Untitled
Abstract: No abstract text available
Text: □PM DPS9264G Dense-Pac Microsystems, Inc. 8 KX8 CMOS SRAM MONOLITHIC LCC O D ESC R IP TIO N : The DPS9264G-90, -100, -120, -150 is a 8K X 8 Static Random Access Memory SRAM fabricated with a C M O S silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any
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DPS9264G
DPS9264G-90,
500mV
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Static Random Access Memory SRAM
Abstract: No abstract text available
Text: □P M DPS9264G Dense-Pac Microsystems. Inc. 8K X 8 CMOS SRAM MONOLITHIC LCC O DESCRIPTION: The DPS9264G-90, -100, -120, -150 is a 8K X 8 Static Random Access Memory SRAM fabricated with a CM O S silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any
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DPS9264G
DPS9264G-90,
150ns
32-Pad
A0-A12
Static Random Access Memory SRAM
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Untitled
Abstract: No abstract text available
Text: DPS9264G Dense-Pac Microsystems, Inc. ^ 8K X 8 CMOS SRAM MONOLITHIC LCC D E S C R IP T IO N : The DPS9264G-90, -100, -120, -150 is a 8K X 8 Static Random Access M em ory SRAM fabricated with a C M O S silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any
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DPS9264G
DPS9264G-90,
PS9264G
500mV
30A0134X)
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Untitled
Abstract: No abstract text available
Text: 7 Dense-Pac Microsystems, Inc. ^ PS9264G 8K X 8 CMOS SRA- MONOLITHIC LCC DESCRIPTION: The DPS9264G-90, -100, -120, -150 is a 8K X 8 Static Random Access Memory SRAM fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any
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PDF
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PS9264G
DPS9264G-90,
150ns
30A01340
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