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    DIODE ZD 33 Search Results

    DIODE ZD 33 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ZD 33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    37400

    Abstract: 627 DIODE ZD 222 D-68623 HTZ180D22K HTZ180D26K HTZ180D30K HTZ180D35K
    Text: HTZ180D Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.3 A VRRM = 35000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ180D35K HTZ180D30K HTZ180D26K HTZ180D22K 35000 30000 26000 22000 37400 33000 28600 24200 CIRCUIT DIAGRAM


    Original     		PDF HTZ180D HTZ180D35K HTZ180D30K HTZ180D26K HTZ180D22K D-68623 37400 627 DIODE ZD 222 HTZ180D22K HTZ180D26K HTZ180D30K HTZ180D35K

    Untitled

    Abstract: No abstract text available
    Text: VBUS054B-HSF Vishay Semiconductors 4-Line BUS-port ESD-Protection FEATURES 6 5 4 • Ultra compact LLP75-6L package • Low package height < 0.6 mm • 4-line USB ESD-protection • Low leakage current 20397 1 2 3 • Low load capacitance CD = 0.8 pF 20453


    Original     		PDF VBUS054B-HSF LLP75-6L 2002/95/EC 2002/96/EC VBUS054B-HSF VBUS054B-HSF-GS08 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: VBUS054B-HSF Vishay Semiconductors 4-Line BUS-port ESD-Protection FEATURES • Ultra compact LLP75-6L package • Low package height < 0.6 mm • 4-line USB ESD-protection • Low leakage current • Low load capacitance CD = 0.8 pF 20453 • ESD-protection acc. IEC 61000-4-2


    Original     		PDF VBUS054B-HSF LLP75-6L 2002/95/EC 2002/96/EC VBUS054B-HSF VBUS054B-HSF-GS08 18-Jul-08

    IM14400-E

    Abstract: MM14400E09 IM14400E 2N3904 TLP521 IM14400
    Text: LDIP-IPM IM14400-E Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● Home appliances applications. Inverter drive parts for AC/DC motor driving.


    Original     		PDF IM14400-E E204652. MM14400E09 IM14400-E MM14400E09 IM14400E 2N3904 TLP521 IM14400

    MM13400E05

    Abstract: 2N3904 TLP521 fin heat sink igbt
    Text: LDIP- IPM IM13400-E Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● ● Home appliances applications. Inverter drive parts for AC/DC motor driving.


    Original     		PDF IM13400-E E204652. MM13400E05 MM13400E05 2N3904 TLP521 fin heat sink igbt

    IM14400

    Abstract: 600v 30a diode zener c2 6 MM14400008 2N3904 TLP521 ac drive circuit diagram diode zener ZD 103
    Text: LDIP-IPM IM14400 Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● Home appliances applications. Inverter drive parts for AC/DC motor driving.


    Original     		PDF IM14400 E204652. MM14400008 IM14400 600v 30a diode zener c2 6 MM14400008 2N3904 TLP521 ac drive circuit diagram diode zener ZD 103

    diode zd 33

    Abstract: 40050
    Text: Zubehör für Magnetventile Accessories Solenoid Valves Gerätesteckdosen Plug-In Sockets Technische Daten: Nennspannung AC/DC: 24 V Betriebsstrom: max. 4 A Leitungslänge: 3m Schutzbeschaltung: Z-Diode Gehäuse: schwer entflammbarer Kunststoff Schutzart:


    Original     		PDF

    diode zener ZD 260

    Abstract: No abstract text available
    Text: VBUS054B-HSF Vishay Semiconductors 4-Line BUS-port ESD-Protection FEATURES 6 5 4 • Ultra compact LLP75-6L package • Low package height < 0.6 mm • 4-line USB ESD-protection • Low leakage current 20397 1 2 3 • Low load capacitance CD = 0.8 pF 20453


    Original     		PDF VBUS054B-HSF LLP75-6L 2002/95/EC 2002/96/EC VBUS054B-HSF VBUS054B-HSF-GS08 11-Mar-11 diode zener ZD 260

    G10597

    Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.


    Original     		PDF PA1500B PA1500B G10597 pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059

    MM13400004

    Abstract: IM13400 2N3904 TLP521
    Text: LDIP- IPM IM13400 Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● ● Home appliances applications. Inverter drive parts for AC/DC motor driving.


    Original     		PDF IM13400 E204652. MM13400004 MM13400004 IM13400 2N3904 TLP521

    IM15400

    Abstract: 2N3904 TLP521 diode zener ZD 260 MM15400002
    Text: LDIP- IPM IM15400 Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● ● Home appliances applications. Inverter drive parts for AC/DC motor driving.


    Original     		PDF IM15400 E204652. MM15400002 IM15400 2N3904 TLP521 diode zener ZD 260 MM15400002

    Untitled

    Abstract: No abstract text available
    Text: VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection e3 Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge


    Original     		PDF VBUS054B-HS3 LLP75-6A 2002/95/EC 2002/96/EC VBUS054B-HS3 VBUS054B-HS3-GS08 18-Jul-08

    VBUS054B-HS3-GS08

    Abstract: marking code U6
    Text: VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge


    Original     		PDF VBUS054B-HS3 LLP75-6A 2002/95/EC 2002/96/EC VBUS054B-HS3 VBUS054B-HS3-GS08 2011/65/EU 2002/95/EC. marking code U6

    diode zd 33

    Abstract: yy12
    Text: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum


    OCR Scan     		PDF 10-CHANNEL, 50V/V 200nH 10OmV, 10MHz 600nH, diode zd 33 yy12

    WT 7520

    Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
    Text: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature


    OCR Scan     		PDF T-Ol-01 -28-Unt-2A- 453/JJ5Ã 422M0 T0-94 h-755 WT 7520 diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper

    VM312

    Abstract: DIODE H5y VM312-8PMJ VM3128
    Text: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum


    OCR Scan     		PDF VM312 10-CHANNEL, 50V/V 200nH 32R512 34-lead VM3129PMJ 28-Lead VM3126SSJ 10-Channel VM312 DIODE H5y VM312-8PMJ VM3128

    zd2500

    Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
    Text: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS


    OCR Scan     		PDF T-Ol-01 1001b. 254-turns zd2500 WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070

    DIODE H5X

    Abstract: diode zd 33 DIODE H5y diode zd 12
    Text: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono­ lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current


    OCR Scan     		PDF 10-CHANNEL, 10-Channel 44-lead 36-lead 28-Lead DIODE H5X diode zd 33 DIODE H5y diode zd 12

    Untitled

    Abstract: No abstract text available
    Text: WÉÊ VTC Inc. Value the Customer VM7100 2, 4 O R 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/W RITE PR EA M PLIFIE R PRELIMINARY FEATURES D ESCRIPTIO N The VM7100 is a high-performance, very low-power read/ write preamplifier designed for use with external 2-terminal,


    OCR Scan     		PDF VM7100 VM7100 100mV, 10MHz

    TC74HC40102

    Abstract: 74HC40103
    Text: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC401Q3P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER_ The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		PDF TC74HC40102P TC74HC40103P TC74HC401Q3P TC74HC40102 TC74HC40103 40102/40103B) 74HC40103 TC74HC40102P

    74HC40103

    Abstract: No abstract text available
    Text: TQSHIEA L OGIC/MEMORY 14E D I Q01ÛS76 T | _ TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER The TC74HC40102 and TC74HC401O3 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2M0S technology.


    OCR Scan     		PDF TC74HC40102P TC74HC40103P TC74HC40102P TC74HC40103P TC74HC40102 TC74HC401O3 40102/40103B) 74HC40103

    Untitled

    Abstract: No abstract text available
    Text: 4DE D S BMRTTBfl 0D01i025 b E3SENI T '4 H FASCO INDS/ SENISYS CLED1 CLED1A CLED1B CLED1C Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed hermetic TO-46 package. It emits an intense band of radia­


    OCR Scan     		PDF 0D01i025

    Untitled

    Abstract: No abstract text available
    Text: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:


    OCR Scan     		PDF 14-CHANNEL, VM312H 32R5121 600nH,

    TC74HC40103P

    Abstract: hc745 HC-748 HC-746 4HC40103 HC-755 HC-753 TC74HC40102 diode zd 33 HC754
    Text: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology. They operate ten times as fast as that of metal-gate C2MOS IC 40102/40103B with


    OCR Scan     		PDF TC74HC40102P TC74HC40103P TC74HC40103P TC74HC40102 TC74HC40103 40102/40103B) 74HC40103 TC74HC40102P hc745 HC-748 HC-746 4HC40103 HC-755 HC-753 diode zd 33 HC754