Diode SE-05
Abstract: QAL-785-04-F-18-1 QAL-785-04-F-18-2 QAL-785-04-F-18-3 780nm laser diode
Text: QAL-785-04-F-18-1/2/3 : AIGaAs Laser Diode [ FEATURES ] [ OVERVIEW ] [ APPLICATION ] - Visible Light Output : λp = 780nm - Optical Power Output : 5mW CW - Package Type : TO-18 5.6mmQ^ - Built-in Photo Diode for Monitoring Laser Diode QAL-780-04-D-18-1/2/3 is a MOCVD grown 780nm band
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QAL-785-04-F-18-1/2/3
780nm
QAL-780-04-D-18-1/2/3
780nm
QAL-785-04-F-18-1/2/3
22MAX
66MAX
Diode SE-05
QAL-785-04-F-18-1
QAL-785-04-F-18-2
QAL-785-04-F-18-3
780nm laser diode
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Untitled
Abstract: No abstract text available
Text: AUK CORP. Infrared Emitting Diode KFL-1ML-N Description The KFL-1ML-N is high power, wide beam angle GaAlAs infrared emitting diode with TO-18 metal stem and clear epoxy lens. this device is relatively low-cost compared to TO-18 can type devices. Pin Connection
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850nm
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Untitled
Abstract: No abstract text available
Text: 1S1236 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleDO-14 Mounting StyleT DescriptionSwitching diode;bv-18 to 32V max;bi-.20mA max;Vo peak -4.5V min. at RL-20 ohms
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1S1236
StyleDO-14
bv-18
RL-20
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Untitled
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version.
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10MHz
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650nm 5mw laser
Abstract: samsung laser diode 650nm 5mw laser diode Laser-Diode sd650-5 650nm "red laser diode" LIGHT LASER DIODE SAMSUNG SD650-5 laser diode TO-18 package RED laser diode operating Temperature
Text: Samsung Laser Diode SD650nm5mw SD650-5 DATA SHEETS . 650nm 5mW .RED LASER DIODE RED LASER DIODE ABSOLUTE MAXIMUM RATINGS Tc=25 °C TECHNICAL DATA Visible light output 650nm Optical power output 5mW CW Package Type TO-18 Built-in photo diode for monitoring laser output
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SD650nm5mw
SD650-5
650nm
650nm
650nm 5mw laser
samsung laser diode
650nm 5mw laser diode
Laser-Diode sd650-5
"red laser diode"
LIGHT LASER DIODE SAMSUNG
SD650-5
laser diode TO-18 package
RED laser diode operating Temperature
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Photo DIODE (any type) datasheet
Abstract: red diode laser 670NM Laser-Diode LIGHT LASER DIODE SAMSUNG SD670-5 red laser diode DEG22
Text: Samsung Laser Diode - SD670nm5mw SD670-5 DATA SHEETS . SD670nm 5mW .RED LASER DIODE RED DIODE LASER ABSOLUTE MAXIMUM RATINGS Tc=25 °C TECHNICAL DATA Visible light output 670nm Optical power output 5mW CW Package Type TO-18 Built-in photo diode for monitoring laser output
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SD670nm5mw
SD670-5
SD670nm
670nm
Photo DIODE (any type) datasheet
red diode laser
670NM Laser-Diode
LIGHT LASER DIODE SAMSUNG
SD670-5
red laser diode
DEG22
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808nm laser diode
Abstract: diode laser 808nm 200mW laser diode 808nm 808nm TO18 Laser 808nm 300 mw Laser Diode 250mW P200 300 mw IR Laser Diode laser diode 200mw 808nm 300 mw laser diode
Text: SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-01 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbol Parameter
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SLD-808-P200-01
808nm
250mW
125mW
808nm laser diode
diode laser 808nm 200mW
laser diode 808nm
TO18 Laser 808nm 300 mw
Laser Diode 250mW
P200
300 mw IR Laser Diode
laser diode 200mw
808nm 300 mw laser diode
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laser diode 635nm
Abstract: laser diode 635 nm SLD-635-P10-01
Text: SLD-635-P10-01 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P10-01 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbols Parameter
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SLD-635-P10-01
635nm
laser diode 635nm
laser diode 635 nm
SLD-635-P10-01
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SLD-635-P5-02
Abstract: No abstract text available
Text: SLD-635-P5-02 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P5-02 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbols Parameter Po
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SLD-635-P5-02
635nm
SLD-635-P5-02
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808nm laser diode
Abstract: laser diode 808nm diode laser 808nm 200mW laser diode 200mw TO18 Laser 808nm 300 mw ir laser 808nm laser 808nm P200 CORP400
Text: SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-02 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) ■Absolute Maximum Ratings(Tc=25℃) Symbol Parameter Po Optical Output
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SLD-808-P200-02
808nm
250mW
125mW
808nm laser diode
laser diode 808nm
diode laser 808nm 200mW
laser diode 200mw
TO18 Laser 808nm 300 mw
ir laser
808nm laser
P200
CORP400
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MA4SW100
Abstract: 9620* diode MA4SW100-300
Text: Monolithic PIN Diode Switches MA4SW100, 200, 300 V3.00 Features ● ● ● ● Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz Single Chip Replaces up to
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MA4SW100,
MA4SW100-300
MA4SW200
MA4SW300
MA4SW100
9620* diode
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405nm Laser Diode
Abstract: 405nm laser laser diode 405nm 405nm 100MW
Text: 405nm Laser Diode Outline Dimension Features Output Power: 100mW CW TO-18 Package Efficient Quantum Well Structure Standard TO-18 Package Absolute Maximum Ratings Item (Tc=25℃) Symbol Absolute Maximum Unit Ratings Optical Output Power Po 100 mW LD Reverse Voltage
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405nm
100mW
405nm Laser Diode
405nm laser
laser diode 405nm
100MW
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405nm laser
Abstract: 405nm Laser 5 mw 405nm Laser Diode 405nm 140mW
Text: 405nm Laser Diode Outline Dimension Features Output Power: 140mW CW TO-18 Package Efficient Quantum Well Structure Standard TO-18 Package Absolute Maximum Ratings Item (Tc=25℃) Symbol Absolute Maximum Unit Ratings Optical Output Power Po 140 mW LD Reverse Voltage
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405nm
140mW
405nm laser
405nm Laser 5 mw
405nm Laser Diode
140mW
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405nm 20mW
Abstract: 405nm laser 405nm laser diode TO18 package 405nm
Text: 405nm Laser Diode Outline Dimension Features Output Power: 20mW CW TO-18 Package Efficient Quantum Well Structure Standard TO-18 Package Absolute Maximum Ratings Item (Tc=25℃) Symbol Absolute Maximum Unit Ratings Optical Output Power Po 20 mW LD Reverse Voltage
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405nm
405nm 20mW
405nm laser
405nm laser diode
TO18 package
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VCSEL lens
Abstract: VCSEL 980nm 650nm 10mw 980nm VCSEL
Text: High Power TO-18 VCSEL for KVHZ-1885BDAN KVHZ-1885BDAN Description The KVHZ-1885BDAN consist of a high power VCSEL and zener diode in TO-18 package. The VCSEL has a high output power, low operating current and provides high optical performance. It emits parallel infrared lights.
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KVHZ-1885BDAN
KVHZ-1885BDAN
650nm
780nm
850nm
980nm
1310nm
1550nm
VCSEL lens
VCSEL 980nm
650nm 10mw
980nm VCSEL
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"back diode"
Abstract: back Tunnel diode back diode tunnel diode specifications tunnel diodes Tunnel Diode
Text: ASTD1020 PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD1020 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times
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ASTD1020
ASTD1020
ASTD1020-XX
"back diode"
back Tunnel diode
back diode
tunnel diode specifications
tunnel diodes
Tunnel Diode
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18-BIT
SDFS094
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patents integrated SRAMS in 1993
Abstract: S1 DIODE schottky SN74F1018 DIODE A16 DIODE a5 A7 diode schottky
Text: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18-BIT
SDFS094
patents integrated SRAMS in 1993
S1 DIODE schottky
SN74F1018
DIODE A16
DIODE a5
A7 diode schottky
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18BIT
SDFS094
18-Bit
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SN74F1018
Abstract: No abstract text available
Text: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for
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SN74F1018
18BIT
SDFS094
18-Bit
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TSTA7100
Abstract: No abstract text available
Text: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant
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TSTA7100
TSTA7100
D-74025
15-Jul-96
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tsta7500
Abstract: No abstract text available
Text: Temic TSTA7500 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO -18 package. Its flat glass window makes it ideal for
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TSTA7500
TSTA7500
D-74025
15-Jul-96
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TSTA7300
Abstract: No abstract text available
Text: Temic TSTA7300 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant in
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TSTA7300
TSTA7300
D-74025
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: m an A M P com pany Monolithic PIN Diode Switches MA4SW100,200,300 V3.00 Features • Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) • Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz • Single Chip Replaces up to
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MA4SW100
MA4SW100-300
MA4SW100,
MA4SW200
MA4SW300
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