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    DO35 PACKAGE Search Results

    DO35 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    DO35 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DO35

    Abstract: No abstract text available
    Text: DO35 Vishay Semiconductors DO35 Cathode Identification 26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024] 1.7 [0.067] 1.5 [0.059] 0.55 max. [0.022] Package Dimensions in mm Inches Rev. 6 - Date: 29.January.2007 Document no.:6.560-5004.02-4 94 9366 Document Number 84001


    Original     		PDF 12-Feb-07 D-74025 DO35

    DO35

    Abstract: No abstract text available
    Text: DO35 Vishay Semiconductors DO35 Package Dimensions in mm Inches 3.9 max. (0.154) 26 min. (1.024) 1.5 (0.059) 26 min. (1.024) 1.7 (0.067) 0.55 max. (0.022) Cathode Identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 84001


    Original     		PDF 12-Feb-07 D-74025 DO35

    DIODE BZG 03c

    Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
    Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.


    Original     		PDF 1N4148 BZX55C. BZX85C. OT143 OT143R OT323 OT343 OT343R OT363 DIODE BZG 03c DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG

    1N47A

    Abstract: 1N52B
    Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.


    Original     		PDF 1N4148 BZX55C. BZX85C. BZT03C220 BZW03C27 DO214AC 1N47A 1N52B

    1N4148 DO35

    Abstract: 1N47A 1N52B 1N5 B 1N5 diode 55C 2v4 VISHAY MARKING BZG bzx55c v4148 SOD80
    Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.


    Original     		PDF 1N4148 BZX55C. BZX85C. BZT03C220 BZW03C27 DO214AC 1N4148 DO35 1N47A 1N52B 1N5 B 1N5 diode 55C 2v4 VISHAY MARKING BZG bzx55c v4148 SOD80

    NTE5010A

    Abstract: NTE5015A NTE5035A NTE5013A NTE5058A NTE5022A NTE5008A NTE5036A NTE5057A NTE5054A
    Text: NTE5000A thru NTE5060A Zener Diode, 1/2 Watt ±5% Tolerance Features: D Zener Voltage 2.4 to 200V D DO35 Package Maximum Ratings: Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C


    Original     		PDF NTE5000A NTE5060A 500mW 200mA) NTE5059A NTE5021A) NTE5022A NTE5060A) NTE5010A NTE5015A NTE5035A NTE5013A NTE5058A NTE5008A NTE5036A NTE5057A NTE5054A

    DO35

    Abstract: NTE112
    Text: NTE112 Silicon Small Signal Schottky Diode Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V


    Original     		PDF NTE112 NTE112 30MHz, DO35

    228DIA

    Abstract: NTE553 100MHZ DO35
    Text: NTE553 Schottky Barrier Diode Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: TA = +25°C unless otherwise specified Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35V


    Original     		PDF NTE553 NTE553 100mA 150mW 100MHZ 250MHZ 228DIA 100MHZ DO35

    NTE112

    Abstract: diode 1GHz DO35
    Text: NTE112 Silicon Small Signal Schottky Diode Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V


    Original     		PDF NTE112 NTE112 30MHz, diode 1GHz DO35

    SEM 2006

    Abstract: DO35 TC1N5221B TC1N5222B TC1N5223B TC1N5224B TC1N5225B TC1N5226B TC1N5227B TC1N5228B
    Text: TAK CHEONG SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature


    Original     		PDF DO-35 TC1N52xxT SEM 2006 DO35 TC1N5221B TC1N5222B TC1N5223B TC1N5224B TC1N5225B TC1N5226B TC1N5227B TC1N5228B

    SEM 2006

    Abstract: marking 33 zener diode DO35 TC1N746A TC1N747A TC1N748A TC1N749A TC1N750A TC1N751A TC1N752A
    Text: TAK CHEONG SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature


    Original     		PDF DO-35 SEM 2006 marking 33 zener diode DO35 TC1N746A TC1N747A TC1N748A TC1N749A TC1N750A TC1N751A TC1N752A

    fv1043

    Abstract: FV-1043 marking code diode DU marking code db3 100MHZ DO35 RS-296-D IC marking code D3 DB3-TR
    Text: TAK CHEONG 350 mW DO-35 Hermetically Sealed Glass AFC / Trigger Diodes Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ AXIAL LEAD DO35 Operating Junction Temperature DEVICE MARKING DIAGRAM


    Original     		PDF DO-35 FV1043 DO-35 250mm fv1043 FV-1043 marking code diode DU marking code db3 100MHZ DO35 RS-296-D IC marking code D3 DB3-TR

    TCZL2V4B

    Abstract: DO35 TCZL10B TCZL11B TCZL12B TCZL13B TCZL15B TCZL16B TCZL8V2B
    Text: TAK CHEONG SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature


    Original     		PDF DO-35 DB-100 TCZL2V4B DO35 TCZL10B TCZL11B TCZL12B TCZL13B TCZL15B TCZL16B TCZL8V2B

    Untitled

    Abstract: No abstract text available
    Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units


    Original     		PDF DO-35 DB-238 2013/B DO-35

    Untitled

    Abstract: No abstract text available
    Text: TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings Note 1 Rating Symbol Value


    Original     		PDF DO-35

    NTE584

    Abstract: DO35
    Text: NTE584 Silicon Schottky Diode Description: The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range.


    Original     		PDF NTE584 NTE584 100mA DO35

    MZ Series Zener

    Abstract: MZ4100 Zener 11v dip MZ4615 mz4623
    Text: TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings Note 1 Rating Symbol Value


    Original     		PDF DO-35 DO-204AH) MZ Series Zener MZ4100 Zener 11v dip MZ4615 mz4623

    Untitled

    Abstract: No abstract text available
    Text: TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings Note 1 Rating Symbol Value


    Original     		PDF DO-35 79Cxxx BZX79CxxxDevice DO-204AH) DB-100

    DO35

    Abstract: TC10V TC11V TC12V TC13V TC15V TC16V
    Text: SEMICONDUCTOR 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units DEVICE MARKING DIAGRAM


    Original     		PDF DO-35 DB-100 DO35 TC10V TC11V TC12V TC13V TC15V TC16V

    1N753A axial

    Abstract: 1n753a 1N4370A 1n752a zener 1n755A 1N748A 1n755a 1N4371A 1N4372A 1N747A
    Text: TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings Note 1 Rating Symbol Value


    Original     		PDF DO-35 43xxA 1N43xxA 1N753A axial 1n753a 1N4370A 1n752a zener 1n755A 1N748A 1n755a 1N4371A 1N4372A 1N747A

    1N5226B

    Abstract: 1N5281B DO-204AH DO35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1n5242b
    Text: TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings Note 1 Rating Symbol Value


    Original     		PDF DO-35 52xxB 1N52xxB 1N5226B 1N5281B DO-204AH DO35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1n5242b

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units DEVICE MARKING DIAGRAM


    Original     		PDF DO-35 DB-100

    1N5242B zener

    Abstract: No abstract text available
    Text: TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings Note 1 Rating Symbol Value


    Original     		PDF DO-35 52xxB 1N52xxB DO-204AH) 1N5221B 1N5242B) 1N5243B 1N5267B) DB-076 1N5242B zener

    79c15

    Abstract: 79C12 79C5v1 79c18 79C6v2 79C5V6 79c39 79c10 79C13 79C3V9
    Text: TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings Note 1 Rating Symbol Value


    Original     		PDF DO-35 79Cxxx BZX79CxxxDevice 79c15 79C12 79C5v1 79c18 79C6v2 79C5V6 79c39 79c10 79C13 79C3V9