Untitled
Abstract: No abstract text available
Text: S6903G,S6903J TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE S6903G, S6903J AC POWER CONTROL APPLICATIONS Unit: mm z High Rush Current Capability Optimal for controlling actuators where high rush current may flow : ITRM = 120A n = 100k cycle, Tc = 45°C
|
Original
|
PDF
|
S6903G
S6903J
S6903G,
S6903J
|
Untitled
Abstract: No abstract text available
Text: TQM679002A Data Sheet 802.11b/g/n WLAN/BT Front-End Module Features Block Diagram BTSW RXSW TXSW • Rxp Rxn PABC Balun ANT PAEN Tx in Pdetect PA Directional Detector BTH Fully Integrated, 802.11b/g/n + BT front-end module Internally matched input/output
|
Original
|
PDF
|
TQM679002A
11b/g/n
11b/g/n
16dBm
64QAM,
54Mbps
TQM679002A
IEEE802
|
Untitled
Abstract: No abstract text available
Text: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) 100W Peak Pulse Power per Line (tp=8/20 s) Protects one birectional I/O line
|
Original
|
PDF
|
DFN1006
IEC61000-4-2
IEC61000-4-4
5/50s)
8/20s)
DFN1006
UL94V-0
MIL-STD-750,
C/10s
|
Untitled
Abstract: No abstract text available
Text: UR2KB60 thru UR2KB100 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
PDF
|
UR2KB60
UR2KB100
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312017
|
SMD 0402
Abstract: No abstract text available
Text: 2381 553 2.6/MLV0402E3.3T Vishay BCcomponents SMD 0402 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor Inherent directional clamping Excellent energy/volume ratio Suitable for reflow soldering Compliant to RoHS directive 2002/95/EC
|
Original
|
PDF
|
6/MLV0402E3.
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SMD 0402
|
RC32 VISHAY
Abstract: crc50
Text: RCMM Vishay Sfernice Molded Metal Film Resistors FEATURES • 0.25 W to 1 W at 70 °C • NF C 83-230 RC21U-31U-41U-32 • CECC 40 100 • High insulation > 107 MΩ • Great mechanical strength • Termination = Pure matte tin • Compliant to RoHS directive 2002/95/EC
|
Original
|
PDF
|
RC21U-31U-41U-32)
2002/95/EC
RCMM02
RCMM05
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
RC32 VISHAY
crc50
|
Untitled
Abstract: No abstract text available
Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive
|
Original
|
PDF
|
ICTE18C,
1N6373
1N6386
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
|
Untitled
Abstract: No abstract text available
Text: SRAF520 thru SRAF5150 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
PDF
|
SRAF520
SRAF5150
E-326243
2011/65/EU
2002/96/EC
ITO-220AC
AEC-Q101
JESD22-B102
D1309004
|
Untitled
Abstract: No abstract text available
Text: QFN Package INA210, INA211 INA212, INA213 INA214 SC70 Package www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series Current-Shunt Monitor Check for Samples: INA210, INA211, INA212, INA213, INA214
|
Original
|
PDF
|
INA210,
INA211
INA212,
INA213
INA214
SBOS437E
INA211,
INA213,
|
SUP90P06-09L
Abstract: No abstract text available
Text: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS
|
Original
|
PDF
|
SUP90P06-09L
2002/95/EC
O-220AB
SUP90P06-09L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUP90P06-09L
|
DA3X107K
Abstract: DA2J10
Text: This product complies with the RoHS Directive EU 2002/95/EC . DA3X107K Silicon epitaxial planar type For high speed switching circuits DA2J107 in Mini3 type package • Features Package High reverse voltage VR Small reverse current IR Contributes to miniaturization of sets, reduction of component count.
|
Original
|
PDF
|
2002/95/EC)
DA3X107K
DA2J107
667-DA3X107K0L
DA3X107K0L
DA3X107K
DA2J10
|
Untitled
Abstract: No abstract text available
Text: SR202 thru SR220 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
PDF
|
SR202
SR220
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
AEC-Q101
JESD22-B102
|
Vishay DaTE CODE tsop-6
Abstract: si3410
Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
Si3410DV
2002/95/EC
Si3410DV-T1-E3
Si3410DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE tsop-6
si3410
|
Untitled
Abstract: No abstract text available
Text: SA5.0 thru SA170CA Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :
|
Original
|
PDF
|
SA170CA
2002/95/EC
2002/96/EC
DO-204AC,
18-Jul-08
|
|
|
Untitled
Abstract: No abstract text available
Text: DIRECTIONAL COUPLER .19 MAX IRAK MICROWAVE DIRECTIONAL COUPLER CPL / 1 0 B E - 0 8 SPECIFICATIONS: FREQUENCY LOSS COUPLING VSWR DIRECTIVITY POWER IN O- -O OUT TR4K MICROWAVE MATERIAL □ STANDARD □ SPECIAL • » o • BASE COVER MARKING FINISH FR— 4 VECTRA
|
OCR Scan
|
PDF
|
PL/10B
|
thyristor
Abstract: reverse-conducting thyristor Gate Turn-off Thyristor Thyristor triac
Text: 7. GRAPHICAL SYMBOL Type P Gate Thyristor SCR Bi Directional Triode Thyristor (Triac) Reverse-Conducting Thyristor Gate Turn-off Thyristor Graphical Symbol - ^ T,- 1 - - N-Gate Thyristor (PUT) 84 V T'
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC REV ISIONS D I ST 00 CM RESERVED. LTR DE S C R I P T I O N EC 0 G3 B P OS T TO W I T H S T A N D IN BOTH DIRECTIONS TOLERANCES MEASURED
|
OCR Scan
|
PDF
|
16-NOV-O
02JAN2002
JAN2002
JAN2002
MAR200Ü
|
GE C20C
Abstract: SM16G1 SM16G16 ge737
Text: BI-DIRECTIONAL TRIODE THYRISTOR SM16 D,G 16 SILICON PLANAR TYPE Unit AC POWER CONTROL APPLICATIONS. in mm p 1 & 8 M AX , FE ATU R E S : . Repetitive Peak Off-State Voltage : Vqrji=200 — 400V . R.M.S O n - S t a t e C u r r e n t : It (RMS)= 16A . Su i t a b l e
|
OCR Scan
|
PDF
|
SM16D16
SM16G16
TC-16A,
GE C20C
SM16G1
ge737
|
SM8GZ46
Abstract: SM8DZ46 SM8JZ46 Bi-Directional Triode Thyristor SM8DZ
Text: BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8 D, G,J Z46 AC POWER C O N T R O L A P PL IC A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage v . R.M.S On-State Current JT(RMS)= 8A D R M = 200~- 600V . 4 Trigger Mode Guarantee
|
OCR Scan
|
PDF
|
SM8DZ46
SM8GZ46
SM8JZ46
Bi-Directional Triode Thyristor
SM8DZ
|
M12JZ47
Abstract: M12GZ47 M12j 2G74 M12JZ4 SM12G M12GZ SM12JZ47 SM12JZ47A
Text: SM12 G,J Z47 SM12(G,J)Z47A BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit . Repetitive Peak Off-State Voltage :V d RM=400, 600V . R.M.S On-State Current :I-p(r m s )= 1 2A in mm . High Commutating (dv/dt) . Isolation Voltage
|
OCR Scan
|
PDF
|
SM12GZ4
SMI2GZ47A
M12JZ47
M12GZ47
M12j
2G74
M12JZ4
SM12G
M12GZ
SM12JZ47
SM12JZ47A
|
TOSHIBA THYRISTOR
Abstract: SM6J44
Text: BI-DIRECTIONAL TRIODE THYRISTOR SM6 G,J 44 SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm . Repetitive Peak Off-State Voltage: V d RM=400,600V . R.M.S On-State Current : It (R M S ) = 6A . Dual in Line Type MAXIMUM RATINGS SYMBOL CHARACTERISTIC
|
OCR Scan
|
PDF
|
SM6G44
SM6J44
TOSHIBA THYRISTOR
|
Untitled
Abstract: No abstract text available
Text: TEXAS INSTR A S I C / M E M O R Y b4E D • 8^1725 ODflEbCH 3 3b M J I SN74ABT7816 64 X 36 X 2 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCBS129-JULY1992 Free-Running CLKA and CLKB May Be Asynchronous or Coincident Two Independent 64 x 36 Clocked FIFOs Buffering Data in Opposite Directions
|
OCR Scan
|
PDF
|
SN74ABT7816
SCBS129-JULY1992
132-pln
120-pin
3S8fc888
|
SM8G41
Abstract: SM8D41 SM8G4 SM8J41
Text: S M 8 D , G , BI-DIRECTIONAL TRIODE THYRISTOR 4 1 J SILICON PLANAR TYPE AC POWER CONTR O L A P P L I C A T I O N S . Unit in m m FEATURES: 1 0 .3 M AX . . Repetitive Peak Off-State Voltage : V q r h = 2 0 0 ~ 600V . R.M.S O n - S t a t e C u r r e n t : It (r m s )= 8A
|
OCR Scan
|
PDF
|
SM8D41
SM8G41
SM8J41
SM8G4
|
diagram of ic ta7736p
Abstract: floppy motor driver TC9142P TA77 0-12V motor 12v TA7736P TA7736P/F
Text: TA7736P/F DC MOTOR DRIVER IC. The TA7736P is a 3-phase Bi-directional motor driver IC. It designed for use VCR, tape deck, floppy disk and record player motor drivers. It contains output power drivers, position sensing circuits, control amplifier and CW/CCW control
|
OCR Scan
|
PDF
|
TA7736P/F
TA7736P
TC9203F
TA7736F
diagram of ic ta7736p
floppy motor driver
TC9142P
TA77
0-12V
motor 12v
TA7736P/F
|
