thyristor k 202 russian
Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Text: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)
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SS15BL
M6x15
M6x10
thyristor k 202 russian
russian diode
kp20a 600v
kp20a
ZP20A
optothyristor
KP300A
KP200A
T143-630 SCR
zp5a
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gallium phosphide band structure
Abstract: silicon carbide LED Zinc sulfide Sic led light emitting diode siemens monocrystalline efficiency Siemens LED visible light 35p0 siemens sic leds design
Text: Blue Light Emitting SiliconCarbide Diodes—Materials, Technology, Characteristics Appnote 31 by Dr. Claus Wyrich Siemens Research Laboratories Munich, Germany Introduction Light-emitting diodes LEDs are widely used in the field of electronics as indicator lamps and seven-segment displays
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808nm 1W laser diode
Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Text: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical
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O-220
D-93049
de/Semiconductor/products/37/376
B143-H7010-G1-X-7600
TS12975.
808nm 1W laser diode
980nm led
laser diode 905nm
led 940nm high power 1W
laser diodes 808nm 1w
905nm Plastic Pulsed Laser Diode
780nm laser diode module
SPL/780nm laser diode module
CG94
TO220 Semiconductor Packaging
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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FR4 substrate antenna
Abstract: BAR63-02W BAR63 BAR81W SCD80 siemens diodes DECT siemens 140FF
Text: Application Note No. 049 Discrete & RF Semiconductors DECT Transmit - Receive Switch Using Ultra Small PIN Diodes This application note covers a redesign of a PIN diode switch introduced in application note number 007. It uses Diodes in SCD80 and SOT343 package,
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SCD80
OT343
BAR63
BAR81W
150pF
89GHz
FR4 substrate antenna
BAR63-02W
BAR63
BAR81W
siemens diodes
DECT siemens
140FF
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Untitled
Abstract: No abstract text available
Text: SIEMENS A KTI ENGESELLS CHA F bGE D • ÛB3SbGS ÜÜ4S43Ü T73 « S I E G Microwave, RF & Tuner Diodes For com plete package outlines, refer to pages PO-1 through PO-6 RF Diodes Schottky Diodes For Professional Applications Medium Barrier Type Frequency Band
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BAT15-014
BAT15-044
BAT15-074
BAT15-104
BAT15-124
BAT15-016
BAT15-036
BAT62
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BXY 36 300
Abstract: cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx
Text: SIEMENS 4 HiRel Discrete and Microwave Semiconductors Selection Guides for HiRel Discrete Semiconductors The Selection Guide provides main maximum ratings and electrical key parameters typical data . 4.1 HiRel Silicon Diodes Low Barrier Silicon Schottky Diodes
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BAT15-013/014
BAT15-033/034
BAT15-043/044
BAT15-063/064
BAT15-073/074
BAT15-093/094
BAT15-103/104
MWP-25
MWP-35
BXY 36 300
cfy66
GHZ micro-X Package
BFY19
CFY67-08
107 micro-x
BFY183
BFY420
Microwave Semiconductors
BFY193 Microx
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Q62702-D979
Abstract: 44S marking code Q62702-D980 44S DIODE Q62702-D1314 44s SOT23-3 DIODE 4004 BAS 20 SOT23 46s sot23 marking 47s
Text: SIEMENS Silicon Schottky Diodes • • • • 6 BAS 40 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-D339
Q62702-D980
EHA0700!
OT-23
Q62702-D979
CHA07005
CMA07004
Q62702-D978
EHA0700C
Q62702-D979
44S marking code
Q62702-D980
44S DIODE
Q62702-D1314
44s SOT23-3
DIODE 4004
BAS 20 SOT23
46s sot23
marking 47s
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aaf marking sot23-5
Abstract: No abstract text available
Text: BAS 40 Silicon Schottky Diodes 32E D • aa3b32Q QQlbSlG 2 ISIP SIEMENS/ SPCLi SEMICONDS • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing £ - available with C ECC quality assessment
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aa3b32Q
OT-23
62702-D
10kHz
23b35Q
T-03-09
aaf marking sot23-5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAS 40. • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing € Available with C E C C quality assessm ent ESD : Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-D339
OT-23
CHA07002
Q62702-D980
Q62702-D979
Q62702-D978
EHAQ7004
EHA07006
0S35bOS
0120SÃ
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BAR14-1
Abstract: No abstract text available
Text: SIEMENS AKTIEN6ESELLSCHAF bOE H • J23Sb05 0051MaM M83 « S I E G SIEMENS -T -07-16 Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Characteristics (TA= 25° C) Maximum Ratings Type 1, V Ct pF mA V BA 585
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J23Sb05
0051MaM
SQ-fiSh50
BAR14-1
BAR14-1
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes • • • • £ BAS 7 0 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with C E C C quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-A118
OT-23
CHA07Ã
Q62702-A730
EHA0700S
Q62702-A711
EHA07004
Q62702-A774
EHA07006
0235bOS
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Q62703-Q1566
Abstract: TA 7503 Q62703-Q1568 Q62703-Q1570 Q62703-Q1579 Q62703-Q1598 Q62703-Q1599
Text: QBE D • Û235b05 OQlblbH 3 « S I E G LG S259 .LSS259 Light Emitting Diodes SIEMENS AKTIENGESELLSCHAF " T - V / - / ? LED low-current single diodes • Backlighting of LCDs • Indicator for switching and operation modes • Direct drive is possible via CMOS gate and
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fl235b05
LSS259
18-cm-reel
E-7502
33-cm-reel
E-7503
S259-BO
Q62703-Q1598
Q62703-Q1566
TA 7503
Q62703-Q1568
Q62703-Q1570
Q62703-Q1579
Q62703-Q1599
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eye response curve
Abstract: S250-DO S250 smd lg diode diode s250 diode LR smd Q62703-Q1539 TA 7503 Q62703-Q1516 Q62703-Q1517
Text: L Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-J f SIEMENS AKTIEN6ESELLSCHAF LED s-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards
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18-cm-reel
E-7502
33-cm-reel
E-7503
S250-DO
S250-D0
0LYS25O-DO
S250-D0
Q62703-Q1539
eye response curve
S250
smd lg diode
diode s250
diode LR smd
TA 7503
Q62703-Q1516
Q62703-Q1517
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BAR12-1
Abstract: BAS40-02 BAR63 BAS40 BAS70 BAS70-02 BXY42 BXY43A BXY43B BXY43C
Text: SIEMENS AKTIENGESELLSCHAF bOE » • 6E35b05DD454337ö2 SIE6 Microwave, RF & Tuner Diodes For complete package outlines, refer to pages PO-1 through PO-6 Schottky Diodes for General Purposes Type BAS40-02 BAS70-02 V 'f mA 40 70 100 50 C ase C h aracteristics TA=25°C
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BAS40-02
BAS40
BAS70-02
BAS70
BXY42
BXY43B
BXY43C
BAR63
BXY44K
BAR12-1
BAR63
BAS40
BAS70
BXY43A
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BB409
Abstract: BA389 d bb833 PACKAGE OUTLINES sod bb609
Text: SIEMENS AKTIEN6ESELLSCHAF bOE D fl23SbDS D G 4 S 4 n 3G5 « S I E Ê Microwave, RF & Tuner Diodes T 07-01 - For complete package outlines, refer to pages PO-1 through PO-6 PIN General Purpose, Switching Diodes Characteristics (TA=25°C) Maximum Ratings IType
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fl23SbDS
BA582
BA585
BA586
BA592
BA595
BA885
BA886
BAR15-1
BAR17
BB409
BA389
d bb833
PACKAGE OUTLINES sod
bb609
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SIEMENS BB409
Abstract: bb409
Text: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/
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fi23SbOS
BB419
OD-123
BB409
BB439
OD-323
BB512
BB515
SIEMENS BB409
bb409
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BA389 PIN Diode
Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Text: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure
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BA282
BA284
BA389 PIN Diode
ba389
BA284
V/BA389 PIN Diode
BA389 diode
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Untitled
Abstract: No abstract text available
Text: S IP T - o ï - Q ^ 35E D • â 2 3 b 3 5 0 QOlbSlB fl BAS 70. Silicon Schottky Diodes SIEMENS/ SPCL-. SEMICONDS • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing C - available with CECC quality assessment
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OT-23
2702-A
23b320
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Bat 16-046
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF bGE ]> 7 ^0 3 - / 3 SIEMENS Dioden Diodes Schottky Dioden Schottky Diodes /R at PF fiA Dual 25 100 < 1 .1 0 < 1.00 20 <400 BAS 125-06 (Dual) 25 100 < 1 .1 0 < 1.00 20 <4 0 0 BAS 125-07 (Dual) 25 100 < 1 .1 0 < 1 .0 0 ' 20 4 90 <0.35
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14-099R
15-099R
OT-23
BAL99
Bat 16-046
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leistungs dioden siemens
Abstract: siemens dioden siemens diodes leistungstransistoren
Text: SIEMENS Leistungs halbleiter Power Semiconductors Leistungstransistoren Diskrete IGBT Dioden Power Transistors Discrete IGBT Diodes Datenbuch 11.96 Data Book 11.96
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marking SH SOT23
Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Text: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123
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0235bDS
DO-35
OD-123
OT-23
marking SH SOT23
smd marking 619
BB505B
smd marking bb
marking 12 SOD123
SOD-123
BB801
BB409
BA 811
SIEMENS marking
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BB409
Abstract: BB505B BB801 BB304 BB505 BB204 BB610 BB314 BB505G bb609b
Text: flñ D E Í f lH 3b 32 0 0 0 1 4 2 5 4 □ | 8236320 SIEMENS/ S P C L , SEMICONDS 88D 14254 D f " 07" Diodes Silicon tuning diodes Glass package DO 35 Characteristics TA = 25°C Type Applications Figure rs C ti/ C t2 V r \/Vr2 PF Vr V BB 409 4 .5 . 5.6
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aS3b320
55itiB
35max.
E30ES30H
BB409
BB505B
BB801
BB304
BB505
BB204
BB610
BB314
BB505G
bb609b
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siemens diodes
Abstract: marking ha
Text: Silicon Schottky Diodes • • • • BAS 40 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing € - available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!
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62702-D
siemens diodes
marking ha
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