S043387
Abstract: g40dc24 RELE s043387 G40AC24A S10K300 G40DC5 S043287 G40AC5 diodo led rosso LED rosso
Text: Moduli a relè a stato solido RSMO 1 DC RSMO 1 AC RSMO 1 TTL AC RSMO 1-RL uscita DC uscita AC uscita AC uscita AC Tipo Nr. Cat. RSMO 1 TTL AC S043587 I Tipo RSMO 1-RL ≤ 3 A, ≤ 1,5 A @ 70 °C 11…32 V– I = Vi-8 600 600 Ω ± 10% ≥ 10,8 Vdc ≤ 9 Vdc
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S043587
S07K300)
S10K300)
S002090
G40DC5
G40DC5A
G40DC15
G40DC24
S043387
g40dc24
RELE s043387
G40AC24A
S10K300
G40DC5
S043287
G40AC5
diodo led rosso
LED rosso
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A1000-REV00k9040-IE
Abstract: AX-REM01K9050-IE A1000-REV00k6050-IE a1000-fia3071-re A1000FIA3105RE A1000-FIV3005-RE AX-FIM1024-RE
Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3 ";CI?A; A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99
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2CSC400002D0903
Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Text: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente
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2CSC400002D0903
2CSG210200R1211
ABB E 257 C30-230
S465502
2CSG035100R1211
2CSG210100R1211
ABB SACE sn 125
EA1733
LCD TV SCHEMA
S550284
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antena microondas
Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
Text: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3
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LR200
CLS300
LR250
7ML1830-1HA
7ML1830-1MC
7ML1830-1MM
antena microondas
circuito sensor capacitivo
Denso radar
sensores capacitivos
R2N P1F transistor
A5E024
bocina
transistor J1F
LUT400
SENSORES INDUCTIVOS
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diodo 100a
Abstract: Mitsubishi transistor
Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE OM100TX1-H • lc • V ce x • hFE Collector current . 100A Collector-emitter voltage. 600V DC current gain. 80 • Insulated Type
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QM100TX1-H
OM100TX1-H
E80276
E80271
diodo 100a
Mitsubishi transistor
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SC100C-40
Abstract: diodo 100A SC100C-100 SC100C-60 SC100C-80 thyristor 2200A diodo 102 thyristor t2* n 1200 SC100C100
Text: SANSHA ELECTRIC MFG CO D THYRISTOR • 7 T i l 2 ll3 GGDDSMS =157 « S E M J SC100C r-2r-^ For general phase control applications such as speed controls, light controls and welders etc. • General power use • I t = 100A, I t rms = 160A • High voltage up to 1200V
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SC100C
T-25W?
SC100C-40
SC100C-60
SC100C-80
SC100C-100
C100C-120
diodo 100A
SC100C-100
SC100C-60
thyristor 2200A
diodo 102
thyristor t2* n 1200
SC100C100
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Untitled
Abstract: No abstract text available
Text: THYRISTOR M ODULE non -IS O L A T E D TYPE PWB100A PWB1 0 0 A is a Thyristor module suitable for low voltage, 3 phase rectifier applications. • • • • If(av) : I 00A (each device) High Surge Current 3500 A (60Hz) Easy Construction Non-isolated. Mounting base as common Anode terminal
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PWB100A
000237R
0D023AD
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SC30C-100
Abstract: SC30C-60 SC30C-120 SC30C-40 SC30C-80 diodo 100A SC30C Diodo LT 45
Text: S A NS HA E L E C T R I C MFG CO 5bE D • 000053M flflO « S E M ü THYRISTOR SC30C T-2 5-17 For general phase control applications such as speed controls, light controls and welders etc. • General power use I t = 30A, It rms =47A • High voltage up to 1200V
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000053M
SC30C_
SC30C-40
SC30C-60
SC30C-80
SC30C-100
SC30C-120
D000S3S
diodo 100A
SC30C
Diodo LT 45
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Untitled
Abstract: No abstract text available
Text: SSS1N60A Advanced Power MOSFET FEATURES BVoss “ 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 yA M ax. @ VOS= 600V
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SSS1N60A
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SC30C-60
Abstract: SC30C-120 SC30C-80 SC30C-100 SC30C-40 MAX5102
Text: THYRISTOR SC30C For general phase control applications such as speed controls, light controls and welders etc. • • • • General power use It = 30A, It rms = 47A High voltage up to 1200V High surge current of 600A • Stud type F? I •> M6P1. Unit : mm
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SC30C_
SC30C-40
SC30C-60
SC30C-80
SC30C-100
SC30C-120
B-248
MAX5102
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Untitled
Abstract: No abstract text available
Text: TH YRISTO R SC100C • Maximum Ratings SC100C-40 SC100C-60 SC100C-80 SC100C-100 SC100C-120 Ite m S ym bol U n it V rrm R e p e titiv e P e a k R e v e rs e V o lta g e 400 600 800 1 000 12 0 0 V V rsm N on-R epetitive Peak Reverse V oltage 480 720 960 1 100
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SC100C
SC100C-40
SC100C-60
SC100C-80
SC100C-100
SC100C-120
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diodo 007
Abstract: No abstract text available
Text: PD - 9.1267G International IGR Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss =
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1267G
IRF7504
46SS4S2
diodo 007
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BA-20 diode
Abstract: D 92 M - 03 DIODE high power diode 500v 1N50 1N50C p channel mosfet 100v 2A 500V MOSFET TSM1N50 TAG TO-92 500v 2A mosfet
Text: $ TAIW AN TSM1N50 SEMICONDUCTOR 500V N-Channel Power MOSFET pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition; 1. Gate 2. Drain 3. Source Vos (V) R ü S (o n ){ß ) 500 5.5 @ V«S=10V Id (A) 0.5 1 23 General Description The T S M 1N 5 0 is used an advanced term ination schem e to provide enhanced voltage-blocking capability w itho ut
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TSM1N50
TSM1N50
BA-20 diode
D 92 M - 03 DIODE
high power diode 500v
1N50
1N50C
p channel mosfet 100v
2A 500V MOSFET
TAG TO-92
500v 2A mosfet
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12T24
Abstract: 2012S12 bt 1224 2005S12 2005S24 2005S48 2006S12 2006S24 2006S48 2506S
Text: Distributed By: E . J. W olfe E nterprises, Inc. - info@ bjw e.com , 800 554-1224, Fax (818) 889-8417 W M m ► W ide 2:1 Input Voltage Range ► Input 7i Filter ► Continuous Short Circuit Protection ► U L 1950 Approved File No. E140645
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E140645
MIL-HDBK-217F
4-40X
12T24
2012S12
bt 1224
2005S12
2005S24
2005S48
2006S12
2006S24
2006S48
2506S
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hall marking code A04
Abstract: INTELDX4 write-through YSS 928
Text: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers
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INTEL486â
100-MHz
32-Bit
16K-Byte
hall marking code A04
INTELDX4 write-through
YSS 928
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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