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    DIODE VR 1200V Search Results

    DIODE VR 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE VR 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HFA45HC120C

    Abstract: No abstract text available
    Text: PD-20375A HFA45HC120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V


    Original     		PDF PD-20375A HFA45HC120C 675nC HFA45HC120C

    HFA45HI120C

    Abstract: No abstract text available
    Text: PD-20374A HFA45HI120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V


    Original     		PDF PD-20374A HFA45HI120C 675nC HFA45HI120C

    HFA35HB120

    Abstract: No abstract text available
    Text: PD-20370 HFA35HB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets


    Original     		PDF PD-20370 HFA35HB120 HFA35HB120

    Untitled

    Abstract: No abstract text available
    Text: SIDC81D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC81D120H8 VR IF


    Original     		PDF SIDC81D120H8 L4061C,

    Untitled

    Abstract: No abstract text available
    Text: SIDC53D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC53D120H8 VR IF


    Original     		PDF SIDC53D120H8 L4059C,

    Untitled

    Abstract: No abstract text available
    Text: PD-20374A HFA45HI120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V


    Original     		PDF PD-20374A HFA45HI120C 675nC device10)

    Untitled

    Abstract: No abstract text available
    Text: PD-20375A HFA45HC120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V


    Original     		PDF PD-20375A HFA45HC120C 675nC device10)

    Untitled

    Abstract: No abstract text available
    Text: PD-20370A HFA35HB120 Ultrafast, Soft Recovery Diode FRED VR = 1200V Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets vF = 3.1V Qrr = 510nC


    Original     		PDF PD-20370A HFA35HB120 510nC 5M-1994. O-254AA.

    HFA35HB120C

    Abstract: No abstract text available
    Text: PD-20371A PRELIMINARY TM HEXFRED HFA35HB120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets


    Original     		PDF PD-20371A HFA35HB120C 370nC HFA35HB120C

    HFA35HB120C

    Abstract: No abstract text available
    Text: PD - 20371A PRELIMINARY TM HEXFRED HFA35HB120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets


    Original     		PDF 0371A HFA35HB120C 370nC HFA35HB120C

    IRFP250 pin out

    Abstract: HFA35HB120 IRFP250 PD-20370A
    Text: PD-20370A HFA35HB120 Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets vF = 3.1V Qrr = 510nC


    Original     		PDF PD-20370A HFA35HB120 510nC 5M-1994. O-254AA. IRFP250 pin out HFA35HB120 IRFP250 PD-20370A

    SIDC06D120F6

    Abstract: No abstract text available
    Text: Preliminary SIDC06D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120F6 1200V IF C Applications:


    Original     		PDF SIDC06D120F6 Q67050-A4183A001 4345M, SIDC06D120F6

    SIDC06D120E6

    Abstract: No abstract text available
    Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:


    Original     		PDF SIDC06D120E6 Q67050-A4122A001 4342P, SIDC06D120E6

    1200v 3A

    Abstract: SIDC03D120H6
    Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:


    Original     		PDF SIDC03D120H6 Q67050-A4156A001 4372S, 1200v 3A SIDC03D120H6

    SIDC03D120F6

    Abstract: No abstract text available
    Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:


    Original     		PDF SIDC03D120F6 Q67050-A4168A001 4375M, SIDC03D120F6

    SIDC08D120F6

    Abstract: No abstract text available
    Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:


    Original     		PDF SIDC08D120F6 Q67050-A4169A001 4355M, SIDC08D120F6

    SIDC08D120F6

    Abstract: No abstract text available
    Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:


    Original     		PDF SIDC08D120F6 Q67050-A4169A001 4355M, SIDC08D120F6

    SIDC06D120E6

    Abstract: No abstract text available
    Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:


    Original     		PDF SIDC06D120E6 Q67050-A4122A001 4342P, SIDC06D120E6

    HFA40HF120C

    Abstract: No abstract text available
    Text: PD - 91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC


    Original     		PDF HFA40HF120C 370nC dev10) HFA40HF120C

    HFA40HF120C

    Abstract: No abstract text available
    Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC


    Original     		PDF PD-91797 HFA40HF120C 370nC HFA40HF120C

    Untitled

    Abstract: No abstract text available
    Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC


    Original     		PDF PD-91797 HFA40HF120C 370nC

    SIDC03D120F6

    Abstract: No abstract text available
    Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:


    Original     		PDF SIDC03D120F6 Q67050-A4168A001 4375M, SIDC03D120F6

    SIDC03D120H6

    Abstract: No abstract text available
    Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:


    Original     		PDF SIDC03D120H6 Q67050-A4156A001 4372S, SIDC03D120H6

    HFA40HF120

    Abstract: PD203
    Text: PD-20376 HFA40HF120 HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 3.1V Qrr = 510 nC CATHODE


    Original     		PDF PD-20376 HFA40HF120 HFA40HF120 PD203