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    DOUBLE INT-A-PAK PACKAGE Search Results

    DOUBLE INT-A-PAK PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    DOUBLE INT-A-PAK PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DOUBLE INT-A-PAK Package International Rectifier Case Outline and Dimensions Original PDF

    DOUBLE INT-A-PAK PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SEMICONDUCTORS www.vishay.com Modules Application Note Mounting Instructions for Double INT-A-PAK Modules Vishay Semiconductor Italiana This application note introduces Vishay´s Double INT-A-PAK DIAP modules. It covers their key features and gives instructions for using heatsinks with the modules.


    Original     		PDF 09-Jul-13

    ST T4 3560

    Abstract: T2 AL 250V 150Vt GA600HD25S
    Text: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package


    Original     		PDF GA600HD25S ST T4 3560 T2 AL 250V 150Vt GA600HD25S

    IGBT DRIVE 50V 300A

    Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
    Text: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package


    Original     		PDF -50071B GA600GD25S Collect52-7105 IGBT DRIVE 50V 300A LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak

    GA600GD25S

    Abstract: CGC SWITCH OF IGBT 1000A 1000V
    Text: PD - 50071A PRELIMINARY GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package


    Original     		PDF 0071A GA600GD25S GA600GD25S CGC SWITCH OF IGBT 1000A 1000V

    IRF 902

    Abstract: GA600GD25S LTA 902 RG2 DIODE 50071 555 ic IC 555 RT25
    Text: PD -50071 PRELIMINARY SINGLE SWITCH IGBT DOUBLE INT-A-PAK GA600GD25S StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package


    Original     		PDF GA600GD25S IRF 902 GA600GD25S LTA 902 RG2 DIODE 50071 555 ic IC 555 RT25

    GA400TD60U

    Abstract: No abstract text available
    Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    Original     		PDF GA400TD60U 25imeters GA400TD60U

    GA400TD25S

    Abstract: No abstract text available
    Text: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		PDF -50051C GA400TD25S 10kHz Colle52-7105 GA400TD25S

    1515G

    Abstract: GA250TD120U
    Text: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		PDF 0054A GA250TD120U 10kHz 1515G GA250TD120U

    GA250TD120U

    Abstract: ic 501
    Text: PD - 5.054 PRELIMINARY GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    Original     		PDF GA250TD120U 10kHz GA250TD120U ic 501

    Untitled

    Abstract: No abstract text available
    Text: Provisional Datasheet PD-9.1195 bitemational iôhRectifier IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc =300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses


    OCR Scan     		PDF IRGDDN300K06 IRGRDN300K06 C-1012

    C451

    Abstract: No abstract text available
    Text: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGDDN300M06 IRGRDN300M06 hiOutline13 C-452 C451

    IRGDDN400M06

    Abstract: c454 INTAPAK package mosfet 400a
    Text: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses


    OCR Scan     		PDF IRGDDN400M06 IRGRDN400M06 Outline13 C-454 GG2Q244 c454 INTAPAK package mosfet 400a

    IRGDDN600K06

    Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
    Text: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses


    OCR Scan     		PDF IRGDDN600K06 1RGRDN600K06 C-1016 mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e

    DOUBLE INT-A-PAK Package

    Abstract: No abstract text available
    Text: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"


    OCR Scan     		PDF DDN600M06 RDN600M06 Outline13 C-456 DOUBLE INT-A-PAK Package

    mosfet ir 840

    Abstract: irgddn400k06 OF IGBT 300A 500V 400A mosfet
    Text: International g ! Rectifier Provisional Data Sheet PD-9.1196 IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE = 600V lc = 400A • Rugged Design .Simple gate-drive •Switching-Loss Rating includes all "tail" losses


    OCR Scan     		PDF IRGDDN400K06 IRGRDN400K06 C-1014 mosfet ir 840 OF IGBT 300A 500V 400A mosfet

    C1019

    Abstract: 200a 300v mosfet
    Text: International [xôrIRectifier Provisional Data Sheet PD -9.1198 IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN200K06 C-1020 C1019 200a 300v mosfet

    transistors c458

    Abstract: btm 110 module C458
    Text: International khlRectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN150M06 S5452 GG2024fl C-458 transistors c458 btm 110 module C458

    TR C458

    Abstract: transistors c458 C458
    Text: International ^R ectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN150M06 C-458 TR C458 transistors c458 C458

    C82 diode

    Abstract: C81 diode
    Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz


    OCR Scan     		PDF 10kHz GA150TD120U 150TD C82 diode C81 diode

    OF IGBT 300A 500V

    Abstract: irgddn300m06 IGBT tail time C452 C451
    Text: International Rectifier Provisional Data Sheet PD-9.1174 RG N300M06 RG RDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT . Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail“ losses • Short circuit rated


    OCR Scan     		PDF N300M06 RDN300M06 Outline13 C-452 SS452 002DSME OF IGBT 300A 500V irgddn300m06 IGBT tail time C452 C451

    IRGDDN400M06

    Abstract: 400V 400A mosfet
    Text: International iël] Rectifier Provisional Data Sheet PD -9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK IRGDD. Low conduction loss IGBT IRGRD. VCE = 600V A • Rugged Design • Sim ple gate-drive •Sw itching-Loss Rating includes all “tail"


    OCR Scan     		PDF IRGDDN400M06 IRGRDN400M06 Outline13 400V 400A mosfet

    Untitled

    Abstract: No abstract text available
    Text: International l i i Rectifier PD-9.1171 IRGDDN300M12 IRGRDN300M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 300A • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated


    OCR Scan     		PDF IRGDDN300M12 IRGRDN300M12

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK PD'5051 G A 400TD 25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz


    OCR Scan     		PDF 400TD 10kHz

    200a 300v mosfet

    Abstract: No abstract text available
    Text: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN200K06 C-460 GD2025D 200a 300v mosfet