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    MagnaChip Semiconductor Ltd DL2G50SH6N

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    DL2G50SH6N

    Abstract: DIODE 10V 10mA DL2G50SH6N, IGBT Module,
    Text: DL2G50SH6N May. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


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    PDF DL2G50SH6N Fig14. Fig15. DL2G50SH6N DIODE 10V 10mA DL2G50SH6N, IGBT Module,