Untitled
Abstract: No abstract text available
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recovery Diode IGBT VRRM = 2200 V VCES = 1800 V VCES = 1700 V IDAVM100 = 150 A IC80 = 80 A IFSM45 = 1100 A VF125 = 3.11 V VCE125 = 3.0 V =
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135-22NO1
IDAVM100
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
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VUB135-22NO1
Abstract: vub135 E72873 135-22NO1
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recovery Diode IGBT VRRM = 2200 V VCES = 1800 V VCES = 1700 V IDAVM100 = 150 A IC80 = 80 A IFSM45 = 1000 A VF125 = 3.11 V VCE125 = 3.0 V =
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135-22NO1
IDAVM100=
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
VUB135-22NO1
vub135
E72873
135-22NO1
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ixys vub 70 -16no1
Abstract: sensor marking code 145A VUB145-16NOXT
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16NO1
VUB145-16NO1
E72873
20101007a
ixys vub 70 -16no1
sensor marking code 145A
VUB145-16NOXT
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145-16NO1
Abstract: VUB145-16NO1 vub 70 ic MARKING QG E72873 ixys vub 70 -16no1 vub14516no1 sensor marking code 145A
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16NO1
VUB145-16NO1
E72873
20101007a
145-16NO1
VUB145-16NO1
vub 70
ic MARKING QG
E72873
ixys vub 70 -16no1
vub14516no1
sensor marking code 145A
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ixys vub 70 -16no1
Abstract: VUB145 VUB145-16NO1 145-16NO1 VUB145-16NOXT E72873 marking ntc 80 ntc application
Text: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16NO1
VUB145-16NO1
E72873
powe00
20101007a
ixys vub 70 -16no1
VUB145
VUB145-16NO1
145-16NO1
VUB145-16NOXT
E72873
marking ntc 80
ntc application
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VUB145-16NOXT
Abstract: fast recovery Diode 1200V 200A
Text: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16NOXT
VUB145-16NOXT
E72873
20110907b
VUB145-16NOXT
fast recovery Diode 1200V 200A
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VUB116-16NOXT
Abstract: E72873
Text: VUB 116-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A
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116-16NOXT
VUB116-16NOXT
E72873
20110907b
VUB116-16NOXT
E72873
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ixys vub 70 -16no1
Abstract: ntc application E72873 VUB116-16NO1 116-16NO1 ixys vub 70 -16
Text: VUB 116-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.76 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 3.5 V = 67 A
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116-16NO1
VUB116-16NO1
E72873
20101007a
ixys vub 70 -16no1
ntc application
E72873
VUB116-16NO1
116-16NO1
ixys vub 70 -16
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VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16NOXT
VUB145-16NOXT
E72873
20110907b
VUB145-16NOXT
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116-16NO1
Abstract: VUB116-16NO1 E72873 resistor 101 vub 70 vub116
Text: VUB 116-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.76 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 3.5 V = 67 A
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116-16NO1
VUB116-16NO1
E72873
20101007a
116-16NO1
VUB116-16NO1
E72873
resistor 101
vub 70
vub116
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vub145-16noxt
Abstract: vub 145-16noxt
Text: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16NOXT
VUB145-16NOXT
E72873
20110307a
vub145-16noxt
vub 145-16noxt
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ixys vub 70 -16no1
Abstract: vub 70 -16
Text: VUB 116-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.76 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 3.5 V = 67 A
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116-16NO1
VUB116-16NO1
E72873
20101007a
ixys vub 70 -16no1
vub 70 -16
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vub 70
Abstract: VUB116-16NOXT
Text: VUB 116-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A
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116-16NOXT
VUB116-16NOXT
E72873
20110302a
vub 70
VUB116-16NOXT
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VUB120-16NO2
Abstract: marking ntc 80
Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V
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VUB120-12NO2
VUB120-16NO2
E72873
20101007a
120-12NO2
120-16NO2
120-12NO2T
120-16NO2T
marking ntc 80
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VUB120-16NOX
Abstract: No abstract text available
Text: VUB 120 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 100 A VCEsat = 2.1 V
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VUB120-12NO2
VUB120-16NO2
E72873
20101007a
120-12NO2
VUB120-12NO2
120-16NO2
VUB120-16NO2
120-12NO2T
VUB120-16NOX
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160-16NO2T
Abstract: VUB160-16NO2 160-12NO2 VUB160-16No2t E72873 VUB160-12NO2 marking ntc 160 vub16016no2 VUB160-16
Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V
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VUB160-12NO2
VUB160-16NO2
E72873
20101007a
160-12NO2
VUB160-12NO2
160-16NO2
VUB160-16NO2
160-12NO2T
160-16NO2T
160-12NO2
VUB160-16No2t
E72873
marking ntc 160
vub16016no2
VUB160-16
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160-16NO2T
Abstract: VUB160-16NO2 VUB160-16NOX
Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V
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VUB160-12NO2
VUB160-16NO2
E72873
20101007a
160-12NO2
160-16NO2
160-12NO2T
160-16NO2T
VUB160-16NOX
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VUB120-16NO2
Abstract: 120-12NO2 120-16NO2T VUB120-12NO2 12016N vub120-16NO2t E72873 Ultrafast Recovery Rectifier Bridge VUB 120 120-16NO2
Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V
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VUB120-12NO2
VUB120-16NO2
E72873
20101007a
120-12NO2
VUB120-12NO2
120-16NO2
VUB120-16NO2
120-12NO2T
120-12NO2
120-16NO2T
12016N
vub120-16NO2t
E72873
Ultrafast Recovery Rectifier Bridge
VUB 120
120-16NO2
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Untitled
Abstract: No abstract text available
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System VRRM Fast Recovery Diode = 2200 V VCES IGBT = 800 V VCES = 700 V IDAVM00 = 50 A IC80 = = 80 A IFSM45 = 000 A VF25 = 3. V VCE25 = 3.0 V
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135-22NO1
IDAVM100
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
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E72873
Abstract: VUB116-16NOXT
Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product
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116-16NOXT
VUB116-16NOXT
E72873
20110907b
E72873
VUB116-16NOXT
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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11-5B2
Abstract: E67349 TLP722 TLP722F VDE0884
Text: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722 : Single circuit 30 V (max) Cathode-Anode Voltage
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TLP722
TLP722
UL1577,
E67349
VDE0884
VDE0884
EN60950,
11-5B2
E67349
TLP722F
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