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    Untitled

    Abstract: No abstract text available
    Text: High-Speed DIO PCI/PCIe-7200 12 MB/s High-Speed 32-CH DI & 32-CH DO Cards Introduction ADLINK’s PCI/PCIe-7200 are high-speed digital I/O cards consisting of 32 digital input channels, and 32 digital output channels. High-performance designs and the state-of-the-art technology make these cards suitable for high-speed


    Original     		PDF PCI/PCIe-7200 32-CH PCI/PCIe-7200 32-bit

    LC89057W-VF4-E

    Abstract: digital dts dolby 5.1 ic amplifier circuits dsp lsb modulation demodulation smoke detection using microcontroller A31CS LC89057W LC89057W-VF4 VCO 144mhz 7202-35 F1024
    Text: Ordering number : ENN∗7202 CMOS IC LC89057W-VF4-E Digital Audio Interface Transceiver Preliminary Overview 2 Package Dimensions unit: mm SQFP48 7x ×7 -3163B [LC89057W-VF4-E] 36 25 37 24 48 13 1 1 Features 12 (0.5) 0.15 (1.5) (0.75) 1.7max Realization of the full demodulation function as the


    Original     		PDF ENN7202 LC89057W-VF4-E SQFP48 -3163B LC89057W-VF4-E] 32kHz 192kHz 512fs, 256fs, 128fs, LC89057W-VF4-E digital dts dolby 5.1 ic amplifier circuits dsp lsb modulation demodulation smoke detection using microcontroller A31CS LC89057W LC89057W-VF4 VCO 144mhz 7202-35 F1024

    IEC61937

    Abstract: dsp lsb modulation demodulation RX6 40 Mhz CP-1201 DO15 WM8802 DI-41 249KHZ wm8802sc
    Text: WM8802 w Digital Audio Interface Transceiver DESCRIPTION FEATURES • The WM8802 is a digital audio interface transceiver conforming to IEC 60958/61937 and EIAJ CP-1201. The device supports data sampling input rates of up to 192 kHz. Data input to the serial digital audio data input pin can also


    Original     		PDF WM8802 WM8802 CP-1201. 32kHz 192kHz 128fs, 256fs, 384fs, 512fs. IEC61937 dsp lsb modulation demodulation RX6 40 Mhz CP-1201 DO15 DI-41 249KHZ wm8802sc

    S-4602A

    Abstract: DO40 la 1837 DO13 DO14 DO15 DO63 S-4602 UM80 DO44
    Text: S-4602A 64-bit THERMAL HEAD DRIVER The S-4602A is a CMOS thermal print head driver containing a 64-bit shift register and a latch. The 75 µm driver output pad pitch allows for high density mounting up to 300dpi. It can be used for general purpose because “H” or “L” can be selected for the latch and the driver


    Original     		PDF S-4602A 64-bit S-4602A 64-bit 300dpi. DO40 la 1837 DO13 DO14 DO15 DO63 S-4602 UM80 DO44

    AEN 6

    Abstract: DO13 DO14 DO15 DO63 S-4612A DO-37
    Text: Contents Features . 1 Block Diagram . 1 Operation. 2 Terminal Functions Refer to the dimensions


    Original     		PDF S-4612A 64-bit AEN 6 DO13 DO14 DO15 DO63 S-4612A DO-37

    TQFP128-P-1414-0

    Abstract: BUT30
    Text: OKI Semiconductor MS81V32321 PEDSMS81V32321-02 Issue Date: Mar. 22, 2005 Preliminary 1,114,112-Word x 32-Bit Field Memory GENERAL DESCRIPTION The OKI MS81V32321 is a high performance 32-Mbit, 1,100K × 32-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and


    Original     		PDF MS81V32321 PEDSMS81V32321-02 112-Word 32-Bit MS81V32321 32-Mbit, 32-bit, TQFP128-P-1414-0 BUT30

    LC89056W

    Abstract: LC89056 xmck 32kHz VCO DO52 3163B CP-1201 IEC60958 SQFP48 SQFP-48
    Text: Ordering number : EN*8226 CMOS IC LC890561W Digital Audio Interface Receiver with Built-in Data Buffer Memory Overview The LC890561W is an audio LSI that synchronizes with the input signal and demodulates the signal into the normal format signal during data transmission between digital audio devices via the IEC60958 and EIAJ CP-1201.


    Original     		PDF LC890561W LC890561W IEC60958 CP-1201. 192kHz. LC89056W No8226-47/47 LC89056 xmck 32kHz VCO DO52 3163B CP-1201 SQFP48 SQFP-48

    Untitled

    Abstract: No abstract text available
    Text: Embedded DRAM Cu-11 Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:


    Original     		PDF Cu-11 256-bit 292-bit 16-bit

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MS81V32321 PEDSMS81V32321-04 Issue Date: Feb. 24, 2006 Preliminary 1,114,112-Word x 32-Bit Field Memory GENERAL DESCRIPTION The OKI MS81V32321 is a high performance 32-Mbit, 1,100K × 32-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and


    Original     		PDF MS81V32321 PEDSMS81V32321-04 112-Word 32-Bit MS81V32321 32-Mbit, 32-bit,

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet SKR 50 a1275 MOS 6581 transistor NEC D 587 SI 356/2 diode nec d 882 p pwm Generator 2-423 NEC V30
    Text: Design Manual CB-9 Family VX/VM Type Core Library 0.35 µm CMOS Cell-Based IC CBIC CPU Core, Memory Controller 78K/0 Core V851TM Core V853TM Core V30MXTM V30MZTM NB85E NB85E901 NB85ET NB85E500 NU85E500 NU85E502 Document No. A13195EJ5V1DM00 (5th edition)


    Original     		PDF 78K/0 V851TM V853TM V30MXTM V30MZTM NB85E NB85E901 NB85ET NB85E500 NU85E500 transistor NEC D 882 p nec d 882 p datasheet SKR 50 a1275 MOS 6581 transistor NEC D 587 SI 356/2 diode nec d 882 p pwm Generator 2-423 NEC V30

    BW002

    Abstract: IBM "embedded dram" DRAM0512X8X256 554 CA3 embedded dram ibm 0.18 um CMOS parameters SA-27E DO255 BW255 DO000-DO291
    Text: Embedded DRAM SA-27E Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:


    Original     		PDF SA-27E 256-bit 292-bit 16-bit BW002 IBM "embedded dram" DRAM0512X8X256 554 CA3 embedded dram ibm 0.18 um CMOS parameters SA-27E DO255 BW255 DO000-DO291

    DO52

    Abstract: DO43 DO49 AEN 6 TRDO la 1837 seiko 64 s chip DO13 DO14 DO15
    Text: Contents Features. 1 Block Diagram. 1 Operation . 2 Terminal Functions. 2


    Original     		PDF S-4602A 64-bit S-4602A DO52 DO43 DO49 AEN 6 TRDO la 1837 seiko 64 s chip DO13 DO14 DO15

    ld33 st

    Abstract: st LD33 H7C4 ld33 3.3v h044 h1c4 data sheet ld33 c BIT3112 DO25 DO30
    Text: MDS112CG 10/100 Mbps Ethernet Distributed Switch 1 Features • • • • • • • • • • • DS5439 12 10/100 Mbps Autosensing, Fast Ethernet ports with reduced MII interface Full wire speed Layer 2 Switching Internal Switch Database Memory supports up


    Original     		PDF MDS112CG DS5439 32-bit 100Mhz DS112 ld33 st st LD33 H7C4 ld33 3.3v h044 h1c4 data sheet ld33 c BIT3112 DO25 DO30

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 4.5, 5,6, 7, 8 and 9ns Fast OE# access times: 4.5, 5 and 6ns


    OCR Scan     		PDF MT58LC32K32/36D8 MTS8LC32K32/36D8 Y38pm

    1N2222A

    Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
    Text: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244


    OCR Scan     		PDF oQoos11! DO-41case 1N3549 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N2222A 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    Untitled

    Abstract: No abstract text available
    Text: KMM5361000 DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5361000 is a 1M bits X 36 Dynamic RAM high density memory module. The Samsung KM M 5361000 consist of eight CMOS 1M X 4 bit DRAMs


    OCR Scan     		PDF KMM5361000 20-pin 72-pin 100ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE MH1 M32CDJ-5,-6,-7/ MH1 M32CNDJ-5,-6,-7 FAST PAGE MODE 33554432-BIT (1Û48576-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The M H 1M 32C D J/C N D J a 1048576-w ord bv 32-bit dynamic RAM and consists o f eight industry standard 1M x 4-bit


    OCR Scan     		PDF M32CDJ-5 M32CNDJ-5 33554432-BIT 48576-WORD 32-BIT) 1048576-w 32-bit MH1M32CDJ/CNDJ-5 MH1M32CDJ/CNDJ-6 MH1M32CDJ/CNDJ-7

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is <DRAM MODULE M H4M724CTJ-6,-7 FAST PAGE MODE 301989888-BIT 4194304-WORD BY 72-BIT) DYNAMIC RAM DESCRIPTION The M H 4M 724C TJ is 4 1 94304-w ord x 72-bit dynamic RAM module. This consists o f eighteen industry standard 4M x 4 dynamic RAMs in TSOP and tw o industry standard input


    OCR Scan     		PDF H4M724CTJ-6 301989888-BIT 4194304-WORD 72-BIT) 94304-w 72-bit MH4M724CTJ-6 MH4M724CTJ-7 D030715

    Untitled

    Abstract: No abstract text available
    Text: Contents Features. 1 Block Diagram. 1 Terminal


    OCR Scan     		PDF 64-bit S-4602A S-4602A

    1N3549

    Abstract: 1N2482 IN2071 1N553 INI128 1N2070 1N3247 1N3245 1N33 1n256
    Text: xemitran ffP IP P ftih v V P B M 5?E D • OOOOHT? fi semiconductors SemitronicsCorp. INTEX/ SEMITRONICS discrete devices CORP silicon rectifiers cont’d miniature axial lead silicon rectifiers DO-41 case style— t»m 1N3241 1N3242 1N3243 1N3244 1N3245 1N3246


    OCR Scan     		PDF DO-41 1N4383 1N4384 1N4585 1N4586 SES6A05 SES6A10 1N3549 1N2482 IN2071 1N553 INI128 1N2070 1N3247 1N3245 1N33 1n256

    KMM5361000

    Abstract: KMM5361000/A
    Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5361000 KMM5361000 bitsX36 20-pin 72-pin 150ns KMM5361000-10 KMM5361000- KMM5361000/A

    J-L0011

    Abstract: display counter block diagram 7 seg cc ELLS 110 T42LC wram
    Text: ADVANCE M IC R O N ^ MT42LC256K32A1 256K x 32 WRAM SCmMXOKK WRAM FEATURES PIN ASSIGNMENT Top View • Dual-port organization: 256K x 32 D RA M port 128 x 16 SAM port • Extended Data-Out operation (tPC=20ns) - 200 megabyte per second data burst rate on D RAM


    OCR Scan     		PDF MT42LC256K32A1 256-bit, 512-cycle K32A1 D1994. J-L0011 display counter block diagram 7 seg cc ELLS 110 T42LC wram