DPG30IM300PC
Abstract: No abstract text available
Text: DPG30IM300PC HiPerFRED² = High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number Backside: cathode 1 3 Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour
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DPG30IM300PC
60747and
20110607b
DPG30IM300PC
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SLD322V-1
Abstract: SLD300 SLD322V SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-3
Text: ,UJNÏ I_SLD322V High Power Density 0.5 W Laser Diode Description Package Outline_Unit : mm The SLD322V is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the P t t9 f i n d SLD300 Series, this laser diode has a high brightness
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SLD322V
SLD322V
SLD300
SLD322V-1
SLD322V-2
SLD322V-21
SLD322V-24
SLD322V-3
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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Untitled
Abstract: No abstract text available
Text: bbSB'Ol D0242S4 250 « A P X N AMER PHILIPS/DISCRETE BAS32L b7E D J V HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated
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D0242S4
BAS32L
BAS32L
OD-80C
100X1
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Untitled
Abstract: No abstract text available
Text: Nov. 1995 Surface Mountable Single-Mode LD Module QD-8305 Description NEC's new surface-mount, low-cost laser diode module is designed for use in fiber optic communications applications such as ATM, FITL and SONET. The laser diode module consists o f a laser diode and a monitor photo diode. This module can be used with a
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QD-8305)
-20dB)
OD8305
OD-8305
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Untitled
Abstract: No abstract text available
Text: ERD24-06-ERD74-06I12A •600V • : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated chip • High reverse voltage capability. • Stud mounted : Applications • Sw itching power supplies • Free-wheel diode • Sn u b b e r diode •
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ERD24-06-ERD74-06I12A
ERD24-06,
ERD74-06
50HzJE
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Ea 1530 A
Abstract: No abstract text available
Text: HL1566AF 1.55 im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 jim InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
ST-10
48832G
Ea 1530 A
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Untitled
Abstract: No abstract text available
Text: ,N AMER '- ° ~f PHILIPS/DISCRETE - — — ObE D - — - bbSBTBl 0015441 b BAS32 J T V - O f - P l HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. . This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope w ith tin-plated metal discs at
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BAS32
BAS32
OD-80
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN2618B _ SVC341 Diffused Junction Type Silicon Diode Varactor Diode for AM Receiver Electronic Tuning U se F eatu res • Twin type varactor diode for low-voltage AM electronic tuning use. •High capacitance ratio. ■Excellent linearity of C-V characteristic.
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EN2618B
SVC341
SVC341-applied
SVC341
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94v0 ys-2c circuit board
Abstract: 94v0 ys 2
Text: I cO pp I MWTITcCp r L uJ ^ Today's Results March 20, 1998 400 Watt Asymmetrical TVS Diode for Extended Common-Mode RS-485 SM 712 T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SM712 transient voltage suppressor TVS diode
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RS-485
L805-498-2111
SM712
OT-23
94v0 ys-2c circuit board
94v0 ys 2
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CL67
Abstract: 32MHz quartz RESONATOR 550KQ
Text: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output
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250mA
500/iA
CL67
32MHz quartz RESONATOR
550KQ
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1S2638
Abstract: Diode UJ VARIABLE capacitor fm afc diode AFC diode DIODE MARK 35 200 pF air variable capacitor SEMTECH* diode
Text: 1S2638 TUNER AFC DIODE AFC Diode The 1S2638 is a variable Capacitor Diode intended for AFC Applications, VHF TV Applications, FM Receivers. Air Craft Communications Gear, and other receivers in the 1 M Hz to 500 MHz. max. 1.90 E co_ Cathode M ark m ax. 0.520
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1S2638
1S2638
DO-35
100MHz
SEMTEC75
Diode UJ
VARIABLE capacitor
fm afc diode
AFC diode
DIODE MARK 35
200 pF air variable capacitor
SEMTECH* diode
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CD621215
Abstract: No abstract text available
Text: CD62_ _15 CD67_15_ Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 150 Amperes/1600 Volts Description: CD62 15, CD67 15 SCR/Diode POW-R-BLOK™ Module 150 Amperes/1600 Volts Powerex SCR/Diode Modules are
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Amperes/1600
MAX/10
CD621215
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ESC021M-15
Abstract: T-fl-30
Text: ESC021M-15 5a FAST RECOVERY DIODE ' Features D am per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. • W)tt\1WfibVkZtifc.7iV*-i\rY9'4'7 Insulated package by fully molding. m m m &m • ¿U-JfctDfcabiilEA* *.'
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ESC021M-15
T-fl-30
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y 8 Back of Case -Cathode - APT30D40S - 1 400V 30A 2 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT30D40S
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amd FX PIN LAYOUT
Abstract: G701
Text: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
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200kHz
250mA
amd FX PIN LAYOUT
G701
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AX057
Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
Text: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code
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AX057
AX057
marking code 9d
D1NL4
DATE CODE FOR NITM
MU diode MARKING CODE
l4 marking code diode
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB D • ñ3 SEMICON 004Ö3GÖ 0QQD503 ñ T - Z 5 -O Í Modules with reverse conducting Module mit rückwärtsleitenden Thyristoren Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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0QQD503
5x10DIN7985
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Photo diode circuit diagram
Abstract: Diode UJ Photo Module PHOTO diode
Text: Nov. 1995 Surface Mountable PD Module OD-8451 Description NEC's new surface-mount, low-cost photo diode module is designed for use in fiber optic communications applications such as ATM, FITL and SONET. The photo diode module consists of a photo diode. This module can be used with a detachable pigtail for enhanced
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OD-8451)
30sec.
1300nm
1550nm
OD8451
OD-8451
Photo diode circuit diagram
Diode UJ
Photo Module
PHOTO diode
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marking 9D
Abstract: D1NL40U AX057 ITT diode marking code 9d diode MARKING CODE 3J
Text: Super Fast Recovery Diode Axial Diode •fttg H Package D1NL40U OUTLINE AX057 * I 400V 0.9A 2 UJ Feature 2.6 </> • Low Noise • trr=25ns • trr=25ns *2 G> Main Use • Z'l • • • • • O A , 8? • jS fl.F A Unit • mm W eight 0. 19k T y p Switching Regulator
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D1NL40U
AX057
CJ533-1
marking 9D
ITT diode
marking code 9d
diode MARKING CODE 3J
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DIODE marking s6 code
Abstract: DIODE marking TY
Text: Schottky Barrier Diode Axial Diode Wtm D1NS6 OUTLINE Package : AX057 Unit-mm Weight 0.19g Typ 60 V 1A Feature UJ 02.6 • Tj=150°C • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • P r r s m Rating • Switching Regulator • DC/DC nyjt- l? • m
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AX057
DIODE marking s6 code
DIODE marking TY
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diode DB 3 C
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm O PTICA L FIB ER COM M UN ICATION S InG aA sP PH A SE-SH IFTED D FB-D C-PBH LA SER DIODE M ODULE DESCRIPTION NDL5653P ¡s a 1550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola
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NDL5653P
L5653P
diode DB 3 C
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MRR 50-10
Abstract: mrr 50-08 MRR50-12 DIODE 73 MRR35 ABB thyristor modules mrr50 thyristor modules mrr ASEA thyristor GTO thyristor
Text: A S E A B R O W N /A B B ñ3 S EM IC O N D l Q04Ö3GÖ 0QQD503 ñ T - Z 5 -O Í Modules with reverse conducting Module mit rückwärtsleitenden Thyristoren Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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GRR90.
MRR 50-10
mrr 50-08
MRR50-12
DIODE 73
MRR35
ABB thyristor modules
mrr50
thyristor modules mrr
ASEA thyristor
GTO thyristor
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