Diode SE-05
Abstract: QAL-785-04-F-18-1 QAL-785-04-F-18-2 QAL-785-04-F-18-3 780nm laser diode
Text: QAL-785-04-F-18-1/2/3 : AIGaAs Laser Diode [ FEATURES ] [ OVERVIEW ] [ APPLICATION ] - Visible Light Output : λp = 780nm - Optical Power Output : 5mW CW - Package Type : TO-18 5.6mmQ^ - Built-in Photo Diode for Monitoring Laser Diode QAL-780-04-D-18-1/2/3 is a MOCVD grown 780nm band
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QAL-785-04-F-18-1/2/3
780nm
QAL-780-04-D-18-1/2/3
780nm
QAL-785-04-F-18-1/2/3
22MAX
66MAX
Diode SE-05
QAL-785-04-F-18-1
QAL-785-04-F-18-2
QAL-785-04-F-18-3
780nm laser diode
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1N6264
Abstract: No abstract text available
Text: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM
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1N6264
1N6264
DS300276
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L14G1
Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
Text: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package
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1N6266
1N6266
DS300278
L14G1
l14g1 equivalent
infrared led
L14G2 circuit design
L14G2 application note
Phototransistor L14G2
fairchild make INFRARED EMITTING DIODE TO18
L14G1 phototransistor
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1N6265
Abstract: No abstract text available
Text: 1N6265 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM
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1N6265
1N6265
DS300277
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5082-3340
Abstract: hp pin diode
Text: 5082-3340 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: The ASI 5082-3340 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3340
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ASI30254
5082-3340
hp pin diode
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20 GHz PIN diode
Abstract: hp pin diode 10 GHz pin diode 3041 "Direct Replacement" hp 5082 7650 pin diode microstrip 6 GHz PIN diode
Text: 5082-3041 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The 5082-3041 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3041
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ASI30253
20 GHz PIN diode
hp pin diode
10 GHz pin diode
3041
"Direct Replacement"
hp 5082 7650
pin diode microstrip
6 GHz PIN diode
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5082-2711
Abstract: No abstract text available
Text: 5082-2711 MEDIUM BARRIER SCHOTTKY DIODE PACKAGE STYLE 19 DESCRIPTION: The ASI 5082-2711 is a Silicon Small Signal Schottky Diode for use in broad band and narow band microstrip, coaxial, or wavegide mixer assemblies operating up to 18 GHz. Color Dot indicates
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5082-2713
Abstract: No abstract text available
Text: 5082-2713 MEDIUM BARRIER SCHOTTKY DIODE PACKAGE STYLE 19 DESCRIPTION: The ASI 5082-2713 is a Silicon Small Signal Schottky Diode for use in broad band and narow band microstrip, coaxial, or wavegide mixer assemblies operating up to 18 GHz. Color Dot indicates
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20 GHz PIN diode
Abstract: 5082-3141 Hp 5082 10 GHz pin diode
Text: 5082-3141 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: The ASI 5082-3141 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3141
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ASI30214
20 GHz PIN diode
5082-3141
Hp 5082
10 GHz pin diode
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10 GHz pin diode
Abstract: pin diode microstrip Direct Replacement ASI30217 ghz Diode DB20A
Text: 5082-3170 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: The ASI 5082-3170 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3170
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ASI30217
10 GHz pin diode
pin diode microstrip
Direct Replacement
ASI30217
ghz Diode
DB20A
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Untitled
Abstract: No abstract text available
Text: 62038 GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 08/18/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package End-of-tape indicators Reflective sensors Card readers
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940nm
MIL-PRF-19500.
100mA
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Untitled
Abstract: No abstract text available
Text: 5082-3040 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The ASI 5082-3040 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3040
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ASI30415
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Untitled
Abstract: No abstract text available
Text: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 2 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
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OD962
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PESD5V0S1BSF
Abstract: No abstract text available
Text: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 2 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
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OD962
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Untitled
Abstract: No abstract text available
Text: PESD5V0L1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
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10 gb laser diode
Abstract: 10 gb laser diode 1310 nm NO81 UNCOOLED MQW-FP LD
Text: 10Gbps 1310 nm MQW-FP Laser Diode Module-TOSA C-13-010-TX-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for
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10Gbps
C-13-010-TX-SXXXX
LUMNDS530-APR2505
10 gb laser diode
10 gb laser diode 1310 nm
NO81
UNCOOLED MQW-FP LD
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2CW4
Abstract: UNCOOLED MQW-FP LD
Text: 10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA C-13-010-PK-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for
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10Gbps
C-13-010-PK-SXXXX
LUMNDS806-APR2505
2CW4
UNCOOLED MQW-FP LD
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10 Gbps TOSA
Abstract: C-13-010-TX-SSC2
Text: 10 Gbps 1310 nm MQW FP Laser Diode Modules-TOSA PRELIMINARY C-13-010-TX-SSC2 Features • Uncooled FP laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode Packaging • Integrated 4-pin TO-18 TOSA package, with built-in isolator
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C-13-010-TX-SSC2
LUMNDS191-0502
10 Gbps TOSA
C-13-010-TX-SSC2
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laser diode 2.5mw
Abstract: 1310nm laser diode for 10Gbps laser diode 1310 nm fiber coupled 10 gb laser diode UNCOOLED MQW-FP LD
Text: 10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA C-13-010-PK-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for
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10Gbps
C-13-010-PK-SXXXX
LUMNDS806-FEB2006
laser diode 2.5mw
1310nm laser diode for 10Gbps
laser diode 1310 nm fiber coupled
10 gb laser diode
UNCOOLED MQW-FP LD
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J-STD-20C
Abstract: METELICS DETECTOR DIODE J-STD-20-C A 0503 SMS-202
Text: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and
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SMS202
SMS202
A17105
J-STD-20C
METELICS DETECTOR DIODE
J-STD-20-C
A 0503
SMS-202
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Untitled
Abstract: No abstract text available
Text: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and
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SMS202
A17105
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Untitled
Abstract: No abstract text available
Text: • • • • Center wavelength 1550nm • • • Four-lead package 1550nm FP Laser Diode SM Module Features Low threshold current High speed tr/tf < 0.7ns Built-in InGaAs monitor detector o o Wide operating temperature -40 C to 85 C Hermetically sealed TO-18 package in pigtailed or
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1550nm
1550nm
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IE-15KA
Abstract: No abstract text available
Text: Waitrony Infrared Emitting Diode Module No.: IE-15KA 1. General Description: Dimensions IE-15KA is a high output power GaAs infrared light emitting diode, mounted in a durable, hermetically sealed TO-18 metal can package, which provide years of reliable performance even under demanding
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IE-15KA
IE-15KA
940nm.
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Untitled
Abstract: No abstract text available
Text: SE2460 GaAs Infrared Emitting Diode FEATURES . Miniature, hermetically sealed, pill style, metal can package • 18° nominal beam angle . Wide operating temperature range (-55°C to +125°C) . Ideal for direct mounting to printed circuit boards . 935 nm wavelength
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SE2460
SD2420
SD2440
SD2410
SE2460
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