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    Dawin Electronics Co Ltd DM2G100SH12AE

    High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
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    DM2G100SH12AE

    Abstract: DM2G100SH12A
    Text: DM2G100SH12AE May. 2009 High Power SPT+ & Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


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