Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODES REDRESSEMENT THOMSON Search Results

    DIODES REDRESSEMENT THOMSON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODES REDRESSEMENT THOMSON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N2919

    Abstract: CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique
    Text: high voltage rectifier diodes o diodes de redressement haute tension THOMSON-CSF Types / T a m il 250 itiA •o Vr r m mA (V) = 50°C M 15 K/1N2887 M 20 K/1N 2891 1N 2897 M 30 K/1N 2901 1N 2905 M 40 K/1 N 2911 1N 2915 M 50 K/1N 2919 1N2921 M 60 K/1 N 2923


    OCR Scan     		PDF K/1N2887 K/1N2891 M30K/1N2901 M40K/1N2911 K/1N2919 1N2921 80K/05RM CB-47/CB-48) 650mA ICB-47/CB-48) 1N2919 CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique

    diode byx

    Abstract: PAS 1066 byx 21
    Text: STCd | S G S—THOMSON O 7 cî 2 c] c!3? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 600 -+ 1000 V 'F (A V ) <Tcm « 100°C)


    OCR Scan     		PDF CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 diode byx PAS 1066 byx 21

    Untitled

    Abstract: No abstract text available
    Text: SÌC S G S-THGMSON D | 7^2^37 D0Ü2Q7M T:.ù X '/ ? 5 9C 02074 D 1 N 3 8 9 9 —1 N 3 9 0 3 , R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS BYX 6 3 -6 0 0 , (R) SUPERSWITCH FA ST R ECO V ERY R E C T IF IE R DIODES DIODES DE RED R ESSEM EN T RAPID ES


    OCR Scan     		PDF Tcaje100OCÂ CB-428) 55depth CB-19) CB-244

    Untitled

    Abstract: No abstract text available
    Text: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '


    OCR Scan     		PDF 00G2271 CB-262 CB-262) CB-19) CB-428) CB-244

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367