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    DMN30H4D0LFDE Price and Stock

    Diodes Incorporated DMN30H4D0LFDE-7

    MOSFET N-CH 300V 550MA 6UDFN
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    DigiKey DMN30H4D0LFDE-7 Cut Tape 3,206 1
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    DMN30H4D0LFDE-7 Digi-Reel 1
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    DMN30H4D0LFDE-7 Reel 3,000
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    Avnet Americas DMN30H4D0LFDE-7 Reel 8 Weeks 3,000
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    Mouser Electronics DMN30H4D0LFDE-7 12,676
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    Newark DMN30H4D0LFDE-7 Cut Tape 1,184 5
    • 1 $0.584
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    DMN30H4D0LFDE-7 Reel 3,000
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    TME DMN30H4D0LFDE-7 1
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    Avnet Silica DMN30H4D0LFDE-7 10 Weeks 3,000
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    Diodes Incorporated DMN30H4D0LFDE-13

    MOSFET N-CH 300V 550MA 6UDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DMN30H4D0LFDE-13 Reel 10,000
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    DMN30H4D0LFDE-13 Digi-Reel 1
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    DMN30H4D0LFDE-13 Cut Tape 1
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    Avnet Americas DMN30H4D0LFDE-13 Reel 12 Weeks 10,000
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    Mouser Electronics DMN30H4D0LFDE-13
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    DMN30H4D0LFDE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DMN30H4D0LFDE-13 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 0.55A 6UDFN Original PDF
    DMN30H4D0LFDE-7 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V .55A 6UDFN Original PDF

    DMN30H4D0LFDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C • 0.6mm profile – ideal for low profile applications • PCB footprint of 4mm 4Ω @ VGS = 10V 0.55A • Low Gate Threshold Voltage 4Ω @ VGS = 4.5V 0.55A • Low Input Capacitance


    Original     		PDF DMN30H4D0LFDE AEC-Q101 DS36380

    Untitled

    Abstract: No abstract text available
    Text: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN30H4D0LFDE AEC-Q101 DS36380

    Untitled

    Abstract: No abstract text available
    Text: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN30H4D0LFDE AEC-Q101 DS36380

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502