Q265
Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
Text: MATCHED DIODE QUADS Transitron's efficiency E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward charac- teristics. Individual diodes allow the user maximum circuit configurations versatility. TABLE I SILICON DIODE TYPES
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1N485B
1N648
1N914B
1N3066
1N3066
1N270
Q265
diode germanium 1n270
1N695
transitron matched diodes
Q252
transitron 1n648
S555G
silicon diode and germanium
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Untitled
Abstract: No abstract text available
Text: 18Resistors Channel Schottky Diode Termination Network 18 Channel Schottky Diode Make Possible Termination Network QDN003 Series 18 Channel Schottky Diode Termination Network • RoHS compliant and Sn/Pb terminations available • Reduces overshoot and undershoot for all data line types
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QDN003
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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current limiting diodes
Abstract: constant current diode CCL1000 CCL0035 CCL5750 "Constant Current diode"
Text: What is a Current Limiting Diode? Outline below are typical CLD Characteristics, Symbols, Parameters and Definitions. A Current Limiting Diode, also known as a “Current Regulating Diode” or a “Constant Current Diode”, performs quite a unique function. Similar to a zener diode,
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90-second
current limiting diodes
constant current diode
CCL1000
CCL0035
CCL5750
"Constant Current diode"
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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DZ800S17K3
Abstract: FF800R17KE3
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data
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DZ800S17K3
DZ800S17K3
FF800R17KE3
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Design With PIN Diodes
Abstract: No abstract text available
Text: APPLICATION NOTE Design With PIN Diodes Introduction The PIN diode finds wide usage in RF, UHF, and microwave circuits. At these types of frequencies, a PIN diode is fundamentally a device with an impedance controlled by its DC excitation. A unique feature of the PIN diode is its ability to control
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200312D
Design With PIN Diodes
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MOZ 23
Abstract: DD1000S33HE3 48 H diode
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
MOZ 23
DD1000S33HE3
48 H diode
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DD1000S33
Abstract: FZ1000R33HE3
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
DD1000S33
FZ1000R33HE3
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Untitled
Abstract: No abstract text available
Text: BAW56-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type
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BAW56-V
BAL99,
BAV99,
BAV70
AEC-Q101
OT-23
GS18/10K
10K/box
GS08/3K
15K/box
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DZ800S17K3
Abstract: No abstract text available
Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DZ800S17K3
DZ800S17K3
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Untitled
Abstract: No abstract text available
Text: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151WS-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-323
GS18/10
GS08/3
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Untitled
Abstract: No abstract text available
Text: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151WS-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-323
GS18/10
GS08/3
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Untitled
Abstract: No abstract text available
Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V.
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
GS18/10
GS08/3
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Untitled
Abstract: No abstract text available
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151W-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4151W-V
1N4151W-V-GS18
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SOT23 DIODE marking CODE AV
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
SOT23 DIODE marking CODE AV
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Untitled
Abstract: No abstract text available
Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V.
AEC-Q101
2002/95/EC
2002/96/EC
GS18/10
GS08/3
OT-23
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Untitled
Abstract: No abstract text available
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151W-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
1N4151W-V
1N4151W-V-GS18
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Untitled
Abstract: No abstract text available
Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V.
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
GS18/10
GS08/3
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Untitled
Abstract: No abstract text available
Text: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151WS-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-323
GS18/10
GS08/3
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
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Untitled
Abstract: No abstract text available
Text: SftOPTEK Product Bulletin HCR4148 September 1996 Surface Mount Switching Diode Types HCR4148D, HCR4148M, TX, TXV HCR4148D Dual Isolated Switching Diode HCR4148M Single Switching Diode Features Absolute Maximum Ratings (T a = 25° C unless otherwise noted
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OCR Scan
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PDF
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HCR4148
HCR4148D,
HCR4148M,
HCR4148D
HCR4148M
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Untitled
Abstract: No abstract text available
Text: What is a Current Lim iting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu lating Diode” or a "Constant Current Diode," performs quite a unique function. Sim ilar to a zener diode, which
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OCR Scan
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PDF
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90-second
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MMAD1108
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8-Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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OCR Scan
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MMAD1108
MMAD1108
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