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    DIODE UM 42A Search Results

    DIODE UM 42A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE UM 42A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba emmc 4.4

    Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
    Text: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.


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    PDF SCE0008G E-28831 SCE0008H toshiba emmc 4.4 toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga

    APT0502

    Abstract: No abstract text available
    Text: APT58M50JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


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    PDF APT58M50JCU2 OT-227) APT0502

    APT0502

    Abstract: 20A 100 V ISOTOP
    Text: APT58M50JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery


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    PDF APT58M50JCU3 OT-227) APT0502 20A 100 V ISOTOP

    Untitled

    Abstract: No abstract text available
    Text: APT58M50JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


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    PDF APT58M50JCU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT58M50JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery


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    PDF APT58M50JCU3 OT-227)

    ps 4512 diode

    Abstract: SS44A P61089 PS-4512 diode
    Text: T1SP61089 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS NOVEMBER 1995 - R EVEED JAN U A W 199« PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • • Dual Voltage-Programmable Protectors - Wide 0 to -80 V Programming Range - Low 5 mA max. Gate Triggering Current


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    PDF T1SP61089 TISP61089 TISP61089. ps 4512 diode SS44A P61089 PS-4512 diode

    international rectifier NE 22

    Abstract: No abstract text available
    Text: PD - 9.1503B International IGR Rectifier IRFP150N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V R ü S o n = 0.03612


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    PDF 1503B IRFP150N O-247 international rectifier NE 22

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    Untitled

    Abstract: No abstract text available
    Text: International H>iRectifier_ PD - 5.028 CPU165MF Fast IGBT IG BTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz


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    PDF 10kHz) CPU165MF 360Vdc, C-139 C-140

    1N5648

    Abstract: LN5644 11 p IN5662A 1N5645 1N5629 1N5629A 1N5630 1N5630A 1/DIODE 1n564 1N5631A
    Text: Zener Type No. Zene Voltage tlzT Volts @ mA Max. Zener Impedance @ Izi Ohms Zener Voltage Tolerance 1N5629 1N5629A 1N5630 1N5630A 6.8 6.8 7.5 7.5 10 10 10 10 1N5631 1N5631A 1N5632 1N5632A 1N5633 1N5633A 1N5634 1N5634A 1N5635 1NS635A 1N5636 1N5636A 1N5637 1N5637A


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    PDF 1N5629 1N5629A 1N5630 1N5630A 500wait: DO-13 1N5631 1N5631A 1N5632 1N5632A 1N5648 LN5644 11 p IN5662A 1N5645 1N5630A 1/DIODE 1n564

    NDS9925A

    Abstract: No abstract text available
    Text: N July 1 9 9 6 N D S9925A Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features T h e se N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effect tra n sis to rs a re p ro d u c e d u sin g N a tio n a l's p ro p rie ta ry , h ig h cell d e n sity , DMOS te c h n o lo g y .


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    PDF NDS9925A NDS9925 0D33347 NDS9925A

    Untitled

    Abstract: No abstract text available
    Text: RFP42N03, RF1S42N03, RF1S42N03SM 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A,30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching


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    PDF RFP42N03, RF1S42N03, RF1S42N03SM RF1S42N03 RF1S42N03SM TA49235. 0-025i2 O-263AB

    lg66a

    Abstract: e78996 india E78996 rectifier module IRFK6H450 hex-pak IRFK6J450
    Text: Bulletin E27113 International S Rectifier IRFK6H450JRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.


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    PDF E27113 IRFK6H450 IRFK6J450 E78996. O-240 CH-8032 IL60067. NJ07650. FL32743. CA90245. lg66a e78996 india E78996 rectifier module hex-pak IRFK6J450

    431AJ

    Abstract: 8 pin ic 3844 for 5 volts 45BJ 8 pin IC UC3842 smps design Siemens pwm ic 3842 pin diagram of ic 3843 circuit diagram smps power supply using IC 3842 a IC38C44-1 IC38C45-1
    Text: MICI 8C42/M1C18HC42 Family BiCMOS Current Mode Switching Regulator Preliminary Information General Description Features The MIC18C42 family of devices are fixed frequency, high performance current mode PWM controllers. Although fully pin compatible with the bipolar 3842 family of controllers, the


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    PDF 8C42/M1C18HC42 MIC18C42 100mV IC18C42/18HC42 MIC38C43 MIC5022 2200pF 100kHz 431AJ 8 pin ic 3844 for 5 volts 45BJ 8 pin IC UC3842 smps design Siemens pwm ic 3842 pin diagram of ic 3843 circuit diagram smps power supply using IC 3842 a IC38C44-1 IC38C45-1

    arc welding

    Abstract: DIODE BUZ LE17 buz46
    Text: 3 7E SEMELAB LTD 0133107 D 0000257 b • SflLB ' S O LS ' S E M E L A B ^ 6 | BUZ 46 M O S POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SMPS • ARC WELDING • D.C. MOTOR CONTROL PIN 1-G a te PIN 2 -S o u rc e C A SE -D rain


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    PDF T03Thin Tj-150 T-39-11 arc welding DIODE BUZ LE17 buz46

    Untitled

    Abstract: No abstract text available
    Text: u v m L T C 1 5 3 8 -A U X / L T C 1539 . TECHNOLOGY D ual High Efficiency, Low Noise, Synchronous Step-Down S w itching R eg ulators F€ATUft€S D C S C R IP T IO n • M aintains Constant Frequency at Lo w Output Currents ■ Dual N-Channel M O S F E T Synchronous Drive


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    PDF

    APT5012LNR

    Abstract: max8700 APT5012LN APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR
    Text: ADVANCED RO W ER Te c h n o l o g y O D O APT5012LN R s PO W ER M O S IV® 500V 42.0A 0.12^ A V A LA N C H E RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T I N G S A ll Ratings: T c = 2 5 CC un less otherw ise sp ecified .


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    PDF APT5012LN APT5012LNR max8700 APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    f42n03l

    Abstract: 2n03l 42N03L F42N03 RFP42N03L T0263AB 32 N03L RF1S42N03L RF1S42N03LSM F1S42N
    Text: H A F R F R I S semi conductor RFP42N03L, R F 1 S 4 2 N03L, R F1S42N 03LSM 42A, 30V, 0.025Q, N-Chan nel Logic Level Power M O S F E T s March 1997 F e a tu re s D e s c rip tio n • 4 2 A ,3 0V The RFP42N03L, RF1S42N03L, and RF1S42N03LSM are N-Channel power MOSFETs manufactured using the


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    PDF RFP42N03L, F1S42N 03LSM RF1S42N03L, RF1S42N03LSM TA49030. 1-800-4-H f42n03l 2n03l 42N03L F42N03 RFP42N03L T0263AB 32 N03L RF1S42N03L

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D APT5012LNR O S POWER MOS IV 500V 42.0A 0.12Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified. Parameter


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    PDF APT5012LNR O-264AA MIL-STD-750

    APT5012LNB

    Abstract: APT5012LNR APT5012L
    Text: ADVANCED PO W ER Te c h n o lo g y O D APT5012LNR Ô S 3* WER MOS 500V 42.0A 0.12Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol VDSS 'o ' dm VGS VGSM All Ratings: T c = 25°C unless otherwise specified.


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    PDF APT5012LNR APT5012LNR MIL-STD-750 -264A APT5012LNB APT5012L

    Untitled

    Abstract: No abstract text available
    Text: 3 7E SEMELAB LTD D 0133107 0D00257 b • s iilb ' Æ ]L/ SEMELAB *BUZ 46 ’ MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SMPS • ARC WELDING • D.C. MOTOR CONTROL PIN 1-G a te PIN 2 -S o u rc e C A S E -D rain


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    PDF 0D00257 150PC

    APT5012LNR

    Abstract: diode AR s1 56 XS16
    Text: A d van ced P o w er Te c h n o l o g y O D APT5012LNR O s POWER MOS IV‘ 500V 42.0A 0.12a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM R A T IN G S Symbol V DSS 'dm V GS V GSM All Rutinn*- T - Parameter Drain-Source Voltage


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    PDF APT5012LNR MIL-STD-750 O-264AA diode AR s1 56 XS16

    ZYT 11 FD

    Abstract: rx5re RH5RL50AA-T1 RX5RL20A CI 4583 5RL30A
    Text: K D t ë t D Q VOLTAGE REGULATOR l RX5RL SERIES •OUTLINE The RX5RL Series are voltage regulator ICs w ith high accuracy o utput voltage and ultra-low quiescent c u r­ re n t by CMOS process. E ach of these ICs consists of a voltage reference unit, an e rror amplifier, a driver t r a n ­


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    PDF OT-89 OT-23-5 RX5RL30A 5RL50A 7744bciD 00D2bll ZYT 11 FD rx5re RH5RL50AA-T1 RX5RL20A CI 4583 5RL30A