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    DIODE V6 ON Search Results

    DIODE V6 ON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE V6 ON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA4E1340

    Abstract: MA4E1340A-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E1340 Series V6 Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 70 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package


    Original     		PDF MA4E1340 OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E1340A-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143

    MA4E1339

    Abstract: MA4E1339A-1141T MA4E1339A-1146T MA4E1339A1-287T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T diode 1-35 L V6
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E1339 Series V6 Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 20 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Packages


    Original     		PDF MA4E1339 OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E1339A-1141T MA4E1339A-1146T MA4E1339A1-287T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T diode 1-35 L V6

    PIN diode MACOM SPICE model

    Abstract: MADP-000402-12530P MADP-000402-12530G MADP000402 MA4SPS402 HP4291A M513
    Text: MA4SPS402 SURMOUNTTM PIN Diode RoHS Compliant Rev V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance


    Original     		PDF MA4SPS402 MADP-000402-12530P PIN diode MACOM SPICE model MADP-000402-12530P MADP-000402-12530G MADP000402 MA4SPS402 HP4291A M513

    AT10-0019

    Abstract: AT10-0019-TB AT10-0019TR M513 MAAV-007088-000100
    Text: AT10-0019 PIN Diode Based Variable Attenuator, 50 - 1000 MHz Rev. V6 Features • • • • • • Functional Schematic High Dynamic Range: 42dB Typical Flat Attenuation vs. Frequency High P1dB Compression Operates on a Single +5V Supply: 50 Ohm Nominal Impedance


    Original     		PDF AT10-0019 SOW-16 AT10-0019 AT10-00sed AT10-0019-TB AT10-0019TR M513 MAAV-007088-000100

    MA4E2054E-1068T

    Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS


    Original     		PDF MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E2054E-1068T LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T equivalent of v6 surface mount diode DIODE 1581

    Untitled

    Abstract: No abstract text available
    Text: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features Rev. V6 Common Case styles Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity


    Original     		PDF MA46410 MA46485 MA46450, MA46470 MA46450

    MASW-001100-1190

    Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G
    Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt


    Original     		PDF MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G

    Untitled

    Abstract: No abstract text available
    Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs


    Original     		PDF MA4SW410 30dBm MA4SW410

    MASW-001100-1190

    Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
    Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation


    Original     		PDF MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512

    Untitled

    Abstract: No abstract text available
    Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs


    Original     		PDF MA4SW110 MA4SW210 MA4SW310 50MHz 20GHz 30dBm MA4SW110 MA4SW110,

    marking code V6 diode

    Abstract: V6 marking code diode SMD Diode V6 marking code V67D marking code V6 rectifier DIODE D1F60 diode marking v6 V6 7D marking code V6 7d marking v6 diode
    Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE D1F60 Unit : mm Weight : 0.058g （typ.） Package：1F 600V 1A 特長 ① • 耐湿性に優れ高信頼性 Feature V6 7D カソードマーク


    Original     		PDF D1F60 J534-1 marking code V6 diode V6 marking code diode SMD Diode V6 marking code V67D marking code V6 rectifier DIODE D1F60 diode marking v6 V6 7D marking code V6 7d marking v6 diode

    SMD Diode V6 marking code

    Abstract: DIODE D1F60 shindengen rectifier marking code V6 rectifier diode marking v6 SMD MARK v6 Rectifier Diode mark V6 Shindengen catalog SMD Rectifier V6 smd diode marking code jl an
    Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE D1F60 Unit : mm Weight : 0.058g （typ.） Package：1F 600V 1A 特長 ① • 耐湿性に優れ高信頼性 Feature V6 7D カソードマーク


    Original     		PDF D1F60 D1F60 SMD Diode V6 marking code DIODE D1F60 shindengen rectifier marking code V6 rectifier diode marking v6 SMD MARK v6 Rectifier Diode mark V6 Shindengen catalog SMD Rectifier V6 smd diode marking code jl an

    DIODE V6 SMD

    Abstract: smd diode v6 smd V6 diode M2F60 SMD Rectifier V6 SMD MARK v6 DIODE SMD 33 v6 DIODE SMD Mark V6 Rectifier Diode mark V6
    Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M2F60 Unit : mm Weight : 0.072g（typ.） Package：M2F 600V 1.2A 品名略号 Type No. カソードマーク Cathode mark 特長 V6 196 ① • 小型 SMD


    Original     		PDF M2F60 1mst10ms DIODE V6 SMD smd diode v6 smd V6 diode M2F60 SMD Rectifier V6 SMD MARK v6 DIODE SMD 33 v6 DIODE SMD Mark V6 Rectifier Diode mark V6

    V67D

    Abstract: d1F60 V6 7D smd diode 600v SMD 157 diode DIODE D1F60 Rectifier Diode mark V6
    Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE D1F60 Unit : mm Weight : 0.058g（typ.） Package：1F 600V 1A 特長 ① • 耐湿性に優れ高信頼性 Feature V6 7D カソードマーク


    Original     		PDF D1F60 V67D d1F60 V6 7D smd diode 600v SMD 157 diode DIODE D1F60 Rectifier Diode mark V6

    smd diode v6 59

    Abstract: No abstract text available
    Text: 面実装デバイス アレイ型 ツインダイオード Surface Mounting Device Diode Array Twin Diode •外形寸法図 OUTLINE DIMENSIONS Package：1Z Unit : mm Weight：0.13g（typ.） ④ ① S1ZA□ （1.2） ③ ② （1.2） V6 064D 管理番号（例）


    Original     		PDF 25unless wave50Hz smd diode v6 59

    Untitled

    Abstract: No abstract text available
    Text: MA4ST1200 Series Low Tuning Voltage / Low Rs Silicon Hyperabrupt Varactor Diode M/A-COM Products Rev. V6 Features SC-70 3 lead • Low Series Resistance at Low Tuning Voltages • High Capacitance Ratio at Low Tuning Voltages • Surface Mount Plastic Packages : SC-79, SOD323, SC-70 ( 3L )


    Original     		PDF MA4ST1200 SC-70 SC-79, OD323, OD-323 SC-79

    MASW-000553-13220G

    Abstract: macom rf switch MASW-000553 macom pin diode application
    Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state


    Original     		PDF -10mA MASW-000553-13220G macom rf switch MASW-000553 macom pin diode application

    Untitled

    Abstract: No abstract text available
    Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES •     Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption


    Original     		PDF 50GHz

    MA4AGSW3

    Abstract: 10GHZ M541
    Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES • Ultra Broad Bandwidth: 50 MHz to 50 GHz  Functional Bandwidth : 50 MHz to 70 GHz  0.8 dB Insertion Loss,  31 dB Isolation at 50 GHz  Low Current consumption.  -10mA for low loss state


    Original     		PDF -10mA MA4AGSW3 10GHZ M541

    Untitled

    Abstract: No abstract text available
    Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance


    Original     		PDF MASW-002103-1363 MASW-002103-1363

    Untitled

    Abstract: No abstract text available
    Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance


    Original     		PDF MASW-002103-1363 MASW-002103-1363

    diode marking v6

    Abstract: No abstract text available
    Text: Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS •      Low RDS on 1 Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V


    Original     		PDF BUY25CS54A-01 diode marking v6

    BUY25CS12J-01

    Abstract: No abstract text available
    Text: Data Sheet BUY25CS12J-01 HiRel RadHard Power-MOS •      Low RDS on 1 Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V


    Original     		PDF BUY25CS12J-01 SMD05 BUY25CS12J-01

    diode V6

    Abstract: v6 diode diode v6 98
    Text: Part Number: TNI12W T-1 3/4 5mm INFRARED EMITTING DIODE www.SunLED.com Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).


    Original     		PDF TNI12W SDSA0747 diode V6 v6 diode diode v6 98