SF10A400HD
Abstract: sF10A400 SF10A400H marking code 1A diode
Text: SF10A400HD Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features High voltage and high reliability Ultrafast reverse recovery time High speed switching Low power loss and High efficiency Halogen-free component and RoHS compliant device
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SF10A400HD
O-252
SF10A400HD
KSD-D6O022-000
sF10A400
SF10A400H
marking code 1A diode
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SF10A400HD
Abstract: No abstract text available
Text: SF10A400HD Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features High volt age and high reliabilit y Ult rafast reverse recovery t im e High speed swit ching Low pow er loss and High efficiency Halogen-free component and RoHS compliant device
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SF10A400HD
O-252
SF10A400HD
KSD-D6O022-001
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Untitled
Abstract: No abstract text available
Text: PD - 95679A HFA06PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 1 Benefits VR = 1200V BASE CATHODE CATHODE 4 VF typ. * = 2.4V
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5679A
HFA06PB120PbF
116nC
HFA06PB120
HFA06PB120PbF
O-247AC
O-247
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B60S
Abstract: HFA04TB60S IRFP250
Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC
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PD-96035
HFA04TB60SPbF
HFA04TB60S
HFA04T
B60S
IRFP250
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SF10A600HPI
Abstract: No abstract text available
Text: SF10A600HPI Semiconductor Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply • Free Wheeling diode and snubber circuit 1 Features 2 3 1. Anode 2. Cathode 3. Anode • Ultra-fast reverse recovery time: trr=30ns Max.
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SF10A600HPI
O-220F-3L
SF10A600HPI
KSD-D0O012-000
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B120
Abstract: HFA08TB120 IRFP250
Text: PD-95736 HFA08TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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PD-95736
HFA08TB120PbF
140nC
O-220AC
HFA08TB120
ad08TB120PbF
O-220,
B120
IRFP250
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irfp250 applications
Abstract: marking code C76 HFA08PB120 IRFP250
Text: PD - 95680A HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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5680A
HFA08PB120PbF
140nC
O-247AC
HFA08PB120
cons20PbF
O-247,
irfp250 applications
marking code C76
IRFP250
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transistor SMD MARKING CODE HF
Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A
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PD-96036
HFA06TB120SPbF.
116nC
HFA06TB120S
O-220
transistor SMD MARKING CODE HF
smd code HF transistor
TRANSISTOR SMD MARKING CODE WT
AAAA series SMD transistor
smd code HF diode
TRANSISTOR SMD MARKING CODE X D
AAAA
transistor smd code marking tm
SMD MARKING CODE transistor WW
marking code dt2 transistor
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p035h
Abstract: HFA16PA120CPBF HFA16PA120C HFA16PA60C IRFP250
Text: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A
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PD-95974
HFA16PA120CPbF
O-247AC
HFA16PA120C
O-247,
p035h
HFA16PA120CPBF
HFA16PA60C
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 95680 HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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HFA08PB120PbF
140nC
O-247AC
HFA08PB120
O-247,
O-247AC
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B120
Abstract: HFA06TB120 IRFP250 HFA06TB120PBF
Text: PD-95734 HFA06TB120PbF HEXFRED TM Ultrafast, Soft Recovery Diode Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 4 IF AV = 6.0A Qrr (typ.)= 116nC 2 1 Benefits
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PD-95734
HFA06TB120PbF
116nC
O-220AC
HFA06TB120
O-220,
B120
IRFP250
HFA06TB120PBF
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Untitled
Abstract: No abstract text available
Text: FFP30U60DN FFP30U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits
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FFP30U60DN
O-220
FFP30U60DNTU
O-220
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600v 10A ultra fast recovery diode to220
Abstract: No abstract text available
Text: FFP10U60DN FFP10U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits
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FFP10U60DN
O-220
FFP10U60DNTU
O-220
600v 10A ultra fast recovery diode to220
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Untitled
Abstract: No abstract text available
Text: FFP05U60DN FFP05U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits
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FFP05U60DN
O-220
FFP05U60DNTU
O-220
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mbn400c20
Abstract: No abstract text available
Text: IGBT MODU ODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.
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MBN400C20
000cycles)
400mA
100KHz
150nH
150nH,
PDE-N400C20-0
mbn400c20
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Untitled
Abstract: No abstract text available
Text: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC
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PD-96035
HFA04TB60SPbF
HFA04TB60S
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 95679A HFA06PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 1 Benefits VR = 1200V BASE CATHODE CATHODE 4 VF typ. * = 2.4V
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5679A
HFA06PB120PbF
116nC
O-247AC
HFA06PB120
08-Mar-07
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MBN1800D17C
Abstract: No abstract text available
Text: IGBT MODU ODU L E MBN1800D17C Silicon N-channel IGBT TENTATIVE SPECIFICATION OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles 6-M8 * low noise due to built-in free-wheeling 3-M4 diode - ultra soft fast recovery diode(USFD).
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MBN1800D17C
000cycles)
800mA
100KHz
100nH
100nH,
PDE-N1800D17C-0
MBN1800D17C
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MBN600C33A
Abstract: MBN600C33
Text: IGBT MODU ODULE MBN600C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. 2-M8 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 4-φ5.8 diode - ultra soft fast recovery diode(USFD).
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MBN600C33A
000cycles)
600mA
100KHz
150nH
150nH,
PDE-N600C
MBN600C33A
MBN600C33
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MBN1200D33A
Abstract: ic 555N MBN1200D33
Text: IGBT MODU ODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles 6-M8 * low noise due to built-in free-wheeling 3-M4 diode - ultra soft fast recovery diode(USFD).
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MBN1200D33A
000cycles)
200mA
100KHz
100nH
100nH,
PDE-N1200D33A-0
MBN1200D33A
ic 555N
MBN1200D33
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800A DC diode
Abstract: MBL800E33D igbt 800A
Text: Spec.No.IGBT-SP-03009 R1 IGBT MODULE MBL800E33D Preliminary SPEC. Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70℃,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-03009
MBL800E33D
000cycles)
120nH,
125oC
800A DC diode
MBL800E33D
igbt 800A
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ultra fast recovery diode
Abstract: SF10A600H
Text: SF10A600H Semiconductor Ultra Fast Recovery Diode Applications • High speed switching and rectification • Switching mode power supply • Free wheeling diode and snubber circuit Features • Ultra-fast reverse recovery time: trr=50ns Max. • Low forward voltage & low reverse current
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SF10A600H
O-220F-2L
KSD-D0Q005-000
ultra fast recovery diode
SF10A600H
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MBN600C20
Abstract: 600A igbt 100khz
Text: IGBT MODU ODULE MBN600C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 2-M8 * High thermal fatigue durability. 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
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MBN600C20
000cycles)
125erse
600mA
100KHz
150nH
150nH,
PDE-N600C20-0
MBN600C20
600A igbt 100khz
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ic 555N
Abstract: MBN1200D25
Text: IGBT MODU ODU L E MBN1200D25B Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles 6-M8 * low noise due to built-in free-wheeling 3-M4 diode - ultra soft fast recovery diode(USFD).
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MBN1200D25B
000cycles)
200mA
100KHz
100nH
100nH,
PDE-N1200D25B-0
ic 555N
MBN1200D25
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