Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DO-203AB PACKAGE Search Results

    DO-203AB PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    DO-203AB PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DO-203AB Package International Rectifier Case Outline and Dimensions Original PDF

    DO-203AB PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N3209

    Abstract: No abstract text available
    Text: 1N3209 100V 15A Std. Recovery Diode In A DO-203AB DO-5 package 4.87 Diodes Si. Page 1 of 1 Enter Your Part # Home Part Number: 1N3209 Online Store 1N3209 Diodes 100V 15A Std. Recovery Diode In A DO-203AB (DO-5) Transistors package Integrated Circuits Optoelectronics


    Original     		PDF 1N3209 DO-203AB 1N3209 DO-203AB com/1n3209

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SEMICONDUCTORS www.vishay.com Rectifiers Application Note Mounting Instructions for DO-203AA / DO-203AB Diodes By Kevin Liu This application note introduces Vishay´s DO-203AA DO-4 and DO-203AB (DO-5) diodes and provides instructions for mounting them to a heat sink.


    Original     		PDF DO-203AA DO-203AB DO-203AA DO-203AB 30-Mar-15

    1N6097

    Abstract: No abstract text available
    Text: 1N6097 thru 1N6098R Naina Semiconductor Ltd. Schottky Power Diode, 50A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF 1N6097 1N6098R DO-203AB 1N6098

    MBR7545

    Abstract: No abstract text available
    Text: MBR7545 thru MBR75100R Naina Semiconductor Ltd. Schottky Power Diode, 75A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF MBR7545 MBR75100R DO-203AB MBR7560 MBR7580 MBR75100

    1N5832

    Abstract: No abstract text available
    Text: 1N5832 thru 1N5834R Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF 1N5832 1N5834R DO-203AB 1N5833 1N5834

    TO-208AA

    Abstract: DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1
    Text: 2015-2012:QuarkCatalogTempNew 9/20/12 5:44 PM Page 2015 25 Diodes, Thyristors and Insulated Gate Bipolar Transistors IGBT 80-90 Amp RoHS DO-203AB (DO-5) INT-A-Pak VFM @ 25°C VRRM @ TC (°C) Package EACH 70079025 70078671 70078674 70078774 70078771 70078775


    Original     		PDF DO-204AR O-247AC DO-203AB 80SQ045 80EPS12PBF TO-208AA DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1

    MBR6045

    Abstract: No abstract text available
    Text: MBR6045 thru MBR60100R Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF MBR6045 MBR60100R DO-203AB MBR6060 MBR6080 MBR60100

    1N5826

    Abstract: No abstract text available
    Text: 1N5826 thru 1N5828R Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF 1N5826 1N5828R DO-203AB 1N5827 1N5828

    MBR7520

    Abstract: No abstract text available
    Text: MBR7520 thru MBR7540R Naina Semiconductor Ltd. Schottky Power Diode, 75A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF MBR7520 MBR7540R DO-203AB MBR7530 MBR7535 MBR7540

    MBR8020

    Abstract: No abstract text available
    Text: MBR8020 thru MBR8040R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF MBR8020 MBR8040R DO-203AB MBR8030 MBR8035 MBR8040

    MBR8045

    Abstract: No abstract text available
    Text: MBR8045 thru MBR80100R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF MBR8045 MBR80100R DO-203AB MBR8060 MBR8080 MBR80100

    MBR6020

    Abstract: No abstract text available
    Text: MBR6020 thru MBR6040R Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)


    Original     		PDF MBR6020 MBR6040R DO-203AB MBR6030 MBR6035 MBR6040

    MUR7015

    Abstract: ms 0840
    Text: MUR7015 SILICON RECTIFIER-VERY FAST SWITCHING PACKAGE STYLE DO-5/D0-203AB DESCRIPTION: The MUR7015 is Designed for General Purpose Very Fast Switching Power Supply Applications. MAXIMUM RATINGS O 70 A AVG @ TC = 125 C IF 150 V VR O O O O TJ -55 C to +175 C


    Original     		PDF MUR7015 DO-5/D0-203AB MUR7015 ms 0840

    40HFL40S02

    Abstract: 95HQ015 DO-203AB IRFP460
    Text: Bulletin PD-2.272 rev. B 11/02 95HQ015 95 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Description/ Features Major Ratings and Characteristics Characteristics 95HQ015 Units IF(AV) Rectangular 95 A 15 V IFSM @ tp = 5 µs sine 7500 A VF @ 95 Apk, TJ = 75°C 0.39 V


    Original     		PDF 95HQ015 O-203AB 95HQ015 IRFP460 40HFL40S02 40HFL40S02 DO-203AB IRFP460

    ln2054

    Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 5 10 15 20 25 30 KG01420SX KG01421SX lN2789 KG01422SX OS35•08A OS35·02A OS35·04A 55HQ020 lN2128 lN2128A 50 50 50 50 51 52 52 60 60 60 ~~~~~~OSX ~g


    Original     		PDF KG01420SX KG01421SX lN2789 KG01422SX 55HQ020 lN2128 lN2128A lN2129 lN2129A 20MA10 ln2054 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20

    SSIE1420

    Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10


    Original     		PDF As-13 Press-13 Disc-10 203AB DO-21 SSIE1420 SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J

    DS35-02A

    Abstract: R4140260 EU555B SG63S SG63R SR60L2S SR60L ASEA Brown SR6004 sg-63s
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM IFSM Max A 00 (A) 00 IR IF VF @ Test (A) IR VR 25 °C @ Test (A) (V) T2 @ Test (A) (°C) T Oper Package Style Max (°C) General-Purpose, lo >= 50 A (Cont'd) 5 10 DS35-02A DS35-04A


    Original     		PDF DS35-02A DS35-04A D34/800C 1SM55 2SM55 EU555AP EU555AT EU555AW 4SM55 EU555BP R4140260 EU555B SG63S SG63R SR60L2S SR60L ASEA Brown SR6004 sg-63s

    VSK51

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ SbE D MICRO / • bllS'iO? 000142S 3^1 MICRO QUALITY / 60 Amp Schottky VSK51 i h úl T=02>-Z1 SEMICONDUCTOR. INC 150X Max Tj 45 Volts VRRM .60 Volts VF @ lF = 60 Amps @ 125°C. Very Fast Switching Speed Standard DO-5 Stud Mount Case JEDEC Package 203AB formerly DO-5


    OCR Scan     		PDF 000142S VSK51 203AB VSK51

    Untitled

    Abstract: No abstract text available
    Text: MICRO QUALITY / SE M ICO ND UC TO R , INC. 50 Amp Epitaxial High Efficiency Rectifiers Low Thermal Resistance Extremely Low Leakage at High Temperature High Surge Capability Very Fast Switching Speeds Glass Passivated Standard D05 Case JEDEC Package 203AB fo rm e rly DO-5


    OCR Scan     		PDF 203AB VHE805 VHE806 VHE807 VHE808 VHE805 VHE806 VHE808

    diode A28

    Abstract: ma 7050 G952
    Text: MICRO QUALITY / SEMICONDUCTOR. INC 70 Amp HV Schottky Rectifier 50, 60, 80, & 100 Volt VRRM 0.86 Volts at lF = 70 Amps Low Leakage at High Temperature High Surge Capability D 0 5 Package DIM. A 6 C D E F G JEDEC Package 203AB formerly DO-5 MILLIMETERS INCHES


    OCR Scan     		PDF 203AB 150-C ESST1VE10AS diode A28 ma 7050 G952

    Untitled

    Abstract: No abstract text available
    Text: M IC R O Q U A L IT Y / SEM IC O N D U C TO R . INC. 70 Am p HV S chottky Rectifier 50, 60, 80, & 100 Volt VRRM 0.86 Volts at lF = 70 Amps Low Leakage at High Temperature High Surge Capability D05 Package JEOEC Package 203AB fo rm e rly DO-5 DIM. A B C D


    OCR Scan     		PDF 203AB Vi-28

    VSK71

    Abstract: No abstract text available
    Text: MICRO QUALITY / 75 Amp Schottky v s k 71, v s k 72 SE M ICO ND UC TO R , INC. 175 c m ax Ta 50 Volts and 60 Volts VRRM 175°C Junction Operating Temperature Lowest lR in the Industry Exceptional dv/dt: 2000 V /^s D05 Package JEDEC Package 203AB fo rm e rly DO-5 _


    OCR Scan     		PDF 203AB Vi-28 VSK71 VSK72

    J1587

    Abstract: 20331 2N150
    Text: International Schottky Diodes lö R Rectifier VFM @ lFM Part Number VRRM V 1FAV @ TC (A) (C) 25°C (mA) Um @ eAS Ur H ) (A) Fax on Demand Number vrwm 2S°C (mA) Max Tj (°C) Notes Case Outline Key Through-Hole Packages 30 25 105 0.8ft 40 6 250 125 -> 7 14


    OCR Scan     		PDF D0-203AA 1N6095 1N6096 20FQ035 30FQ035 21FQ035 30FQ040 20FQ040 21FQ040 20FQ045 J1587 20331 2N150

    MHT10P10

    Abstract: SM 8002 C NS 8002 1151
    Text: MOTOROLA SC XSTRS/R F 4bE D fe.3t.7254 00*12474 b • MOTb MOTOROLA SEM IC O N D U C TO R i TECHNICAL DATA M H T10P10 Discrete Military Products Suffixes: HX, HXV P o w e r Field-Effect T ra n sisto r Processed per MIL-S-19500/547 P-Channel Enhancement-Mode


    OCR Scan     		PDF T10P10 MIL-S-19500/547 O-116) MHT10P10 SM 8002 C NS 8002 1151