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    DMN65D8L Price and Stock

    Diodes Incorporated DMN65D8LFB-7B

    MOSFET N-CH 60V 260MA 3DFN
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    Diodes Incorporated DMN65D8L-7

    MOSFET N-CH 60V 310MA SOT23
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    Diodes Incorporated DMN65D8LW-7

    MOSFET N-CH 60V 300MA SOT323
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    Diodes Incorporated DMN65D8LQ-7

    MOSFET N-CH 60V 310MA SOT23
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    Diodes Incorporated DMN65D8LFB-7

    MOSFET N-CH 60V 260MA 3DFN
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    DigiKey DMN65D8LFB-7 Reel 18,000 3,000
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    Find more DMN65D8L price and stock on Findchips.com

    DMN65D8L Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DMN65D8L Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN65D8L-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 310MA SOT23 Original PDF
    DMN65D8LDW Diodes DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN65D8LDW-7 Diodes FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 180MA SOT363 Original PDF
    DMN65D8LFB Diodes N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Original PDF
    DMN65D8LFB-7 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 260MA 3DFN Original PDF
    DMN65D8LFB-7B Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 260MA 3DFN Original PDF
    DMN65D8LQ-13 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V SOT23 Original PDF
    DMN65D8LQ-7 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V SOT23 Original PDF
    DMN65D8LW Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN65D8LW-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N CH 60V 300MA SOT323 Original PDF

    DMN65D8L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMN65D8LDW

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 8Ω @ VGS = 5V 170mA 6Ω @ VGS = 10V 200mA V(BR)DSS • • • • • • • • • • 60V • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN65D8LDW 200mA 170mA AEC-Q101 DS35500 DMN65D8LDW

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LDW 170mA OT363 200mA DS35500

    n channel mosfet vds max 60v, id max 260ma

    Abstract: No abstract text available
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN65D8LW OT323 260mA 300mA AEC-Q101 DS35639 n channel mosfet vds max 60v, id max 260ma

    DMN65D8L-7

    Abstract: No abstract text available
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7

    DMN65D8L-7

    Abstract: dmn65d8l
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 dmn65d8l

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LDW OT363 170mA 200mA AEC-Q101 DS35500

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • N EW PRODU CT 60V Description and Applications


    Original     		PDF DMN65D8LFB 400mA 330mA DS35449

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V BR DSS Features and Benefits ID TA = 25°C RDS(ON) 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA NEW PRODUCT 60V • N-Channel MOSFET • Low On-Resistance • Low Gate-Threshold Voltage


    Original     		PDF DMN65D8LFB 330mA 400mA AEC-Q101 DS35545

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LW 260mA 300mA AEC-Q101 DS35639

    DMN65D

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • NEW PRODUCT 60V Description and Applications These N-Channel enhancement mode field effect transistors are


    Original     		PDF DMN65D8LFB 330mA 400mA AEC-Q101 DS35449 DMN65D

    DMN65D

    Abstract: DMN65D8LDW DMN65D8LDW-7
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LDW OT363 170mA 200mA AEC-Q101 DS35500 DMN65D DMN65D8LDW DMN65D8LDW-7

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN65D8LDW OT363 170mA 200mA DS35500

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V •          ID TA = +25°C 170mA SOT363 200mA Description This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LDW 170mA OT363 200mA DS35500

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LW 260mA AEC-Q101 DS35639

    DMN65D8LDW

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 8Ω @ VGS = 5V 170mA 6Ω @ VGS = 10V 200mA V(BR)DSS • • • • • • • • • • 60V • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN65D8LDW 200mA 170mA AEC-Q101 DS35500 DMN65D8LDW

    DMN65D

    Abstract: n channel mosfet vds max 60v, id max 260ma
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LW 260mA 300mA AEC-Q101 DS35639 DMN65D n channel mosfet vds max 60v, id max 260ma

    2N7002TAX-7

    Abstract: 2N7002TA 2N7002KX-7
    Text: DATE: 24th November, 2014 PCN #: 2165 REV 01 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.


    Original     		PDF MBR1045 MBR2035CT MBR6040PT SBL1635PT SBL6060PT MBR1050 MBR2535CT MBR6045PT SBL2045CT 2N7002TA 2N7002TAX-7 2N7002TA 2N7002KX-7

    SBR20Q100CTP

    Abstract: DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB
    Text: DATE: 8 August, 2012 PCN #: 2084 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF DMC3018LSD-13 DMG4932LSD-13 DMN3031LSS-13 DMN3033LSD-13 DMP3056LDM-7 DMP3056LSS-13 DMC3021LK4-13 DMN3030LSS-13 DMN3033LDM-7 DMN3033LSN-7 SBR20Q100CTP DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB

    DMN62D4SDW-7

    Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
    Text: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,


    Original     		PDF Rev01 OT-23, OT223, OT-323, OT-363, SSOT-23, OD-323 PCN-2061 PCN-2070. OD-323 DMN62D4SDW-7 ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N

    DMN63D8L

    Abstract: No abstract text available
    Text: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at


    Original     		PDF 1N4448Wâ BZT52C2V4â BZT52C51â BZT52C13â BZT52B4V7â D1213Aâ DIC-034 DMN63D8L

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502