RECTIFIER 92-50
Abstract: diodes byw 92 dt 9250 sid microelectronics
Text: BYW 92-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT100°C
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AT100
RECTIFIER 92-50
diodes byw 92
dt 9250
sid microelectronics
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diodes byw
Abstract: BYW 90
Text: HO g @llLIM®[iiiO(g® S *7Æ, G S - 1 H M S BYW 92-50 N 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY
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AT100Â
20J1S
diodes byw
BYW 90
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WJ 60
Abstract: diodes byw 92 04-TP
Text: f Z 7 SCS-THOMSON 7# “ BYW 92 -5 0 -> 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY ■ THE SPECIFICATIONS AND CURVES EN
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Untitled
Abstract: No abstract text available
Text: r z 7 S C S -T H O M S O N * 7 # M eB m iO T M O C S BYW 08-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES . LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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diode BYW 92
Abstract: 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 diode BYW 66 diodes byw 5 amp diode byw 92-200 rms p2f
Text: S G S- TH OM SO N O STC T H O M D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) S O N - C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH H IG H E F F IC IE N C Y FAST R E C O V E R Y R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT
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0DG2252
7T2C1537
0QQ22S7
diode BYW 92
5 amp diode byw 92
diode BYW 92-200
SA 9259
diode puissance 30 amp
BYW 90
diode BYW 66
diodes byw
5 amp diode byw 92-200
rms p2f
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BYW 200
Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
Text: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)
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28UNF*
CB-34)
BYW 200
diodes byw 92
byw 150
diodes byw 08 200
Thomson-CSF diodes de redressement
Diodes de redressement
diodes byw
CB-34
1250A2s
92200
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BYV 200
Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-150ng
BYX61-100
BYV 200
BYV 200v
FZJ 101
BYX61-200
BYW 200
BYX61-400
99P-200
BYX65-400
BYV 35 C
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BYV 200
Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Text: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-1508-100,
BYV 200
diodes byw 92
FZJ 101
99P-200
byw 150
BYW 200
diodes byw 08 200
BYV 35
diodes byw 51 200
BYV 35 C
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BYW 90
Abstract: l200c 1200C dioda ZTF 160 soae
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH
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I71H1237
BYW 90
l200c
1200C
dioda
ZTF 160
soae
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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diode byw 81 200
Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
Text: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY
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Iat100Â
diode byw 81 200
Diode BYW 59
Diode BYW 56
diode BYW 66
Q002
ANTENA
8150 diode
diode BYW
diode BYW 81
diode P2F
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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diode BYW 66
Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Text: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T
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diodes byw 92
Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Text: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH
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BYW08
diodes byw 92
BYW 200
ZTF 160
thomson diodes
diode BYW 92
diode La
AV8080
diode BYW 66
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diode BYW 66
Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY
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BYW80150A
Q00S2M5
diode BYW 66
diode P2F
DIODE DO-220
high efficiency fast recovery diode byw
BYW 90
diode BYW 85
BYW 26
8050 2D C
diode BYW
diode BYW 60
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transistor S 8050
Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY
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BYWB05Q
130OC
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
transistor S 8050
ggqb2
8A273
BYW60
Diode BYW 56
150TV
diodes byw
transistor 8050 d
diode BYW 60
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77150
Abstract: diode BYW 31 200
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT
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QGGE22Û
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
77150
diode BYW 31 200
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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77150
Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228
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PIAVI51
BVW77
77150
diode puissance 30 amp
diode BYW 76
diode BYW 66
BYW 77
high efficiency fast recovery diode byw
diode BYW
BYW 90
22313
diodes byw
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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diodes byw
Abstract: diodes byw 16400 BYW 200 78200 byw77-200 77200 BYW81-100 byw 150 BYW 81-200 Vrrm
Text: THO M SO N Ï1IL ET S P A T I A U X SSE D • R02t,ê75 OGOOMfl'i 066 ■ T H C M DISCRETE COMPONENTS û_ PRODUCT DESCRIPTION PACKAGE s HIGH EFFICIENCY FAST RECOVERY RECTIFIERS BYW 77-150 V rr M = 150 V lo = 25 A trr max = 50 ns V r RM = 200 V lo = 25 A trr max = 50 ns
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BYW81-100
2x10A
diodes byw
diodes byw 16400
BYW 200
78200
byw77-200
77200
byw 150
BYW 81-200
Vrrm
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BYV 35 C
Abstract: BYV 200 BYW 200 BYW 56 V diodes byw 86 bvy 121 byv 65 BYY 56 diodes byw 29150
Text: 'T - 0 3 - O I . Epitaxial rectifier diodes Type :‘»IE d eupec Vrrm V • 34D32ci7 0DDD15T 4?b ■ Ifavm Ifsm VF tA= 25°C 10 ms, tv, max tv| = 25 °C VR = Vrrm tvj = tVjmax A V < 1 ,7 5 A ¡f = I f a v m Ir upec trr Wj max mA ns °c < 0 ,2
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diodes byw
Abstract: 29150 BYV 35 C
Text: Epitaxial rectifier diodes Type V rrm = 2 5 “C t* V VF Ifs m Ifa v m A 10 m s, •f W max t v| A V Ir = Ifavm = 2 5 °C VR tuj tv j max trr Outline = V rrm = t vj max mA ns °C BYR 29-800 800 8 60 < 1 ,7 5 < 0 ,2 <75 150 132 BYT 79-500 500 14 150 < 1 ,4
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57/58-E
57/58-E
diodes byw
29150
BYV 35 C
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