2-800) DDR2-667) 09005aef8441c566	PDF
Untitled Abstract: No abstract text available Text: 512MB, 1GB, 2GB: x72, SR 240-Pin DDR2 RDIMM Features DDR2 SDRAM Registered DIMM MT18HTF6472(P) – 512MB MT18HTF12872(P) – 1GB MT18HTF25672(P) – 2GB For component information or data sheets, please refer to the Micron Web site: www.micron.com/products/	Original	512MB, 240-Pin MT18HTF6472 512MB MT18HTF12872 MT18HTF25672 240-pin, PC2-3200, PC2-4200, PC2-5300	PDF
Untitled Abstract: No abstract text available Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)	Original	V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266	PDF
Untitled Abstract: No abstract text available Text: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)	Original	V58C2256 16Mbit DDR400 DDR333 DDR266	PDF
Untitled Abstract: No abstract text available Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)	Original	V58C2128 DDR400 DDR333	PDF
Untitled Abstract: No abstract text available Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)	Original	V58C2128 DDR400 DDR333 DDR266	PDF
Untitled Abstract: No abstract text available Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns	Original	V58C2128 DDR500 DDR400 DDR333	PDF
Untitled Abstract: No abstract text available Text: STI644004UD1-60VG 168-PIN DIMMS 4M X 64 Bit DRAM DIM M with EDO and without Buffers FEATURES • GENERAL DESCRIPTION Performance range: ^RAC I ^CAC 60ns 15ns I rC ^HPC 104ns 25ns The Simple Technology STI644004UD1-60VG is a 4M x 64 bit Dynamic RAM high density memory module. The Simple	OCR Scan	STI644004UD1-60VG 168-PIN 104ns STI644004UD1-60VG 24-pin 300-mil	PDF
Untitled Abstract: No abstract text available Text: HM5425161B Series HM5425801B Series HM5425401B Series 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword x 16-bit x 4-bank/8-Mword x 8-bit x 4-bank/ 16-Mword x 4 -bit x 4 -bank HITACHI ADE-203-1077 Z Preliminary Rev. 0.0 Jun. 28, 1999	OCR Scan	HM5425161B HM5425801B HM5425401B Hz/133 Hz/125 Hz/100 16-bit 16-Mword ADE-203-1077 HM5425161B,	PDF

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Hirose Electric Co Ltd BNC-P-1.5DQSCR(40)

Hirose Electric Co Ltd TNC-P-1.5DQSCR(40)

DQSC Datasheets Context Search

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NT5TU128M8DE

nt5tu128m8de-ac

NT5TU32M16AG-37B

NT5TU32M16CG-BD

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MT47H128M8CF-25

DDR200

400B

lfxp2-40e

NT5TU256T8DY

NT5TU64M16

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