DPGL-2050
Abstract: DPGL-1050 DPGL-2000 2 Wavelength Laser Diode 532 nm laser diode LDC-2500 LDD-1000 DPGL-1000 DPGL-2100 DPGL-3010
Text: CASIX DIODE PUMPED SOLID STATE LASERS CASIX, Inc. is a leading manufacturer of crystals, optics and lasers. The line of CASIX Diode Pumped Solid State DPSS Lasers includes five models which are featured with infrared (1064 nm) CW output power from 50 mW to 300 mW and green
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TEM00)
DPGL-2050
DPGL-1050
DPGL-2000
2 Wavelength Laser Diode
532 nm laser diode
LDC-2500
LDD-1000
DPGL-1000
DPGL-2100
DPGL-3010
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6.3 B1 zener diode
Abstract: zener diode B3 B1 6 zener diode ZENER A2 6 HZS7L diode Hitachi DSA002786 a3 7 zener 9.1 b3
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-121A
6.3 B1 zener diode
zener diode B3
B1 6 zener
diode ZENER A2 6
HZS7L diode
Hitachi DSA002786
a3 7 zener
9.1 b3
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Untitled
Abstract: No abstract text available
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ36-2L
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HZ9B2L
Abstract: HZ6C1L HZ6C semiconductor HZ18 ZENER HZ9A1L HZ24-2L HZ6C3L HZ9A2L HZ11A2L HZ7A3L
Text: HZ-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0182-0300 Rev.3.00 Nov.06.2007 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0182-0300
DO-35
REJ03G0182-0300
GRZZ0002ZB-A
HZ9B2L
HZ6C1L
HZ6C
semiconductor HZ18
ZENER HZ9A1L
HZ24-2L
HZ6C3L
HZ9A2L
HZ11A2L
HZ7A3L
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SILICON PLANAR zener diode DO-35
Abstract: BAY 73 diode B2 Zener hz30 hz6a MARK b3 zener diode
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z Previous: ADE-208-118A Rev.2.00 Mar.11.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0182-0200Z
ADE-208-118A)
DO-35
SILICON PLANAR zener diode DO-35
BAY 73 diode
B2 Zener
hz30
hz6a
MARK b3 zener diode
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B2 Zener
Abstract: A2 9 zener diode zener mark code C1 zener diode B3 Hitachi DSA00776 zener diode c2 HZ16L a3 6 zener zener diode A3 zener diodes color coded
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 November 1996 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
SC-48
B2 Zener
A2 9 zener diode
zener mark code C1
zener diode B3
Hitachi DSA00776
zener diode c2
HZ16L
a3 6 zener
zener diode A3
zener diodes color coded
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ECG 177 zener diode
Abstract: B2 Zener colour code diode zener zener diode a3 zener marking hitachi zener color codes Zener Diode B1 9 A2 9 zener diode B2 marking code Zener b3 zener
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev. 1 Nov. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
ECG 177 zener diode
B2 Zener
colour code diode zener
zener diode a3
zener marking hitachi
zener color codes
Zener Diode B1 9
A2 9 zener diode
B2 marking code Zener
b3 zener
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HZS7L
Abstract: HZS6A2L zener marking hitachi Hitachi DSA0076 ADE-208-121A HZS11L HZS12L HZS15L HZS16L HZS18L
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-121A
HZS7L
HZS6A2L
zener marking hitachi
Hitachi DSA0076
HZS11L
HZS12L
HZS15L
HZS16L
HZS18L
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ECG 177 zener diode
Abstract: MARK b3 zener diode do-34 hitachi HZS7LA1 ECG zener diode Hitachi DSA00280 zener hitachi
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev. 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-121A
D-85622
ECG 177 zener diode
MARK b3 zener diode
do-34 hitachi
HZS7LA1
ECG zener diode
Hitachi DSA00280
zener hitachi
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ECG 177 zener diode
Abstract: B2 Zener HZ6L Hitachi DSA002721 Zener do35 marking code a2 Zener do35 marking code 9 a2
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 November 1996 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
-55Hitachi
ECG 177 zener diode
B2 Zener
HZ6L
Hitachi DSA002721
Zener do35 marking code a2
Zener do35 marking code 9 a2
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Untitled
Abstract: No abstract text available
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-121A
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do-34 302 zener diode
Abstract: 5.6 B1 zener diode HZS6A2L HZS7L A2 zener diode ADE-208-121A zener series RD HZS9B2L zener diode A3 zener mark code C1
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-121A
DO-34
do-34 302 zener diode
5.6 B1 zener diode
HZS6A2L
HZS7L
A2 zener diode
zener series RD
HZS9B2L
zener diode A3
zener mark code C1
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brake rectifier motor
Abstract: dc chopper circuit ANS5 diode x18
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9
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brake rectifier motor
Abstract: DIODE N7
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features
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HZT7A3
Abstract: HZT7B2 Hitachi DSA00303 hitachi Zener Diode marking code
Text: ADE-208-131A Z HZT7 Monolithic IC Zener Diode for Temperature Compensation Rev. 1 Apr. 1995 Features Outline • Lower temperature coefficient of the reference voltage. (γZ = ±0.002 to ±0.01 %/°Cmax) HZT 7 1 2 Type No. Cathode band Ordering Information
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ADE-208-131A
DO-35
SC-48
HZT7A3
HZT7B2
Hitachi DSA00303
hitachi Zener Diode marking code
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HZT7A1
Abstract: No abstract text available
Text: ADE-208-131A Z HZT7 Monolithic IC Zener Diode for Temperature Compensation Rev. 1 Apr. 1995 Features Outline • Lower temperature coefficient of the reference voltage. (γZ = ±0.002 to ±0.01 %/°Cmax) HZT 7 1 2 Type No. Cathode band Ordering Information
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ADE-208-131A
DO-35
SC-48
HZT7A1
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HZT33
Abstract: hitachi product ordering diode hitachi Hitachi DSA00359 Hitachi DSA003 Hitachi DSA0035
Text: HZT33 Monolithic IC Zener Diode for Temperature Compensation ADE-208-135B Z Rev 2 Nov. 1999 Features • Lower temperature coefficient of the reference voltage. (γz=±1 mV/°C typ) • Lower dynamic resistance. Ordering Information Type No. Mark Package Code
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HZT33
ADE-208-135B
DO-35
HZT33
hitachi product ordering
diode hitachi
Hitachi DSA00359
Hitachi DSA003
Hitachi DSA0035
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c2 zener renesas
Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0184-0300Z
ADE-208-120B)
c2 zener renesas
B2 Zener
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS24
HZS30
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B2 Zener
Abstract: REJ03G0180-0300Z HZ2A1
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0180-0300Z Previous: ADE-208-117B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
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REJ03G0180-0300Z
ADE-208-117B)
DO-35
B2 Zener
REJ03G0180-0300Z
HZ2A1
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hitachi zener do-35
Abstract: zener diode BLUE BAND Hitachi DSA00776 HZT33 HZT7A3 SC-48 HZT7A1 DO-35 BLUE CATHODE zener diode marking code 40 hitachi Zener Diode marking code
Text: ADE-208-131A Z HZT7 Monolithic IC Zener Diode for Temperature Compensation Rev. 1 Apr. 1995 Features Outline • Lower temperature coefficient of the reference voltage. (γZ = ±0.002 to ±0.01 %/°Cmax) HZT 7 1 2 Type No. Cathode band Ordering Information
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ADE-208-131A
DO-35
SC-48
hitachi zener do-35
zener diode BLUE BAND
Hitachi DSA00776
HZT33
HZT7A3
SC-48
HZT7A1
DO-35 BLUE CATHODE
zener diode marking code 40
hitachi Zener Diode marking code
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HZ11
Abstract: HZ12 HZ15 HZ16 HZ20 HZ24 HZ30 HZ36 39b2
Text: HZ H Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0181-0100Z (Previous: ADE-208-794) Rev.1.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
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REJ03G0181-0100Z
ADE-208-794)
DO-35
HZ11
HZ12
HZ15
HZ16
HZ20
HZ24
HZ30
HZ36
39b2
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904nm
Abstract: GaAs 904nm diode s 360 904nm laser diode LA390 LA330 ld330
Text: LASER DIODE INC 1SE D | SBflE^flS □□□G4ÖS D | * - ~ '* g 5 > 1 0 D , LASER DIODE, INC._ LA-300 SERIES LD-3 T ' " tfl"P s r GaAs and GaAlAs LASER DIODE ARRAYS FOR PULSED OPERATION FEATURES ► High Efficiency a t Low Drive Currents
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LA-300
904nm
904nm
GaAs 904nm
diode s 360
904nm laser diode
LA390
LA330
ld330
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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marking ya
Abstract: 3tb 40 15X15 SC802-04 marking 6Ct marking eb sc802
Text: SC802-04 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features I Marking • Surface mount device • Lo w V f -CATHODE MARKING - SYMBOL • Super high speed switching • High reliability by planer design /I ■ EB 1 141 - MONTH
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SC802-04
500ns,
marking ya
3tb 40
15X15
SC802-04
marking 6Ct
marking eb
sc802
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