Untitled
Abstract: No abstract text available
Text: DS1757Y PRODUCT PREVIEW DS1757Y 3V Partitionable 128K X 16 NV SRAM FEATURES PIN ASSIGNMENT • 2,097,152 bit static RAM organized as 131,072 words PFO 1 40 VCC CE 2 39 WE year minimum data retention in the absence of power DQ15 3 38 A16 DQ14 4 37 A15 • Selectively write protects blocks of memory through
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DS1757Y
DS1757Y
40-PIN
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HM5212165DTD-B60
Abstract: HM5225165ATT-A6 HM5264165TT-B60 SH7708R SH7709a HM5264165-B60 SH7709 SH7729 HM5264165TTB60 HM5212165D-B60
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n n n Intel SmartVoltage Technology 5V or 12V Program/Erase 3.3V or 5V Read Operation Increased Programming Throughput
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
x8/x16-Selectable
28F200
32-bit
28F002B
28F002/400BX-T/B
28F002/400BL-T/B
AP-604
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intel 28F200
Abstract: 56-Lead TSOP Package E28F200CVB60 e28f200cv-b60 29053 TB28F200BVT80
Text: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology 5V or 12V Program/Erase 3.3V or 5V Read Operation Increased Programming Throughput at 12V VPP
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
BV-60
TBV80
BV-80
BV-120
BV-80,
BV-60,
intel 28F200
56-Lead TSOP Package
E28F200CVB60
e28f200cv-b60
29053
TB28F200BVT80
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intel 28F400
Abstract: No abstract text available
Text: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n Intel SmartVoltage Technology 5 V or 12 V Program/Erase 3.3 V or 5 V Read Operation Very High-Performance Read
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
x8/x16-Selectable
28F200
32-bit
28F002B
16-KB
96-KB
128-KB
intel 28F400
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transistor c124 esn
Abstract: transistor SA235 S71NS064NA0
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
transistor c124 esn
transistor SA235
S71NS064NA0
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Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
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WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
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WEDPN8M72V-XBX
8Mx72
125MHz
64MByte
512Mb)
432-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs 8Mx72 Synchronous DRAM WEDPN8M72V-133BC PRELIMINARY* FEATURES GENERAL DESCRIPTION n High Frequency = 133MHz, 125MHz and 100MHz n Package: The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728
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8Mx72
133MHz,
125MHz
100MHz
WEDPN8M72V-133BC
64MByte
512Mb)
432-bit
133MHz
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mh2s64cxjj10
Abstract: No abstract text available
Text: Preliminary Spec. Some contents are subject to change without notice. MITSUBISHI LSIs MH2S64CXJJ-10,-12,-15 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH2S64CXJJ is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight
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MH2S64CXJJ-10
134217728-BIT
2097152-WORD
64-BIT
MH2S64CXJJ
64-bit
1Mx16
144-pin
72-pin
mh2s64cxjj10
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Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
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WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M72V-XBX
8Mx72
125MHz
64MByte
512Mb)
432-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
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WEDPN8M72V-XBX
8Mx72
125MHz
64MByte
512Mb)
432-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M72V-XBX
4Mx72
125MHz
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN16M72V-XBX
16Mx72
125MHz
128MByte
864-bit
100MHz
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WEDPN
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
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WEDPN4M72V-XBX
4Mx72
125MHz*
32MByte
256Mb)
216-bit
100MHz
125MHz
WEDPN
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M72V-XBX
8Mx72
125MHz
64MByte
512Mb)
432-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: DS1258V/AB DALLAS SEMICONDUCTOR DS1258Y/AB 128K x 16 Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU 1 1 CEL 1 2 DQ15 1 3 DQ14 1 4 • Data is automatically protected during a power loss • Separate upper byte and lower byte chip select inputs
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DS1258V/AB
DS1258Y/AB
DS1258Y00:
40-pin
2bl413Q
0Qlb53S
DS1258Y/AB
40-PIN
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Untitled
Abstract: No abstract text available
Text: DS1258Y/AB P R O D U C T P R EVIEW DALLAS DS1258Y/AB 128K x 16 Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU CEL DQ15 DQ14 1 1 1 1 DQ13 1 DQ12 • DQ11 1 • Data is automatically protected during a power loss
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DS1258Y/AB
DS1258Y)
DS1258AB)
DS125BY/AB
DS1258Y/AB
40-PIN
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Untitled
Abstract: No abstract text available
Text: DS1656Y/AB DALLAS SEMICONDUCTOR DS1658Y/AB Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power 40 CËÜ 1 1 CËL 1 2 DQ15 1 3 DQ14 1 4 DQ13 1 5 • Data is automatically protected during power loss
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DS1656Y/AB
DS1658Y/AB
40-pin
2bl4130
D014051
DS1658Y/AB
40-PIN
001405E
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DS1258AB
Abstract: DS1258Y
Text: DS1258Y/A8 DALLAS SEMICONDUCTOR DS1258Y/AB 128K x 16 Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU 1 1 CEL 1 2 DQ15 1 3 DQ14 1 4 • Data is automatically protected during a power loss • Separate upper byte and lower byte chip select inputs
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ds1258y/ab
DS1258Y)
DS1258AB)
40-pin
DS1258Y/AB
40-PIN
2bl4130
DS1258AB
DS1258Y
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DS1658AB
Abstract: DS1658Y
Text: DALLAS s e m ic o n d u c to r DS1658Y/AB Partitionable 128K x 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power 40 CËÜ 1 1 CËL 1 2 DQ15 1 3 DQ14 1 4 DQ13 1 5 • Data is automatically protected during power loss
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DS1658Y/AB
DS1658Y)
DS1658AB)
40-pin
DS1658Y/AB
40-PIN
Ebl413D
DS1658AB
DS1658Y
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Untitled
Abstract: No abstract text available
Text: DS1258Y/AB PRODUCT PREVIEW D A L L A S D S 1 2 5 8 Y /A B 128K x 16 Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 year minimum data retention in the absence of external power 1 1 CEL 1 2 40 1 Vcc 39 1 WE DQ15 1 3 DQ14 1 4 38 1 A16
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DS1258Y/AB
40-pin
2bl4130
001353b
DS1258Y/AB
40-PIN
2bl413D
QD13537
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29053
Abstract: intel pa28f800
Text: jr% + I ra UJ©T [PF3EW0II 8-Mbit 512K X 1 6 ,1M X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at 12V VPP ■ Very High Performance Read
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x8/x16-Selectable
28F800
32-bit
16-KB
96-KB
128-KB
28F800BV
28F008BV
AB-57
AB-60
29053
intel pa28f800
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