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    DN 819 Price and Stock

    Kyocera AVX Components 9000046-XLPDNB

    Antennas ISM 868/960MHz Exter nal Whip Black SMA C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 9000046-XLPDNB 2,214
    • 1 $6.28
    • 10 $3.7
    • 100 $3.22
    • 1000 $2.52
    • 10000 $2.5
    		Buy Now

    Texas Instruments LM4819LD/NOPB

    Audio Amplifiers 350-mW, mono, analog input Class-AB audio amplifier & VSSOP package 8-WSON -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LM4819LD/NOPB 1,002
    • 1 $1.48
    • 10 $0.797
    • 100 $0.551
    • 1000 $0.416
    • 10000 $0.347
    		Buy Now

    Traco Power TDN 3-4819WISM

    Isolated DC/DC Converters - SMD 18-75Vin 9Vout 333mA 3W Iso Reg SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TDN 3-4819WISM 32
    • 1 $24.83
    • 10 $23.54
    • 100 $21.22
    • 1000 $20.91
    • 10000 $20.91
    		Buy Now

    Traco Power TDN 1-4819WISM

    Isolated DC/DC Converters - SMD 18-75Vin 9Vout 112mA 1W Iso Reg SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TDN 1-4819WISM 10
    • 1 $18.73
    • 10 $18.43
    • 100 $16.41
    • 1000 $15.92
    • 10000 $15.92
    		Buy Now

    Traco Power TDN 3-4819WI

    Isolated DC/DC Converters - Through Hole 18-75Vin 9Vout 333mA 3W Iso Reg DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TDN 3-4819WI
    • 1 $22.4
    • 10 $22.05
    • 100 $20.46
    • 1000 $19.8
    • 10000 $19.8
    		Get Quote
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    DN 819 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DN819 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    DN819 Panasonic I2L Frequency Divider Scan PDF

    DN 819 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAF7730HV

    Abstract: BB 509 varicap diode CP3236D TDA8841 phx4nq60e PHX10NQ60E SAA4849PS Philips SAF7730HV om8839ps saf7730hv 331
    Text: PHILIPS SEMICONDUCTORS DN 54 December 31, 2004 SEE DN54 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF

    Philips tea1090

    Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS


    Original     		PDF DN-41 LO9585/WD LO9585 LO9700 OQ8845T/K3 OQ8868HP/K6 QFP47) X2G-BUK5R3-100B Philips tea1090 tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    Z 151 VARISTOR

    Abstract: DIN 43650 c DIN 43650 DIN 43650 form c K134 DIN 43650 form a 6012 aluminium 008408Q
    Text: 3/2-Wege-Mini-Magnetventil Typ 6012 Direktwirkend; 0 bis 10 bar; DN 1,2 und 1,6 mm; M5, G 1/8 und Flansch TECHNISCHE DATEN Gehäusewerkstoff Messing, Polyamid PA, Edelstahl 1.4305 Dichtwerkstoff FPM Medien neutrale Gase und Flüssigkeiten, wie z. B. Druckluft,


    Original     		PDF 09/99-V1/890530 Z 151 VARISTOR DIN 43650 c DIN 43650 DIN 43650 form c K134 DIN 43650 form a 6012 aluminium 008408Q

    tda8841 s1

    Abstract: saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1
    Text: Philips Semiconductors December 31, 2004 Attention: Materials Manager, Purchasing Manager and Philips' Products Manager Subject: Philips Semiconductors' Product Discontinuation Notice Number DN-54 Dear Philips Semiconductors Customer or Distributor: This letter confirms to your company that Philips Semiconductors is discontinuing the manufacture of a number of its'


    Original     		PDF DN-54 tda8841 s1 saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1

    9SMnPb28k

    Abstract: 6012 aluminium oil and gas valves DIN 43650 form c water solenoid valve gas solenoid valve hydraulic solenoid valve 008409R
    Text: Miniature Solenoid Valve - General Purpose Type 6012 Sub-base Connection 3/2-Way; sub-base connection; DN 1,2-1,6; 0-10 bar Advantages/Benefits Coil can be changed easily with valve in place Coil can be locked in 4x 90 o positions or move freely between, as required


    Original     		PDF 710-GB/ 9SMnPb28k 6012 aluminium oil and gas valves DIN 43650 form c water solenoid valve gas solenoid valve hydraulic solenoid valve 008409R

    9SMnPb28k

    Abstract: water solenoid valve 6012 aluminium
    Text: Miniature Solenoid Valve - General Purpose Type 6011 Sub-base Connection 2/2-Way; sub-base connection; DN 1,2-2,4; 0-21 bar Advantages/Benefits Coil can be changed easily with valve in place Coil can be locked in 4x 90 o positions or move freely between, as required


    Original     		PDF 710-GB/ 9SMnPb28k water solenoid valve 6012 aluminium

    M66259FP

    Abstract: No abstract text available
    Text: MITSUBISHI <DIGITAL ASSP> M66259FP 8192 x 8-BIT x 2 LINE MEMORY DESCRIPTION PIN CONFIGURATION TOP VIEW The M66259 is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 8192 words x 8 bits x 2.


    Original     		PDF M66259FP M66259 M66259FP

    M66282FP

    Abstract: No abstract text available
    Text: MITSUBISHI <DIGITAL ASSP> M66282FP 8192 x 8-BIT LINE MEMORY DESCRIPTION The M66282FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words x 8 bits.


    Original     		PDF M66282FP M66282FP M66282FP, M66282

    0D96

    Abstract: 28P2W-C M66255FP photocopiers Nk d9
    Text: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66255FP M66255FP 8192 x 10-BIT LINE MEMORY FIFO 8192 × 10-BIT LINE MEMORY (FIFO) DESCRIPTION The M66255FP is a high-speed line memory with a FIFO (First In First Out) structure of 8192-word × 10-bit configuration which uses high-performance silicon gate CMOS process technology.


    Original     		PDF M66255FP 10-BIT M66255FP 8192-word 0D96 28P2W-C photocopiers Nk d9

    m66258fp

    Abstract: M66258
    Text: MITSUBISHI <DIGITAL ASSP> M66258FP 8192 x 8-BIT LINE MEMORY DESCRIPTION The M66258FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words x 8 bits.


    Original     		PDF M66258FP M66258FP M66258FP, M66258 M66258

    28P2W-C

    Abstract: M66255FP PRSP0028DB-B
    Text: M66255FP 8192 x 10-Bit Line Memory FIFO REJ03F0249-0200 Rev.2.00 Sep 14, 2007 Description The M66255FP is a high-speed line memory with a FIFO (First In First Out) structure of 8192-word × 10-bit configuration which uses high-performance silicon gate CMOS process technology.


    Original     		PDF M66255FP 10-Bit REJ03F0249-0200 M66255FP 8192-word 10-bit 28P2W-C PRSP0028DB-B

    M66282FP

    Abstract: PRSP0024GA-A
    Text: M66282FP 8192 x 8-Bit Line Memory REJ03F0255-0200 Rev.2.00 Sep 14, 2007 Description The M66282FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words × 8 bits.


    Original     		PDF M66282FP REJ03F0255-0200 M66282FP M66282FP, PRSP0024GA-A

    M66258

    Abstract: M66258FP
    Text: M66258FP 8192 x 8-Bit Line Memory REJ03F0252-0200 Rev.2.00 Sep 14, 2007 Description The M66258FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words × 8 bits.


    Original     		PDF M66258FP REJ03F0252-0200 M66258FP M66258FP, M66258

    Untitled

    Abstract: No abstract text available
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


    Original     		PDF SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695A SN74V263 SN74V273 SN74V283 SN74V293 133-MHz

    Untitled

    Abstract: No abstract text available
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


    Original     		PDF SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695A SN74V263 SN74V273 SN74V283 SN74V293 133-MHz

    Untitled

    Abstract: No abstract text available
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


    Original     		PDF SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695A SN74V263 SN74V273 SN74V283 SN74V293 133-MHz

    Untitled

    Abstract: No abstract text available
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


    Original     		PDF SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695A SN74V263 SN74V273 SN74V283 SN74V293 133-MHz

    SN74V3640

    Abstract: SN74V3640-6 SN74V3650 SN74V3650-6 SN74V3660 SN74V3660-6 SN74V3670 SN74V3680 SN74V3690
    Text: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations


    Original     		PDF SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 SCAS668A SN74V3640 SN74V3650 SN74V3660 SN74V3640 SN74V3640-6 SN74V3650 SN74V3650-6 SN74V3660 SN74V3660-6 SN74V3670 SN74V3680 SN74V3690

    Untitled

    Abstract: No abstract text available
    Text: SN74V263, SN74V273, SN74V283, SN74V293 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS669D – JUNE 2001 – REVISED FEBRUARY 2003 D D D D D D D D D D D Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9


    Original     		PDF SN74V263, SN74V273, SN74V283, SN74V293 SCAS669D SN74V263 SN74V273 SN74V283 SN74V293 166-MHz

    Untitled

    Abstract: No abstract text available
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


    Original     		PDF SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695A SN74V263 SN74V273 SN74V283 SN74V293 133-MHz

    Untitled

    Abstract: No abstract text available
    Text: SN74V263, SN74V273, SN74V283, SN74V293 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS669D – JUNE 2001 – REVISED FEBRUARY 2003 D D D D D D D D D D D Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9


    Original     		PDF SN74V263, SN74V273, SN74V283, SN74V293 SCAS669D SN74V263 SN74V273 SN74V283 SN74V293 166-MHz

    Untitled

    Abstract: No abstract text available
    Text: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication


    Original     		PDF SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP SCAS695A SN74V263 SN74V273 SN74V283 SN74V293 133-MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DIGITAL ASSP M66255FP 8192 x 10-BIT LINE MEMORY (FIFO) DESCRIPTION The M66255FP is a high-speed line m em ory with a FIFO (First In First Out) structure of 8192-word x 10-bit configura­ tion which uses high-perform ance silicon gate CMOS pro­


    OCR Scan     		PDF M66255FP 10-BIT M66255FP 8192-word