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    DQ15 DISCRETE Search Results

    DQ15 DISCRETE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    DQ15 DISCRETE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DS1757Y PRODUCT PREVIEW DS1757Y 3V Partitionable 128K X 16 NV SRAM FEATURES PIN ASSIGNMENT • 2,097,152 bit static RAM organized as 131,072 words PFO 1 40 VCC CE 2 39 WE year minimum data retention in the absence of power DQ15 3 38 A16 DQ14 4 37 A15 • Selectively write protects blocks of memory through


    Original     		PDF DS1757Y DS1757Y 40-PIN

    HM5212165DTD-B60

    Abstract: HM5225165ATT-A6 HM5264165TT-B60 SH7708R SH7709a HM5264165-B60 SH7709 SH7729 HM5264165TTB60 HM5212165D-B60
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  3.3V or 5V Read Operation  Increased Programming Throughput


    Original     		PDF 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B x8/x16-Selectable 28F200 32-bit 28F002B 28F002/400BX-T/B 28F002/400BL-T/B AP-604

    intel 28F200

    Abstract: 56-Lead TSOP Package E28F200CVB60 e28f200cv-b60 29053 TB28F200BVT80
    Text: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology  5V or 12V Program/Erase  3.3V or 5V Read Operation  Increased Programming Throughput at 12V VPP


    Original     		PDF 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B BV-60 TBV80 BV-80 BV-120 BV-80, BV-60, intel 28F200 56-Lead TSOP Package E28F200CVB60 e28f200cv-b60 29053 TB28F200BVT80

    intel 28F400

    Abstract: No abstract text available
    Text: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n Intel SmartVoltage Technology  5 V or 12 V Program/Erase  3.3 V or 5 V Read Operation Very High-Performance Read


    Original     		PDF 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B x8/x16-Selectable 28F200 32-bit 28F002B 16-KB 96-KB 128-KB intel 28F400

    transistor c124 esn

    Abstract: transistor SA235 S71NS064NA0
    Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM


    Original     		PDF S71NS128NA0/S71NS064NA0 16-bit) S71NS128 064NA0 transistor c124 esn transistor SA235 S71NS064NA0

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 8Mx72 Synchronous DRAM WEDPN8M72V-133BC PRELIMINARY* FEATURES GENERAL DESCRIPTION n High Frequency = 133MHz, 125MHz and 100MHz n Package: The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728


    Original     		PDF 8Mx72 133MHz, 125MHz 100MHz WEDPN8M72V-133BC 64MByte 512Mb) 432-bit 133MHz

    mh2s64cxjj10

    Abstract: No abstract text available
    Text: Preliminary Spec. Some contents are subject to change without notice. MITSUBISHI LSIs MH2S64CXJJ-10,-12,-15 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH2S64CXJJ is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight


    Original     		PDF MH2S64CXJJ-10 134217728-BIT 2097152-WORD 64-BIT MH2S64CXJJ 64-bit 1Mx16 144-pin 72-pin mh2s64cxjj10

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz

    WEDPN

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz* 32MByte 256Mb) 216-bit 100MHz 125MHz WEDPN

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: DS1258V/AB DALLAS SEMICONDUCTOR DS1258Y/AB 128K x 16 Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU 1 1 CEL 1 2 DQ15 1 3 DQ14 1 4 • Data is automatically protected during a power loss • Separate upper byte and lower byte chip select inputs


    OCR Scan     		PDF DS1258V/AB DS1258Y/AB DS1258Y00: 40-pin 2bl413Q 0Qlb53S DS1258Y/AB 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1258Y/AB P R O D U C T P R EVIEW DALLAS DS1258Y/AB 128K x 16 Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU CEL DQ15 DQ14 1 1 1 1 DQ13 1 DQ12 • DQ11 1 • Data is automatically protected during a power loss


    OCR Scan     		PDF DS1258Y/AB DS1258Y) DS1258AB) DS125BY/AB DS1258Y/AB 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1656Y/AB DALLAS SEMICONDUCTOR DS1658Y/AB Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power 40 CËÜ 1 1 CËL 1 2 DQ15 1 3 DQ14 1 4 DQ13 1 5 • Data is automatically protected during power loss


    OCR Scan     		PDF DS1656Y/AB DS1658Y/AB 40-pin 2bl4130 D014051 DS1658Y/AB 40-PIN 001405E

    DS1258AB

    Abstract: DS1258Y
    Text: DS1258Y/A8 DALLAS SEMICONDUCTOR DS1258Y/AB 128K x 16 Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU 1 1 CEL 1 2 DQ15 1 3 DQ14 1 4 • Data is automatically protected during a power loss • Separate upper byte and lower byte chip select inputs


    OCR Scan     		PDF ds1258y/ab DS1258Y) DS1258AB) 40-pin DS1258Y/AB 40-PIN 2bl4130 DS1258AB DS1258Y

    DS1658AB

    Abstract: DS1658Y
    Text: DALLAS s e m ic o n d u c to r DS1658Y/AB Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power 40 CËÜ 1 1 CËL 1 2 DQ15 1 3 DQ14 1 4 DQ13 1 5 • Data is automatically protected during power loss


    OCR Scan     		PDF DS1658Y/AB DS1658Y) DS1658AB) 40-pin DS1658Y/AB 40-PIN Ebl413D DS1658AB DS1658Y

    Untitled

    Abstract: No abstract text available
    Text: DS1258Y/AB PRODUCT PREVIEW D A L L A S D S 1 2 5 8 Y /A B 128K x 16 Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 year minimum data retention in the absence of external power 1 1 CEL 1 2 40 1 Vcc 39 1 WE DQ15 1 3 DQ14 1 4 38 1 A16


    OCR Scan     		PDF DS1258Y/AB 40-pin 2bl4130 001353b DS1258Y/AB 40-PIN 2bl413D QD13537

    29053

    Abstract: intel pa28f800
    Text: jr% + I ra UJ©T [PF3EW0II 8-Mbit 512K X 1 6 ,1M X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at 12V VPP ■ Very High Performance Read


    OCR Scan     		PDF x8/x16-Selectable 28F800 32-bit 16-KB 96-KB 128-KB 28F800BV 28F008BV AB-57 AB-60 29053 intel pa28f800